BTS3134N_08

Smart Low Side Power Switch HITFET BTS 3134N Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown • Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) I D(Nom) EAS 42 50 3 500 V A m mJ 4 3 2 1 VPS05163 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description technology. Fully protected by embedded Vbb HITFET Current Limitation In Pin 1 OvervoltageProtection Gate-Driving Unit Overtemperature Protection ESD Overload Protection Short circuit Protection Pin 3 Source Datasheet 1  N channel vertical power FET in Smart SIPMOS protection functions. M Drain Pin 2 and 4 (TAB) Rev. 1.3, 2008-04-14
   Smart Low Side Power Switch HITFET BTS 3134N Maximum Ratings at T j = 25°C, unless otherwise specified Parameter Symbol Drain source voltage Drain source voltage for short circuit protection T j = -40...150°C Continuous input current VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation T C = 85 °C Unclamped single pulse inductive energy 1) Load dump protection VLoadDump2) = V A + VS VIN = 0 and 10 V, t d = 400 ms, RI = 2 , EAS VLD IIN VDS VDS(SC) Value 42 30 Unit V mA no limit | IIN | 2 °C W mJ V Tj Tstg Ptot -40 ...+150 -55 ... +150 3.8 500 53.5 Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Thermal resistance junction - ambient: @ min. footprint @ 6 cm2 cooling area 3) junction-soldering point: RthJS RthJA 125 72 17 K/W K/W 1 Not tested, specified by design. 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. Datasheet
R L = 4.5 , VA = 13.5 V 2 2 
  -0.2V VIN 10V kV Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C VDS = 32 V, VIN = 0 V Input threshold voltage ID = 1.4 mA, Tj = 25 °C ID = 1.4 mA, Tj = 150 °C On state input current On-state resistance VIN = 5 V, ID = 3 A, Tj = 25 °C VIN = 5 V, ID = 3 A, Tj = 150 °C On-state resistance VIN = 10 V, ID = 3 A, Tj = 25 °C VIN = 10 V, ID = 3 A, Tj = 150 °C Nominal load current VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C Current limit (active if VDS>2.5 V)1) VIN = 10 V, VDS = 12 V, tm = 200 µs ID(Nom) 3 ID(lim) 18 24 30 RDS(on) 35 65 50 90 A IIN(on) RDS(on) 45 75 60 100 VIN(th) 1.3 0.8 1.7 10 2.2 30 µA V IDSS 1.5 10 µA VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condit and a short circuit occurs, these values might be exceeded for max. 50 µs. Datasheet 3 Rev. 1.3, 2008-04-14
m Smart Low Side Power Switch HITFET BTS 3134N Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Dynamic Characteristics VIN to 90% I D: R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: Turn-on time 70 to 50% Vbb: R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: Slew rate on t on t off -dV DS/dt on dV DS/dt off 60 60 0.3 0.7 100 100 1.5 1.5 V/µs µs Symbol min. Values typ. max. Unit Protection Functions1) Thermal overload trip temperature Input current protection mode Input current protection mode Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 3 A, Tj = 25 °C, Vbb = 12 V EAS 500 mJ Tjt IIN(Prot) IIN(Prot) 150 80 175 160 130 300 300 °C µA Inverse Diode Inverse diode forward voltage IF = 15 A, tm = 250 µs, VIN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Datasheet
R L = 4.7

R L = 4.7
, VIN = 10 to 0 V, Vbb = 12 V , VIN = 10 to 0 V, Vbb = 12 V VSD - 1 - V 4 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N Block diagram Terms Inductive and overvoltage output clamp RL V I IN 1 IN HITFET S VIN 3 2 D ID VDS Vbb Z D S HITFET Input circuit (ESD protection) V Gate Drive Input Short circuit behaviour IN I IN t Source/ Ground I D t T t j t Datasheet 5 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N 1 Maximum allowable power dissipation Ptot = f(TS) resp. Ptot = f(TA) @ R thJA=72 K/W 10 W 2 On-state resistance R ON = f(T j); ID=3A; V IN=10V 100 8 7 RDS(on) max. Ptot 6 5 4 3 2 6cm2 1 0 -75 -50 -25 0 25 50 75 100 °C 150 TS ;TA 3 On-state resistance R ON = f(Tj ); ID= 3A; VIN=5V 110 4 Typ. input threshold voltage VIN(th) = f(T j); ID = 0.7 mA; V DS = 12V 2 max. V RDS(on) VGS(th) Datasheet
m 90 80 70 60 typ. 50 0.8 40 30 20 10 0 -50 -25 0 25 50 75 100 125 °C 175 0.6 0.4 0.2 0 -50 Tj 6
80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 °C 1.6 1.4 1.2 1 -25 0 25 50 75 100 °C m max. typ. 175 Tj 150 Tj Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N 5 Typ. transfer characteristics ID =f(VIN ); VDS=12V; TJstart=25°C 30 6 Typ. short circuit current I D(lim) = f(Tj); VDS=12V Parameter: V IN 30 A A 20 20 ID ID Vin=10V 15 15 5V 10 10 5 5 0 0 1 2 3 4 5 6 7 8 V 10 0 -50 -25 0 25 50 75 100 125 °C 175 VIN Tj 7 Typ. output characteristics ID =f(VDS ); TJstart =25°C Parameter: V IN 35 A 10V 8 Typ. off-state drain current IDSS = f(Tj ) 11 µA max. 9 7V 25 6V 8 I DSS ID 7 6 5 4 20 4V 5V 15 10 Vin=3V 3 2 1 typ. 5 0 0 1 2 3 4 V 6 0 -50 -25 0 25 50 75 100 125 °C 175 VDS Tj Datasheet 7 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N 9 Typ. overload current ID(lim) = f(t), Vbb =12 V, no heatsink Parameter: Tjstart 40 10 Typ. transient thermal impedance Z thJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 K/W 2 A 10 30 -40°C 1 D=0.5 0.2 0.1 I D(lim) ZthJA 0.05 25 10 0 0.02 0.01 20 10 -1 15 85°C 25°C 10 150°C 10 5 -2 Single pulse -3 0 0 0.5 1 1.5 2 2.5 3 ms t 4 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 3 tp 11 Determination of ID(lim) ID(lim) = f(t); tm = 200µs Parameter: TJstart 40 A 30 I D(lim) -40°C 25 25°C 20 85°C 15 150°C 10 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Datasheet 8 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N Package Outlines 1 Package Outlines A 6.5 ±0.2 3 ±0.1 4 1.6±0.1 0.1 MAX. 15˚ MAX. B 1 2 3 0.7 ±0.1 4.6 0.25 M A 2.3 0.5 MIN. 0.28 ±0.04 0...10˚ 0.25 M B GPS05560 Figure 1 PG-SOT223-4 (Plastic Green Small Outline Transistor Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.3, 2008-04-14 3.5 ±0.2 7 ±0.3 Smart Low Side Power Switch HITFET BTS 3134N Revision History 2 Version Rev. 1.3 Rev. 1.2 Revision History Date 2008-04-14 2007-03-28 Changes Package information updated to SOT223-4 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added released production version Rev. 1.1 2004-02-02 Datasheet 10 Rev. 1.3, 2008-04-14 Edition 2008-04-14 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.