BTS3142D

Smart Low Side Power Switch Power HITFET BTS 3142D Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown • Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS R DS(on) ID(Nom) EAS 42 28 4.6 3.5 V mΩ A J P / PG-TO252-3-11 Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  technology. Fully protected by embedded protection functions. Vbb M HITFET  Current Limitation In Pin 1 Drain Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Datasheet 1 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3142D Maximum Ratings at T j = 25°C, unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Tj = -40...150°C Continuous input current -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation IIN no limit | IIN | ≤ 2 mA Symbol Value 42 28 Unit V VDS VDS(SC) Tj Tstg Ptot -40 ...+150 -55 ... +150 °C W TC = 85 °C 6cm2 cooling area , TA = 85 °C Unclamped single pulse inductive energy 1) Load dump protection VLoadDump2) = VA + VS VIN = 0 and 10 V, td = 400 ms, R I = 2 Ω, R L = 3 Ω, VA = 13.5 V Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 VESD E AS VLD 59 1.1 3.5 67.5 J V 2 kV Thermal resistance junction - case: SMD: junction - ambient @ min. footprint @ 6 cm2 cooling area 3) R thJC R thJA 1.1 115 55 K/W 1 Not tested, specified by design. 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3142D Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, I D = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS VIN(th) 1.3 0.8 IIN(on) R DS(on) R DS(on) ID(Nom) 4.6 ID(ISO) ID(lim) 12.6 30 45 55 23 46 28 56 A 27 54 34 68 1.7 10 2.2 30 µA mΩ 1.5 20 µA V VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit VDS = 32 V, VIN = 0 V Input threshold voltage ID = 1.2 mA, Tj = 25 °C ID = 1.2 mA, Tj = 150 °C On state input current On-state resistance VIN = 5 V, ID = 4.6 A, T j = 25 °C VIN = 5 V, ID = 4.6 A, T j = 150 °C On-state resistance VIN = 10 V, I D = 4.6 A, Tj = 25 °C VIN = 10 V, I D = 4.6 A, Tj = 150 °C Nominal load current Tj < 150°C, VIN = 10 V, TA = 85 °C, SMD 1) Nominal load current VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, tm = 200 µs 1@ 6 cm2 cooling area 2Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs. Datasheet 3 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3142D Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Symbol min. Values typ. max. Unit Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew rate off VIN to 90% I D: VIN to 10% I D: 70 to 50% Vbb: 50 to 70% Vbb: ton toff -dV DS/dton dV DS/dtoff 60 60 0.3 0.3 120 120 1.5 1.5 µs R L = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V R L = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V V/µs R L = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V R L = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Input current protection mode Input current protection mode T jt IIN(Prot) IIN(Prot) EAS 150 3.5 175 220 180 400 400 J °C µA Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 4.6 A, T j = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage VSD 1.0 V IF = 51 A, t m = 250 µs, V IN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Datasheet 4 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3142D Block diagram Terms Inductive and overvoltage output clamp RL V I IN 1 IN HITFET S VIN 3 2 D ID VDS Vbb Z D S HITFET Input circuit (ESD protection) V Gate Drive Input Short circuit behaviour IN I IN t Source/ Ground I D t T t j t Datasheet 5 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3142D 1 Maximum allowable power dissipation Ptot = f(T C) resp. Ptot = f(T A) @ R thJA=55 K/W 5 W 2 On-state resistance R ON = f(T j); ID=12.6A; V IN=10V 60 max. 4 3.5 Rthjc = 1.1 K/W mΩ R DS(on) Ptot 40 typ. 3 2.5 2 SMD @ 6cm2 30 1.5 1 20 10 0.5 0 -50 0 -50 -25 0 25 50 75 100 °C 150 -25 0 25 50 75 100 125 °C 175 TA;TC Tj 3 On-state resistance R ON = f(T j); ID= 12.6A; V IN=5V 80 4 Typ. input threshold voltage VIN(th) = f(T j); I D = 1.2 mA; V DS = 12V 2 V mΩ 60 max. 1.6 R DS(on) VGS(th) 1.4 1.2 1 0.8 0.6 50 typ. 40 30 20 0.4 10 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 °C 175 -25 0 25 50 75 100 °C 150 Tj Tj Datasheet 6 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3142D 5 Typ. transfer characteristics ID=f(V IN); V DS=12V; TJstart =25°C 50 A 6 Typ. short circuit current ID(lim) = f(T j); VDS=12V Parameter: V IN 60 A 40 35 50 45 40 ID 30 25 20 15 ID 35 30 25 20 15 Vin=10V 5V 10 10 5 0 1 2 3 4 5 6 7 8 5 V 10 0 -50 -25 0 25 50 75 100 125 °C 175 VIN Tj 7 Typ. output characteristics ID=f(V DS); TJstart=25°C Parameter: V IN 60 A 8 Typ. off-state drain current I DSS = f(T j) 25 µA 10V 50 45 40 20 7V 6V max. ID 5V I DSS 17.5 15 12.5 10 7.5 35 30 25 20 15 Vin=3V 4V 10 5 0 0 1 2 3 4 V 5 typ. 2.5 0 -50 6 -25 0 25 50 75 100 125 °C 175 VDS Tj Datasheet 7 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3142D 9 Typ. overload current I D(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 70 10 Typ. transient thermal impedance Z thJA=f(t p) @ 6 cm2 cooling area Parameter: D =tp/T 10 K/W 2 A -40°C D=0.5 10 1 0.2 0.1 I D(lim) 50 Z thJA 25°C 0.05 40 85°C 10 0 0.02 0.01 30 10 150°C -1 20 10 10 -2 Single pulse 0 0 0.5 1 1.5 2 2.5 3 3.5 4 10 -3 ms t 5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 3 tp 11 Determination of ID(lim) I D(lim) = f(t); tm = 200µs Parameter: TJstart 70 A -40°C I D(lim) 50 25°C 40 85°C 30 150°C 20 10 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Datasheet 8 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3142D Package Outlines 1 Package Outlines 6.5 +0.15 -0.05 5.4 ±0.1 (4.24) 1 ±0.1 A B 0.9 +0.20 -0.01 0...0.15 0.51 MIN. 2.3 +0.05 -0.10 0.5 +0.08 -0.04 (5) 9.98 ±0.5 6.22 -0.2 0.15 MAX. per side 0.8 ±0.15 3x 0.75 ±0.1 2.28 0.5 +0.08 -0.04 0.1 B 4.57 0.25 M AB All metal surfaces tin plated, except area of cut. GPT09277 Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3142D Revision History 2 Version Rev. 1.3 Rev. 1.2 Revision History Date 2006-12-22 2006-12-11 Changes released automotive green and robust version (BTS) Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added released non automotive green version (ITS) released production version Rev. 1.1 Rev. 1.0 2006-08-08 2004-03-05 Datasheet 10 Rev. 1.3, 2006-12-22 Edition 2006-12-22 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.