BTS410F2

PROFET® BTS 410 F2 Smart Highside Power Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 mΩ 1.8 A 2.7 A TO-220AB/5 5 5 1 Straight leads 1 5 Standard SMD • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for inductive loads • Replaces electromechanical relays, fuses and discrete circuits Application General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb Voltage source V Logic Voltage sensor 3 Overvoltage protection Current limit Gate protection OUT Charge pump Level shifter Rectifier Limit for unclamped ind. loads Open load 2 IN Temperature sensor 5 ESD Logic Load detection Short circuit detection GND 4 ST  PROFET Load GND 1 Signal GND 1 ) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load. Semiconductor Group 1 of 15 2003-Oct-01 BTS 410 F2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 1.8 A, ZL = 2.3 H, 0 Ω: Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Symbol Vbb VLoad dump4) IL Tj Tstg Ptot EAS VESD VIN IIN IST Values 65 100 self-limited -40 ...+150 -55 ...+150 50 4.5 1 2 -0.5 ... +6 ±5.0 ±5.0 Unit V V A °C W J kV V mA Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---Values typ max -2.5 -75 35 -Unit K/W chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): 2 ) 3) 4) 5 ) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 2003-Oct-01 BTS 410 F2 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.6 A Tj=25 °C: RON -190 390 IL(ISO) IL(GNDhigh) 1.6 -1.8 -220 440 -1 A mA µs mΩ Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150°C Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Operating Parameters Operating voltage 6) Undervoltage shutdown ton toff dV /dton -dV/dtoff 12 5 --- ----- 125 85 3 6 V/µs V/µs Tj =-40...+150°C: Tj =25°C: Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 13 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 7) Overvoltage protection Tj =-40...+150°C: Ibb=4 mA Standby current (pin 3) Tj=-40...+25°C: VIN=0 Tj= 150°C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150°C Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) ∆Vbb(under) Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND 4.7 2.9 2.7 ---42 40 -65 ----- ----5.6 0.1 --0.1 70 10 18 -1 42 4.5 4.7 4.9 6.0 -52 ---15 25 20 2.1 V V V V V V V V V µA µA mA 6 ) ) 7) 8 At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 2003-Oct-01 BTS 410 F2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions9) Initial peak short circuit current limit (pin 3 to 5)10), IL(SCp) ( max 450 µs if VON > VON(SC) ) Tj =-40°C: Tj =25°C: Tj =+150°C: Overload shutdown current limit IL(SCr) VON= 8 V, Tj = Tjt (see timing diagrams, page 11) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) min value valid only, if input "low" time exceeds 60 µs 4.0 3.5 2.0 --- -5.5 3.5 2.7 -- 11 10 7.5 -450 A A µs V V °C K V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: IL= 1 A, Tj =-40..+150°C: Short circuit shutdown detection voltage(pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 11) Diagnostic Characteristics Open load detection current (on-condition) VON(CL) VON(SC) Tjt ∆Tjt -Vbb 61 --150 --- 68 -8.5 -10 -- 73 75 ---32 IL (OL) Tj=-40 ..150°C: 2 -150 mA 9 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Short circuit current limit for max. duration of td(SC) max=450 µs, prior to shutdown 11) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). ) Semiconductor Group 4 2003-Oct-01 BTS 410 F2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback12) Input turn-on threshold voltage Tj =-40..+150 VIN(T+) Input turn-off threshold voltage Tj =-40..+150° VIN(T-) Input threshold hysteresis ∆ VIN(T) Off state input current (pin 2), VIN = 0.4 V IIN(off) On state input current (pin 2), VIN = 5 V IIN(on) td(ST SC) Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope td(ST) (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +50 uA: VST(high) ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low) 1.5 1.0 -1 10 -300 --0.5 -25 --- 2.4 --30 70 450 1400 V V V µA µA µs µs 5.0 -- 6 -- -0.4 V 12) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 2003-Oct-01 BTS 410 F2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 13 Status 412 B2 H H L H H L L H L L L15) L15) L L 410 D2 H H H L H L H 14 H (L )) L L 15 L) 15) L L L 410 E2/F2 H H H L H L H H (L14)) L L H H H H 410 G2 H H H L H H H H (L14)) L L H H H H 410 H2 H H L H H L L H L L H H H H ) H L L H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13) Terms Ibb I IN 2 I ST V V bb IN V ST 4 ST GND 1 R GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON Input circuit (ESD protection) R IN I ESDZDI1 ZDI2 GND I I ZDI1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). ) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 14) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 15) No current sink capability during undervoltage shutdown 13 Semiconductor Group 6 2003-Oct-01 BTS 410 F2 Overvolt. and reverse batt. protection Status output +5V R IN IN V Z2 + V bb R ST(ON) ST R ST ST V Logic GND ESDZD Z1 PROFET GND ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). R GND Signal GND VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 Ω, RIN, RST= 15 kΩ Short circuit detection Fault Condition: VON > 8.5 V typ.; IN high + V bb Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb V ON ON VON OUT Logic unit Short circuit detection OUT Logic unit Open load detection Inductive and overvoltage output clamp + V bb V GND disconnect Z VON 3 IN Vbb PROFET 4 ST GND 1 V GND OUT OUT GND 2 PROFET 5 VON clamped to 68 V typ. V bb V IN V ST Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Semiconductor Group 7 2003-Oct-01 BTS 410 F2 GND disconnect with GND pull up 3 IN Vbb PROFET 4 ST GND 1 V V bb V IN ST V OUT Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL ELoad 2 5 IN = ST GND GND ZL { L RL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT Energy stored in load inductance: EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, 2 5 with an approximate solution for RL > 0 Ω: EAS= IL· L IL·RL ·(V + |VOUT(CL)|)· ln (1+ ) |VOUT(CL)| 2·RL bb bb Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 Ω L [mH] 10000 Normal load current can be handled by the PROFET itself. Vbb disconnect with charged external inductive load S high 2 IN 3 Vbb PROFET 4 ST GND 1 V OUT 5 D 1000 bb If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 100 1.5 1.75 2 2.25 2.5 2.75 3 IL [A] Semiconductor Group 8 2003-Oct-01 BTS 410 F2 Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 10 1 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Semiconductor Group 9 2003-Oct-01 BTS 410 F2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 Ω in GND connection, protection against loss of ground Type Logic version BTS 412 B2 410D2 410E2 410F2 410G2 410H2 B D E F G H 307 308 Overtemperature protection with hysteresis Tj >150 °C, latch function16)17) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection switches off when VON>3.5 V typ. and Vbb> 7 V typ16) (when first turned on after approx. 150 µs) switches off when VON>8.5 V typ.16) (when first turned on after approx. 150 µs) Achieved through overtemperature protection X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X -19) X X X X X X X X X X X X X X 19) X Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor X X X X X X -19) X X X X X -19) X X X X X X X X X X X X X X X X X X X X X Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart ) 18 Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage X - Status output type CMOS Open drain X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X X X X X X X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) Protection against loss of GND 16 ) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 17) With latch function. Reseted by a) Input low, b) Undervoltage 18) No auto restart after overvoltage in case of short circuit 19) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection Semiconductor Group 10 2003-Oct-01 BTS 410 F2 Timing diagrams Figure 1a: Vbb turn on: IN Figure 3a: Turn on into short circuit, IN t V bb ST d(bb IN) VOUT V td(SC) OUT A ST open drain I L t t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs td(SC) approx. -- µs if Vbb - VOUT > 8.5 V typ. Figure 3b: Turn on into overload, Figure 2a: Switching an inductive load IN IN t ST *) IL d(ST) I L(SCp) I L(SCr) V OUT ST IL I L(OL) t Heating up may require several seconds, Vbb - VOUT < 8.5 V typ. *) if the time constant of load is too large, open-load-status may occur t Semiconductor Group 11 2003-Oct-01 BTS 410 F2 Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, turn on/off to open load IN IN ST ST t d(ST) V V OUT OUT I IL **) t **) current peak approx. 20 µs L open t Figure 4a: Overtemperature, Reset if (IN=low) and (Tj