BTS43212E3122A

PROFET® BTS 432 I2 Smart Highside Power Switch Features • • • • • • • • • • • • Product Summary Clamp 80 58 4.5 ... 42 -32 38 42 33 11 V V V V mΩ A A A Load dump and reverse battery protection1) VLoad dump Clamp of negative voltage at output Vbb-VOUT Avalanche Short-circuit protection Vbb (operation) Current limitation Vbb (reverse) Thermal shutdown RON Diagnostic feedback Open load detection in OFF-state IL(SCp) CMOS compatible input IL(SCr) Electrostatic discharge (ESD) protection IL(ISO) Loss of ground and loss of Vbb protection2) Overvoltage protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis 5 1 5 Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits SMD Standard General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. R bb + Vbb 3 Voltage source V Logic Voltage sensor Overvoltage protection Current limit Gate protection OUT Charge pump Level shifter Rectifier Limit for unclamped ind. loads Open load 2 IN Temperature sensor 5 Load ESD Logic detection 4 ST Short circuit detection GND ® PROFET Load GND 1 Signal GND 1) 2) No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Infineon Technologies AG Page 1 of 15 1999-02-19 BTS 432 I2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at T j = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω , RL= 1.1 Ω , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb Vs 3) IL Tj Tstg Ptot EAS VESD VIN IIN IST Values 63 66.5 self-limited -40 ...+150 -55 ...+150 125 1.7 2.0 -0.5 ... +6 ±5.0 ±5.0 ≤1 ≤ 75 ≤ tbd Unit V V A °C W J kV V mA Thermal resistance chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on pcb4): K/W 3) 4) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG Page 2 1999-02-19 BTS 432 I2 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: RON Tj=150 °C: Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, V IN = 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω , Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω , Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω , Tj =-40...+150°C Operating Parameters Operating voltage 5) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: Overvoltage protection6) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) VIN =0, IST=0, Tj=-40...+25°C : Tj=150°C: Operating current (Pin 1)7), VIN =5 V 5) 6) 7) -9 -- 30 55 11 -- 38 70 -1 mΩ A mA µs IL(ISO) IL(GNDhigh) ton toff dV /dton -dV/dtoff 50 10 0.4 1 160 ---- 300 80 2.5 5 V/µs V/µs Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) ∆Vbb(under) Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) Ibb(off) 4.5 2.4 ---42 42 -60 63 --- ---6.5 0.2 --0.2 -67 40 50 1.1 42 4.5 4.5 7.5 -52 ---- V V V V V V V V V µA 70 110 -mA IGND -- At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST , if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG Page 3 1999-02-19 BTS 432 I2 Protection Functions Initial peak short circuit current limit (pin 3 to 5)8), IL(SCp) ( max 400 µs if V ON > V ON(SC) ) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) min value valid only, if input "low" time exceeds 30 µs --22 20 80 -42 -33 -- 72 ---400 A A µs V V °C K J Output clamp (inductive load switch off) at V OUT = V bb - V ON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 10) Integrated resistor in V bb line Diagnostic Characteristics Open load detection current Open load detection voltage Tj=-40..150°C: VON(CL) VON(SC) Tjt ∆Tjt EAS ELoad12 ELoad24 -Vbb Rbb --150 --- 58 8.3 -10 -- ----1.7 1.3 1.0 32 -- --- -120 V Ω IL(off) VOUT(OL) 10 2 30 3 60 4 µA V ) 9) Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL (t) dt, approx. VON(CL) 2 EAS= 1/2 * L * IL * ( ), see diagram page 8 VON(CL) - Vbb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Infineon Technologies AG Page 4 1999-02-19 BTS 432 I2 Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Input threshold hysteresis Off state input current (pin 2) On state input current (pin 2) Delay time for status with open load after Input neg. slope (see diagram page 12) VIN(T+) VIN(T-) ∆ VIN(T) VIN = 0.4 V: IIN(off) VIN = 3.5 V: IIN(on) td(ST OL3) td(ST SC) 1.5 1.0 -1 10 40 80 --0.5 -25 -200 2.4 --30 50 300 400 V V V µA µA µs µs Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status output (CMOS) Tj =-40...+150°C, IST= - 50 µA: Tj =-40...+150°C, IST = +1.6 mA: Max. status current for current source (out): valid status output, current sink (in) : Tj =-40...+150°C VST(high)12) VST(low) -IST +IST13) 4.4 ---- 5.1 ---- 6.5 0.4 0.25 1.6 V mA 11) If a ground resistor R GND is used, add the voltage drop across this resistor. 12) V ≈ Vbb during undervoltage shutdown St high 13) No current sink capability during undervoltage shutdown Infineon Technologies AG Page 5 1999-02-19 BTS 432 I2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 14) Status 432 D2 H H H L H L H H (L15)) L L L16) L16) L L 432 E2/F2 H H H L H L H H (L15)) L L H H H H 432 I2 H H L H H L L H L L L16) L16) L L H L L H H L L L L L L Terms Ibb 3 I IN IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT PROFET OUT 5 Vbb IL VON Status output VLogic ST GND ESDZD Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ, ESD zener diodes are not designed for continuous current Short Circuit detection Input circuit (ESD protection) R IN I Fault Condition: VON > 8.3 V typ.; IN high + V bb ESDZDI1 ZDI2 GND I I Short circuit detection V ON OUT ZDI1 6.1 V typ., ESD zener diodes are not designed for continuous current Logic unit 14) Power Transistor off, high impedance 15) Low resistance short V to output may be detected by no-load-detection bb 16) No current sink capability during undervoltage shutdown Infineon Technologies AG Page 6 1999-02-19 BTS 432 I2 Inductive and overvoltage output clamp + V bb V Z V ON GND disconnect 3 IN 2 PROFET OUT 5 Vbb OUT GND 4 V bb V IN V ST ST GND 1 VGND VON clamped to 58 V typ. Overvolt. and reverse batt. protection + V bb Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. GND disconnect with GND pull up 3 R IN VZ IN R bb Logic V 2 OUT IN Vbb PROFET OUT R ST ST GND 5 PROFET 4 ST GND 1 RGND Signal GND Rbb = 120 Ω t yp., VZ + Rbb *40 mA = 67 V typ., add RGND, RIN , RST for extended protection V V bb V IN ST V GND Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with charged inductive load 3 high IN Vbb PROFET OUT OFF I L(OL) 2 5 4 ST GND 1 Logic unit Open load detection V OUT V Signal GND bb Infineon Technologies AG Page 7 1999-02-19 BTS 432 I2 3 high 2 IN Vbb PROFET 4 ST GND 1 OUT Inductive Load switch-off energy dissipation E bb E AS 5 IN V bb PROFET OUT E Load = V bb ST GND EL ER Energy dissipated in PROFET EAS = Ebb + EL - ER. 2 ELoad < EL, EL = 1/2 * L * I L Infineon Technologies AG Page 8 1999-02-19 BTS 432 I2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 432D2 432E2 432F2 432I2 D E F I Overtemperature protection Tj >150 °C, latch function17)18) Tj >150 °C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ. 17) (when first turned on after approx. 200 µs) X X X X X X X X Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor X X X X X X X X X X X X Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage X X -19) X X X X X -19) X - X X -19) X - X X X X X X Status output type CMOS Open drain X X X X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) X X X X 17) Latch except when V -V bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 19) Low resistance short V to output may be detected by no-load-detection bb Infineon Technologies AG Page 9 1999-02-19 BTS 432 I2 Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load IN IN t d(bb IN) V bb ST V OUT V A OUT ST CMOS t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs I L t Figure 3a: Turn on into short circuit, Figure 2a: Switching a lamp, IN IN ST ST V VOUT OUT td(SC) I I L L t td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ. t Infineon Technologies AG Page 10 1999-02-19 BTS 432 I2 Figure 3b: Turn on into overload, Figure 4a: Overtemperature, Reset if (IN=low) and (Tj< Tjt) IN IN IL I L(SCp) I L(SCr) ST V OUT ST t T J t Heating up may require several milliseconds , Vbb - VOUT < 8.3 V typ. *) ST goes high , when VIN=low and Tj