BTS432E2E3043

PROFET® BTS 432 E2 Smart Highside Power Switch • Load dump and reverse battery protection1) • Clamp of negative voltage at output • Short-circuit protection • Current limitation • Thermal shutdown • Diagnostic feedback • Open load detection in ON-state • CMOS compatible input • Electrostatic discharge (ESD) protection • Loss of ground and loss of Vbb protection2) • Overvoltage protection • Undervoltage and overvoltage shutdown with autorestart and hysteresis Features Product Summary 80 VLoad dump Vbb-VOUT Avalanche Clamp 58 Vbb (operation) 4.5 ... 42 Vbb (reverse) -32 RON 38 IL(SCp) 44 IL(SCr) 35 IL(ISO) 11 V V V V mΩ A A A 5 1 Straight leads 1 5 5 Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits SMD Standard General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. R bb + V bb Voltage source V Logic Voltage sensor 3 Overvoltage protection Current limit Gate protection OUT Charge pump Level shifter Rectifier Limit for unclamped ind. loads Open load 2 IN Temperature sensor 5 ESD Logic Load detection Short circuit detection GND 4 ST  PROFET Load GND 1 Signal GND 1) 2) No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Semiconductor Group 1 of 14 2003-Oct-01 BTS 432 E2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb Vs3) IL Tj Tstg Ptot EAS VESD VIN IIN IST Values 63 66.5 self-limited -40 ...+150 -55 ...+150 125 1.7 2.0 -0.5 ... +6 ±5.0 ±5.0 ≤1 ≤ 75 ≤ tbd Unit V V A °C W J kV V mA Thermal resistance chip - case: junction - ambient (free air): SMD version, device on pcb4): RthJC RthJA K/W 3) 4) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 2003-Oct-01 BTS 432 E2 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: RON Tj=150 °C: Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Operating Parameters Operating voltage 5) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 6) Overvoltage protection Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) Tj=-40...+25°C: VIN=0 Tj=150°C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)7), VIN=5 V 5) 6) 7) -9 -- 30 55 11 -- 38 70 -1 mΩ A mA µs IL(ISO) IL(GNDhigh) ton toff dV /dton -dV/dtoff 50 10 0.4 1 160 ---- 300 80 2.5 5 V/µs V/µs Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) ∆Vbb(under) Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND 4.5 2.4 ---42 42 -60 63 ----- ---6.5 0.2 --0.2 -67 12 18 6 1.1 42 4.5 4.5 7.5 -52 ---25 60 --- V V V V V V V V V µA µA mA At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 2003-Oct-01 BTS 432 E2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions8) Initial peak short circuit current limit (pin 3 to 5)9), IL(SCp) ( max 400 µs if VON > VON(SC) ) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope Tj =-40..+150°C: td(SC) VON > VON(SC), min value valid only, if input "low" time exceeds 30 µs --24 22 80 -44 -35 -- 74 ---400 A A µs V V °C K J Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation10), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 11) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition) VON(CL) VON(SC) Tjt ∆Tjt EAS ELoad12 ELoad24 -Vbb Rbb --150 --- 58 8.3 -10 -- ----1.7 1.3 1.0 32 -- --- -120 V Ω Tj=-40 °C: IL (OL) Tj=25..150°C: 2 2 --- 900 750 mA 8) 9) 10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. VON(CL) 2 ), see diagram page 8 EAS= 1/2 * L * IL * ( VON(CL) - Vbb 11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 2003-Oct-01 BTS 432 E2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback12) Input turn-on threshold voltage Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Input threshold hysteresis Off state input current (pin 2) On state input current (pin 2) VIN(T+) VIN(T-) ∆ VIN(T) VIN = 0.4 V: IIN(off) VIN = 3.5 V: IIN(on) td(ST SC) td(ST) 1.5 1.0 -1 10 80 350 --0.5 -25 200 -- 2.4 --30 50 400 1600 V V V µA µA µs µs Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) VST(low) 5.4 -- 6.1 -- -0.4 V 12) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 2003-Oct-01 BTS 432 E2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 13) Status 432 D2 H H H L H L H H (L14)) L L 15) L L15) L L 432 E2/F2 H H H L H L H H (L14)) L L H H H H 432 I2 H H L H H L L H L L 15) L L15) L L H L L H H L L L L L L Terms Ibb I IN 2 I ST V V bb IN VST 4 ST GND 1 R GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON Input circuit (ESD protection) R IN I ESDZDI1 ZDI2 GND I I ZDI1 6.1 V typ., ESD zener diodes are not designed for continuous current 13) 14) Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection 15) No current sink capability during undervoltage shutdown Semiconductor Group 6 2003-Oct-01 BTS 432 E2 Status output +5V V Z Overvolt. and reverse batt. protection + V bb R ST(ON) R bb ST R IN IN Logic GND ESDZD V R ST ST GND OUT PROFET ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not designed for continuous current R GND Signal GND Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high + V bb Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb V ON OUT Logic unit Short circuit detection ON VON OUT Inductive and overvoltage output clamp + V bb V Z V ON Logic unit Open load detection GND disconnect 3 IN Vbb PROFET 4 V bb V IN V ST ST GND 1 V GND OUT OUT GND VON clamped to 58 V typ. 2 5 Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Semiconductor Group 7 2003-Oct-01 BTS 432 E2 GND disconnect with GND pull up 3 IN Vbb PROFET 4 ST GND 1 V V bb V IN ST V OUT 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT 2 5 5 bb GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL ELoad Vbb disconnect with charged inductive load IN 3 high 2 IN Vbb PROFET 4 ST GND 1 OUT = 5 ST GND ER Energy dissipated in PROFET EAS = Ebb + EL - ER. V bb ELoad < EL, EL = 1/2 * L * I L 2 Semiconductor Group 8 2003-Oct-01 BTS 432 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 432D2 432E2 432F2 432I2 D X X X X X X E F X I X Overtemperature protection Tj >150 °C, latch function16)17) Tj >150 °C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.16) (when first turned on after approx. 200 µs) Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor X X X X X X -18) X X X X X X X X X X X -18) X X X X X X -18) X X X X X X X X X X Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) 16) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 17) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 18) Low resistance short V to output may be detected by no-load-detection bb Semiconductor Group 9 2003-Oct-01 BTS 432 E2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN V bb t d(bb IN) ST *) td(ST) V V OUT OUT A ST open drain t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs *) if the time constant of load is too large, open-load-status may occur I L IL(OL) t Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V V OUT OUT td(SC) I I L L t td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ. t Semiconductor Group 10 2003-Oct-01 BTS 432 E2 Figure 4a: Overtemperature: Reset if Tj