BTS436L2G

BTS436L2 Smart High-Side Power Switch One Channel: 38mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation RON Vbb(on) IL(NOM) IL(SCr) 38mΩ 4.75...41V 9.8A 40A Package TO 220-5-11 TO-263-5-2 TO-220-5-12 Standard SMD Straight General Description • • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and  diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions Applications • • • • µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions • • • • • • Very low standby current CMOS compatible input Fast demagnetization of inductive loads Stable behaviour at undervoltage W ide operating voltage range Logic ground independent from load ground Protection Functions • • • • • • • • Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD) Block Diagram Vbb IN ST Logic with protection functions OUT Load Diagnostic Function • • • Diagnostic feedback with open drain output Open load detection in ON-state Feedback of thermal shutdown in ON-state PROFET GND Semiconductor Group Page 1 of 12 2003-Oct-01 BTS436L2 Functional diagram overvoltage protection internal voltage supply logic gate control + charge pump current limit VBB clamp for inductive load OUT IN ESD ST GND temperature sensor Open load detection LOAD PROFET Pin Definitions and Functions Pin 1 2 3 4 5 Tab Symbol GND IN Vbb ST OUT Vbb Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage The tab is shorted to pin 3 Diagnostic feedback, low on failure Output to the load Positive power supply voltage The tab is shorted to pin 3 Pin configuration (top view) Tab = VBB 1 2 (3) 4 5 GND IN ST OUT Semiconductor Group Page 2 2003-Oct-01 BTS436L2 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2)= 2 Ω, RL= 4.0 Ω, td= 200 ms, IN= low or high Load current (Current limit, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. 4 (See diagram on page 8) IL(ISO) = 9.8 A, RL = 0 Ω, E )AS=0.33J: Symbol Vbb Vbb VLoad dump IL Tj Tstg Ptot ZL VESD 3 Values 43 24 60 self-limited -40 ...+150 -55 ...+150 75 5.0 1.0 4.0 8.0 -10 ... +16 ±2.0 ±5.0 Unit V V V A °C W mH kV Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 VIN IIN IST V mA Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): RthJA device on pcb5): min ---Values typ max -- 1.75 -75 33 -Unit K/W 1) 2) 3) 4) 5) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 EAS is the maximum inductive switch-off energy Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group Page 3 2003-Oct-01 BTS436L2 Electrical Characteristics Parameter and Conditions at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A; VBB ≥ 7V see diagram, page 9 Tj=25 °C: RON Tj=150 °C: IL(ISO) IL(GNDhigh) -- 35 64 9.8 -100 120 --- 38 72 -2 200 250 1 1 mΩ Nominal load current, (pin 3 to 5) ISO 10483-1, 6.7:VON=0.5V, TC=85°C 8.8 -50 50 0.1 0.1 A mA µs Output current (pin 5) while GND disconnected or GND pulled up6), Vbb=30 V, VIN= 0, see diagram page 7 Turn-on time IN Turn-off time IN RL = 12 Ω, Slew rate on 10 to 30% VOUT, RL = 12 Ω, Slew rate off 70 to 40% VOUT, RL = 12 Ω, Operating Parameters Operating voltage to 90% VOUT: ton to 10% VOUT: toff dV /dton -dV/dtoff V/µs V/µs Tj =-40 Vbb(on) Tj =+25...+150°C: Overvoltage protection7) Tj =-40°C: Vbb(AZ) Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) 8) Tj=-40...+25°C: Ibb(off) VIN=0; see diagram on page 9 Tj= 150°C: IL(off) Off-State output current (included in Ibb(off)) VIN=0 Operating current 9), VIN=5 V IGND 4.75 41 43 ----- ---47 5 -1 0.8 41 43 -52 8 25 10 1.4 V V µA µA mA 6) 7) 8) 9) not subject to production test, specified by design Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and circuit diagram page 7. Measured with load Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 4 2003-Oct-01 BTS436L2 Parameter and Conditions at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions10) Current limit (pin 3 to 5) (see timing diagrams on page 11) IL(lim) 46 39 30 --41 43 150 ---100 58 51 38 40 1.9 68 58 46 --A Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 11) Thermal shutdown time11) Tj,start = 25°C: toff(SC) (see timing diagrams on page 11) A ms Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 12) Reverse battery voltage drop (Vout > Vbb)13 ) IL = -2 A Tj=150 °C: Diagnostic Characteristics Open load detection current (on-condition) VON(CL) Tjt ∆Tjt -Vbb -VON(rev) IL (OL) 47 -10 -600 -- 52 --32 -900 V °C K V mV mA Input and Status Feedback14) Input resistance see circuit page 7 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 5 V Delay time for status with open load after switch off (see timing diagrams on page 11) RI VIN(T+) VIN(T-) ∆ VIN(T) IIN(off) IIN(on) td(ST OL4) 2.5 1.7 1.5 -1 20 100 3.5 --0.5 -50 520 6 3.2 --50 90 900 kΩ V V V µA µA µs Status output (open drain) Zener limit voltage ST low voltage 10) IST = +1.6 mA: VST(high) IST = +1.6 mA: VST(low) 5.4 -- 6.1 -- -0.4 V 11) 12) 13) 14) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 7). not subject to production test, specified by design If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group Page 5 2003-Oct-01 BTS436L2 Truth Table Input Normal operation Open load Overtemperature L = "Low" Level H = "High" Level level L H L H L H Output level L H Z H L L Status BTS 436L2 H H H L H L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11) Semiconductor Group Page 6 2003-Oct-01 BTS436L2 Terms Ibb I IN 2 I ST V V bb IN V ST 4 ST GND 1 R GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON Overvolt. and reverse batt. protection + 5V + Vbb V IN R ST RI Logic R ST ST V Z1 Z2 OUT PROFET GND R GND Signal GND R Load Load GND Input circuit (ESD protection) R IN I VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω, RST= 15 kΩ, RI= 3.5 kΩ typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active ESD-ZD I GND I I Open-load detection in on-state Open load, if VON < RON·IL(OL); IN high + V bb The use of ESD zener diodes as voltage clamp at DC conditions is not recommended Status output +5V ON VON OUT R ST(ON) ST Logic unit Open load detection GND ESDZD GND disconnect 3 IN Vbb PROFET 4 VON ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Inductive and overvoltage output clamp + V bb V Z 2 OUT 5 ST GND 1 V GND V bb V IN V ST OUT GND PROFET Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. VON clamped to 47 V typ. Semiconductor Group Page 7 2003-Oct-01 BTS436L2 GND disconnect with GND pull up 3 IN Vbb PROFET 4 ST GND 1 V V bb V IN ST V OUT Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL ELoad 2 5 IN = GND ST GND ZL { L RL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT Energy stored in load inductance: EL = 1/2·L·I L W hile demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, 2 5 with an approximate solution for RL > 0 Ω: IL· L IL·RL ) EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V L OUT(CL)| bb Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 Ω ZL [mH] 1000 For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection. 100 10 1 0.1 0 2 4 6 10 12 14 16 18 IL [A] Semiconductor Group Page 8 2003-Oct-01 BTS436L2 Typ. on-state resistance RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mΩ] 80 70 60 50 40 30 20 10 3 5 7 9 30 40 Vbb [V] Tj = 150°C 25°C -40°C Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [µA] 45 40 35 30 25 20 15 10 5 0 -50 0 50 100 150 200 Tj [°C] Semiconductor Group Page 9 2003-Oct-01 BTS436L2 Timing diagrams Figure 1a: Vbb turn on: IN Figure 2b: Switching a lamp, IN V bb ST V OUT V OUT ST open drain t I L t proper turn on under all conditions The initial peak current should be limited by the lamp and not by the current limit of the device. Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition: Figure 2c: Switching an inductive load IN IN VOUT 90% t on dV/dton 10% t dV/dtoff ST off V OUT IL I L t I L(OL) t *) if the time constant of load is too large, open-load-status may occur Semiconductor Group Page 10 2003-Oct-01 BTS436L2 Figure 3a: Short circuit shut down by overtemperature, reset by cooling IN other channel: normal operation Figure 5a: Open load: detection in ON-state, open load occurs in on-state IN I L ST I t d(ST OL) t d(ST OL) L(lim) I L(SCr) VOUT t ST off(SC) I t normal L open normal t td(ST OL) = 10 µs typ. Heating up of the chip may require several milliseconds, depending on external conditions Figure 4a: Overtemperature: Reset if Tj