BTS441R

BTS 441 R Smart Highside Power Switch One Channel: 20mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation RON Vbb(on) IL(ISO) IL(lim) 20mΩ 4.75 ... 41V 21A 65A Package TO-263-5-2 TO-220-5-12 SMD Straight General Description • • N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Application • • • • µC compatible power switch for 5V, 12 V and 24 V DC applications All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Funktions • • • • • Very low standby current Optimized static electromagnetic compatibility (EMC) µC and CMOS compatible Fast demagnetization of inductive loads Stable behaviour at undervoltage Protection Functions • • • • • • • • Short circuit protection Current limitation Overload protection Thermal shutdown Overvoltage protection (including load dump) with external GND-resistor Reverse battery protection with external GND-resistor Loss of ground and loss of Vbb protection Electrostatic discharge (ESD) protection Vbb IN ST Logic with protection functions OUT Load Diagnostic Function • • • Diagnostic feedback with open drain output Open load detection in OFF-state Feedback of thermal shutdown in ON-state PROFET GND Infineon Technologies AG 1 2003-Oct-01 BTS 441 R Functional diagram overvoltage protection internal voltage supply logic gate control + charge pump current limit VBB clamp for inductive load OUT IN ESD ST GND temperature sensor Open load detection LOAD PROFET Pin Definitions and Functions Pin 1 2 3 4 5 Tab Symbol GND IN Vbb ST OUT Vbb Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage The tab is shorted to pin 3 Diagnostic feedback, low on failure Output to the load Positive power supply voltage The tab is shorted to pin 3 Pin configuration (top view) Tab = VBB 1 2 (3) 4 5 GND IN ST OUT Infineon Technologies AG 2 2003-Oct-01 BTS 441 R Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2)= 2 Ω, RL= 0,5 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) ; TC≤25°C Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. (see diagram, p.7) IL(ISO) = 21 A, RL= 0 Ω: E4)AS=0.7J: Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: Out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF Symbol Vbb Vbb VLoad dump3) IL Tj Tstg Ptot ZL VESD Values 43 34 60 self-limited -40 ...+150 -55 ...+150 125 2.1 1.0 4.0 8.0 -10 ... +16 ±2.0 ±5.0 ≤1 ≤ 75 ≤ 33 Unit V V V A °C W mH kV Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 VIN IIN IST RthJC RthJA V mA Thermal resistance chip - case: junction - ambient (free air): SMD version, device on pcb5): K/W 1) 2) 3) 4) 5) Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 EAS is the maximum inductive switch off energy Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG 3 2003-Oct-01 BTS 441 R Electrical Characteristics Parameter and Conditions at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (Vbb (pin3) to OUT (pin5)); IL = 2 A Vbb≥7V: Tj=25 °C: RON Tj=150 °C: see diagram page 9 -- 15 28 21 -90 110 --- 20 37 -2 200 250 1 1 mΩ Nominal load current (pin 3 to 5) ‘ISO 10483-1, 6.7:VON=0.5V, TC=85°C Output current (pin 5) while GND disconnected or GND pulled up6), Vbb=30 V, VIN= 0, see diagram page 7 IL(ISO) IL(GNDhigh) 17 -40 40 0.1 0.1 A mA µs V/µs V/µs Turn-on time IN Turn-off time IN RL = 12 Ω, Slew rate on 10 to 30% VOUT, RL = 12 Ω, Slew rate off 70 to 40% VOUT, RL = 12 Ω, Operating Parameters Operating voltage to 90% VOUT: ton to 10% VOUT: toff dV /dton -dV/dtoff Tj =-40°C Vbb(on) Tj =+25°C Tj =+105°C6) Tj =+150°C Overvoltage protection7) Tj =-40°C: Vbb(AZ) I bb = 40 mA Tj =+25...+150°C: Standby current (pin 3) 8) Tj=-40...+25°C: Ibb(off) Tj=+105°C6): VIN=0 see diagram page 9 Tj=+150°C: IL(off) Off-State output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)9), VIN=5 V, IGND 4.75 4.75 4.75 5.0 41 43 ------ -----47 5 --1.5 2 41 43 43 43 -52 10 10 25 10 4 V V µA µA mA 6) 7) 8) 9) not subject to production test, specified by design see also VON(CL) in table of protection functions and circuit diagram page 7 Measured with load, typ. 40 µA when no load in off Add IST, if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG 4 2003-Oct-01 BTS 441 R Parameter and Conditions at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions10) Current limit (pin 3 to 5) (see timing diagrams, page 9) Repetitive short circuit current limit Tj = Tjt (see timing diagrams, page 10) Thermal shutdown time11)12) (see timing diagram on page 10) Tj =-40°C: IL(lim) Tj =25°C: =+150°C: Tj IL(SCr) Tj,start =25°C: Toff(SC) --40 --41 43 150 ---- -65 -55 14 -47 -10 -540 85 -----52 --32 -- A A ms V °C K V mV ;Tj =-40°C: Tj=25..150°C: VON(CL) Thermal overload trip temperature Tjt Thermal hysteresis ∆Tjt Reverse battery (pin 3 to 1) 13) -Vbb Reverse battery voltage drop (VOUT > Vbb) -VON(rev) IL = -2A Tj =+150°C: at VOUT = Vbb - VON(CL), IL= 40 mA Output clamp (inductive load switch off) 10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) not subject to production test, specified by design 12) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 13) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 1 and circuit page 7). Infineon Technologies AG 5 2003-Oct-01 BTS 441 R Parameter and Conditions at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Diagnostic Characteristics Open load detection voltage14) V OUT(OL) 1 2 3 4 V Input and Status Feedback15) Input resistance see circuit page 7 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2) VIN = 0.4 V: On state input current (pin 2) VIN = 5 V: Delay time for status with open load after switch off (see timing diagrams, page 11), Status output (open drain) Zener limit voltage IST = +1.6 mA: ST low voltage IST = +1.6 mA:: RI VIN(T+) VIN(T-) ∆ VIN(T) IIN(off) IIN(on) tST delay 2.5 1.2 0.8 -1 4.5 -- 3.8 --0.3 -12 -- 6.5 2.2 --15 24 500 kΩ V V V µA µA µs VST(high) VST(low) 5.4 -- 6.1 -- -0.4 V Truth Table IN Normal operation Open load Short circuit to Vbb Overtemperature L H L H L H L H OUT L H Z H H H L L ST H H L16) H L H H L L = "Low" Level H = "High" Level Z = high impedance, potential depends on external circuit Status signal valid after the time delay shown in the timing diagrams 14) 15) External pull up resistor required for open load detection in off state If a ground resistor RGND is used, add the voltage drop across this resistor. 16) L, if potential at the Output exceeds the OpenLoad detection voltage Infineon Technologies AG 6 2003-Oct-01 BTS 441 R Terms V Ibb bb I IN 2 V IN I ST VST 4 ST GND 1 R GND IGND IN Leadframe, 3 Vbb IL PROFET OUT 5 VON R ST ST V Z1 Overvolt. and reverse batt. protection + 5V + Vbb V IN R ST RI Logic Z2 OUT PROFET GND VOUT R GND Signal GND R Load Load GND Input circuit (ESD protection) R IN I VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω, RST= 15 kΩ, RI= 3.5 kΩ typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active Open-load detection ESD-ZD I GND I I OFF-state diagnostic condition: Open Load, if VOUT > 3 V typ.; IN low V The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. bb Status output +5V R EXT OFF V OUT R ST(ON) ST Logic unit Open load detection GND ESDZD Signal GND ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). GND disconnect Inductive and overvoltage output clamp + V bb V Z IN Vbb PROFET OUT ST V ON GND V bb V IN V ST V GND OUT GND PROFET Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . VON clamped to 47 V typ. Infineon Technologies AG 7 2003-Oct-01 BTS 441 R Inductive load switch-off energy dissipation GND disconnect with GND pull up E bb E AS IN Vbb IN PROFET OUT Vbb PROFET OUT ELoad ST GND = ST GND ZL V V bb IN ST V V GND { R L L EL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. Energy stored in load inductance: EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, 2 Vbb disconnect with charged inductive load high IN Vbb PROFET OUT with an approximate solution for RL > 0 Ω: EAS= IL· L (V + |VOUT(CL)|) 2·RL bb ln (1+ |V IL·RL OUT(CL)| ) ST GND Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [mH] 1000 V bb For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection. 100 10 1 0.1 0 5 10 15 20 25 30 35 IL [A] Infineon Technologies AG Page 8 2003-Oct-01 BTS 441 R Typ. on-state resistance RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mΩ] 40 35 30 25 20 15 10 5 3 5 7 9 30 40 Vbb [V] Tj = 150°C 25°C -40°C Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [µA] 20 15 10 5 0 -50 0 50 100 150 200 Tj [°C] Infineon Technologies AG Page 9 2003-Oct-01 BTS 441 R Timing diagrams Figure 1a: Vbb turn on: IN IN Figure 2b: Switching a lamp, V bb ST V OUT V OUT ST open drain t I L t proper turn on under all conditions Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition: Figure 3a: Short circuit shut down by overtemperature, reset by cooling IN IN other channel: normal operation VOUT 90% t on dV/dton 10% t dV/dtoff I L I off L(lim) I L(SCr) IL t ST off(SC) t t Heating up may require several milliseconds, depending on external conditions Infineon Technologies AG 10 2003-Oct-01 BTS 441 R Figure 4a: Overtemperature: Reset if Tj