BTS443P_07

PROFET® BTS 443 P Smart Highside Power Switch • Reverse battery protection by self turn on of power MOSFET Reversave Features • Short circuit protection • Current limitation • Overload protection • Thermal shutdown PG-TO252-5-11 • Overvoltage protection (including load dump) • Loss of ground protection • Loss of Vbb protection (with external diode for charged inductive loads) • Very low standby current • Fast demagnetisation of inductive loads • Electrostatic discharge (ESD) protection • Optimized static electromagnetic compatibility (EMC) • Green product (RoHS compliant) • AEC qualified Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation Package Vbb(on) RON IL(ISO) IL(SCr) 5.0 ... 36 V 16 mΩ 25 A 65 A Diagnostic Function Application • Proportional load current sense (with defined fault signal during thermal shutdown) • Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads • All types of resistive, capacitive and inductive loads (no PWM with inductive loads) • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab Voltage source Overvoltage protection Current limit Gate protection OUT R bb + V bb 1, 5 IL Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection Current Sense Load 2 IN ESD Logic I IN Temperature sensor I IS IS  PROFET Load GND VIN V IS Logic GND 4 R IS Data Sheet Page 1 of 15 Rev. 1.0, 2007-02 PROFET® BTS 443 P Pin 1 2 Tab/(3) 4 5 Symbol OUT IN Vbb IS OUT O I + S O Function Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is shorted to this pin. Diagnostic feedback providing a sense current proportional to the load current; high current on failure (see Truth Table on page 6) Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*) *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection (see also diagram on page 9) Tj=-40...150 °C: Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) TC ≤ 25°C Inductive load switch-off energy dissipation, single pulse U=12V, I=10A, L=3mH Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF Current through input pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 7 Symbol Vbb Vbb VLoad dump2) IL Tj Tstg Ptot EAS VESD IIN IIS Values 36 241) 60 self-limited -40 ...+150 -55 ...+150 42 0.15 4.0 +15, -100 +15, -100 Unit V V V A °C W J kV mA 1) 2) Short circuit is tested with 100mΩ and 20µH VLoad dump is set-up without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Data Sheet Page 2 of 13 Rev. 1.0, 2007-02 PROFET® BTS 443 P Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC3) junction - ambient (free air): RthJA SMD version, device on PCB4): Values typ max -1.5 80 -45 -Unit K/W Electrical Characteristics Parameter and Conditions at Tj= -40°C...150°C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) VIN= 0, IL = 5 A Tj=25 °C: RON VON(NL) --13 25 50 16 31 -mΩ mV A IL(ISO) IL(nom) ton toff dV /dton -dV/dtoff 21 6.2 150 70 0.1 0.1 25 7.6 ------410 410 1 1 µs Tj=150 °C: Output voltage drop limitation at small load currents (Tab to pin 1,5) Tj=-40...150 °C: Nominal load current (Tab to pin 1,5) ISO Proposal: TC=85°C, VON≤0.5V, Tj≤150°C SMD 4): TA=85°C, VON≤0.5V, Tj≤150°C Turn-on time IIN to 90% VOUT: Turn-off time IIN to 10% VOUT: RL = 2,5Ω, Tj=-40...150 °C Slew rate on 10 to 30% VOUT, RL = 2.5 Ω, Tj=-40...150 °C Slew rate off 70 to 40% VOUT, RL = 2.5 Ω, Tj=-40...150 °C V/µs V/µs 3) 4) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet Page 3 of 13 Rev. 1.0, 2007-02 PROFET® BTS 443 P Parameter and Conditions at Tj= -40°C...150°C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Operating Parameters Operating voltage (VIN=0V) Undervoltage shutdown 5) Undervoltage restart of charge pump (VIN=0V) Overvoltage protection 6) Ibb=15 mA Standby current IIN=0 Vbb(on) VbIN(u) Vbb(ucp) VZ,IN 5.0 1.5 3.0 61 --- -3.0 4.5 68 2 4 36 4.5 6.0 -5 8 V V V V µA Tj=-40...+25°C: Ibb(off) Tj=150°C: Protection Functions 7) Short circuit current limit (Tab to pin 1,5) VON=8V, time until limitation max. 300µs Tj =-40°C: Tj =25°C: =+150°C: Tj Repetitive short circuit current limit, Tj = Tjt Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA 8) Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery voltage On-state resistance (pin 1,5 to pin 3) IL(SC) IL(SCr) VON(CL) Tjt ∆Tjt 35 35 35 -38 150 -- 75 65 65 65 42 -10 110 110 125 -48 --- A A V °C K -Vbb ----- --16 25 200 20 22 19 32 -- V mΩ Vbb= - 8V, VIN= 0, IL = -5 A, RIS = 1 kΩ, Tj=25 °C: RON(rev) Vbb= -12V, VIN= 0, IL = -5 A, RIS = 1 kΩ, Tj=25 °C: Tj=150 °C: Integrated resistor in Vbb line Rbb Ω 5) 6) 7) 8) VbIN=Vbb-VIN see diagram on page 11. see also VON(CL) in circuit diagram on page 7. Integrated protection functions are designed to prevent IC destruction under fault condition described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not for continuous repetitive operation. see also page 12. Data Sheet Page 4 of 15 Rev. 1.0, 2007-02 PROFET® BTS 443 P Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS VON1.5V, typ. Tj= -40...+150°C: IIS,fault Fault-Sense signal delay after negative input slope tdelay(fault) Current sense leakage current IIN = 0: IIS(LL) VIN = 0, IL = 0: IIS(LH) Current sense settling time to IIS static±10% after tson(IS) positive input slope, IL = 0 20 A 10) Tj= -40...+150°C: Overvoltage protection Ibb = 15 mA Tj = -40...+150°C: VbIS(Z) Input Required current capability of input switch IIN(on) Tj =-40..+150°C: Maximum input current for turn-off Tj =-40..+150°C: IIN(off) ----4 -0.5 12 400 µs µA kILIS -- 8200 -- 7400 7500 7500 6800 7200 7200 6800 6800 6800 6800 6800 6800 -2.5 8300 8300 8200 8300 8300 8200 8500 8500 8100 8600 8600 8600 n.a. 4 9100 9100 8800 9700 9300 9000 10000 9800 9200 10500 10500 10500 --0.8 mA ms 61 68 -- V --- 0.7 -- 1.2 50 mA µA 9) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation. 10) Not subject to production test, specified by design. Data Sheet Page 5 of 15 Rev. 1.0, 2007-02 PROFET® BTS 443 P Truth Table Input Current level L H L H L H L H L H L H Output level L H L H L L L L H H Z H Current Sense IIS 0 nominal 0 IISfault 0 IISfault 0 IISfault 0 5V. If you want to measure load currents up to IL(M), RIS should be less than IS V Z,VIS Signal GND Vbb − 5V . I L ( M ) / K ilis Rbb = 200 Ω typ., VZ,IN = VZ,IS = 68 V typ., RIS = 1 kΩ nominal. Note that when overvoltage exceeds 73 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Data Sheet Page 7 of 15 Rev. 1.0, 2007-02 PROFET® BTS 443 P Reversave (Reverse battery protection) -Vbb R bb Version b: V bb IN Vbb PROFET OUT IN OUT R IN Logic Power Transistor IS VZb IS RL D Signal R IS RV Power Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a necessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit: RV≥1kΩ, R IS = 1 kΩ nominal. Add RIN for reverse battery protection in applications with Vbb above 16V; 0.05 A, 1 1 1 recommended value: + + = RIN RIS RV | V | −12V bb To minimise power dissipation at reverse battery operation, the summarised current into the IN and IS pin should be about 50mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV. Since the current through Rbb generates additional heat in the device, this has to be taken into account in the overall thermal considerations. V bb IN Vbb PROFET OUT RL IS Vbb disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 73 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a: V bb IN V bb OUT PROFET IS VZL Data Sheet Page 8 of 15 Rev. 1.0, 2007-02 PROFET® BTS 443 P Inductive load switch-off energy dissipation E bb E AS V V bb ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L[mH] 100 { 10 RIS ER Energy stored in load inductance: EL = 1/2·L·I L While demagnetising load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L (V + |VOUT(CL)|) 2·RL bb IL·RL 2 1 0.1 ln (1+ |V OUT(CL)| ) 0.01 0 25 50 75 100 IL [A] The device is not suitable for permanent PWM with inductive loads if active clamping occurs every cycle. Data Sheet Page 9 of 15 Rev. 1.0, 2007-02 PROFET® BTS 443 P Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IL tslc(IS) t slc(IS) IIL Load 1 Load 2 IIS IIS tson(IS) t soff(IS) t t The sense signal is not valid during a settling time after turn-on/off and after change of load current. Sense current above IIS,fault can occur at very high inrush currents. Figure 1b: typical behaviour of sense output: Figure 2b: Switching an inductive load: IS IIS,fault >= 2.5mA IIN VOUT IL(lim) = 20A IL IL IIS t Data Sheet Page 10 of 15 Rev. 1.0, 2007-02 PROFET® BTS 443 P Figure 3a: Short circuit: Figure 5a: Undervoltage restart of charge pump, overvoltage clamp IN 12 VOUT 10 I VIN = 0 L 8 I L(SCp) I L(SCr) V 6 dynamic, short Undervoltage not below VbIN(u) ON(CL) 4 IIS IISfault t 2 IIN = 0 VON(CL) 0 0 V bIN(u) 2 4 6 8 V bIN(ucp) 10 V12 bb Figure 4a: Overtemperature Reset if Tj