H i g h c u r r e n t P R O F E T TM
BTS50060-1TEA
Smart High-Side Power Switch One Channel
Datasheet
Rev. 1.1, 2011-04-13
Automotive
BTS50060-1TEA
1 2 3 3.1 3.2 3.3 4 4.1 4.2 4.3 5 5.1 5.1.1 5.1.2 5.1.3 5.1.4 5.2 5.3 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 5.3.6 5.3.7 5.4 5.4.1 5.4.2 5.4.3 5.5 6 6.1 6.2 6.2.1 6.2.2 6.2.3 6.2.4 7 7.1 8 9
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Definition of Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching a Resisitve Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching an Inductive Load - Infineon® SMART CLAMPING . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching a Capacitive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inverse Load Current Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection by Over Current Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection by Over Temperature Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Infineon® INTELLIGENT LATCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection during Loss of Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection during Loss of Load or Loss of VS Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection during ESD or Over Voltage Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sense Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Enhancing Accuracy of the Sense Output by End of Line Calibration . . . . . . . . . . . . . . . . . . . . . . . Short-to-Battery detection / Open Load Detection in OFF state . . . . . . . . . . . . . . . . . . . . . . . . . . . Undervoltage Shutdown & Restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics BTS50060-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Parameter Dependencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 12 12 13 13 14 15 15 16 16 16 17 17 18 19 19 21 21 22 23 23 27 27 30 31 32
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Package Outlines and Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Datasheet High current PROFETTM
2
Rev. 1.1, 2011-04-13
Smart High-Side Power Switch One Channel
BTS50060-1TEA
1
Application • • • •
Overview
All types of resistive, inductive and capacitive loads Most suitable for driving loads with PWM frequency from 0 Hz (DC operation) up to 1kHz and above Drives loads with high inrush current, e.g. PTC heaters Replaces electromechanical relays, fuses and discrete circuits
Features • • • • • • • • • • PG-TO252-5-311 Reduced switching losses Optimized for EMC - low emission, high immunity Optimized for PWM frequencies of approx. 100Hz 3.3V and 5V compatible logic inputs Advanced analog load current sense signal supporting easy calibration for very high accuracy Embedded diagnosis features (e.g. open load detection at ON and OFF) Embedded protection functions (e.g. over current shutdown, over temperature shutdown) Infineon® INTELLIGENT LATCH Green Product (RoHS compliant) AEC Qualified
Description Embedded in a PG-TO252-5-311 package, the BTS50060-1TEA is a 6mΩ single channel Smart High-Side Power Switch. It is based on Smart power chip on chip technology with a P-channel vertical power MOSFET, providing protective and diagnostic functions. It is specially designed to drive loads in the harsh automotive environment. Table 1 Parameter Range of typical PWM frequencies Maximum On-state Resistance at Tj = 150 °C Nominal Supply Voltage Range for Operation Nominal Load Current (DC operation) Typical Load Current at 100Hz Typical Stand-by Current at Tj = 25 °C Minimum short circuit current shutdown threshold Maximum reverse battery voltage Product Summary Symbol Values 0 Hz ... 1 kHz 12 mΩ 6 V … 19 V 16.5 A 13.5 A 5 µA 60 A 16 V
fPWM RDS(ON)_150 VS(NOM) IL(NOM) IL(100Hz) IS(OFF) IL(SC) -VS(REV)
Type BTS50060-1TEA Datasheet High current PROFETTM
Package PG-TO252-5-311 3
Marking S50060A Rev. 1.1, 2011-04-13
BTS50060-1TEA
Block Diagram Embedded Protection functions • • • • Infineon® INTELLIGENT LATCH - resettable latch resulting from protective switch OFF Over current protection by short-circuit shutdown Overload protection by over-temperature shutdown Infineon® SMART CLAMPING
Embedded Diagnosis functions • • • • Advanced analog load current sense signal with defined positive offset current; enabling load diagnosis, e.g. open load at ON, overload Providing defined fault signal Open Load at OFF detection Short-to-battery detection
2
Block Diagram
ESD + over voltage protection Vs A Input circuit IN RIN & Protection Temp IS Diagnosis Gate driver
Smart Clamping
Sense output
OUT
Figure 1
GND Block Diagram of BTS50060-1TEA
BlockDiagram .emf
For a Diagram of Diagnosis & Protection block, please see Figure 14.
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BTS50060-1TEA
Pin Configuration
3
3.1
Pin Configuration
Pin Assignment
OUT (TAB)
3 (OUT)
GND
IN
1
2
4
IS
5
VS
PinConfiguration .emf
Figure 2
Pin Configuration
3.2
Pin 1 2
Pin Definitions and Functions
Symbol GND IN Function Ground; Ground connection for control chip. Input; Digital 3.3 V and 5 V compatible logic input; activates power switch if set to HIGH level; Includes internal pull-down resistor RIN. Output; Protected high side power output Sense; Provides analog sense current signal and defined fault signal. Supply Voltage; Positive supply voltage for Logic and Power Stage2)
Tab; 31) OUT 4 5 IS Vs
1) Tab and pin 3 are internally connected. Pin 3 is cut. 2) PCB traces have to be designed to withstand maximum current occuring in the application.
3.3
Definition of Terms
Figure 3 shows all terms used for currents and voltages in this data sheet, with associated convention for positive values.
VS IIN VIN VS IN
IS
VSIS IL IIS VIS
VSD
OUT GND IGND IS
V OUT
Terms.emf
Figure 3
Definition of currents and voltages
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BTS50060-1TEA
General Product Characteristics
4
4.1
Table 2
General Product Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40°C to 150°C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified) Parameter Supply voltages Supply Voltage Reverse Polarity Voltage on pin GND, IS Supply voltage for short circuit protection Symbol Min. Values
T y p .
Unit Max. 28 16 28 V V V
Note / Test Condition –
2) 3)
Number
VS |-VS(REV)| VBAT(SC)
-0.3 0 0
P_4.1 , P_4.2 P_4.3
4)
RECU = 20mΩ, RCable = 6mΩ/m, LCable = 1µH/m, l = 0 or 5m,
see Chapter 5.3.1
Supply voltage for load dump VS(LD) protection Short circuit capability Short circuit cycle capability IN + IS + GND pin Voltage at IN pin Current through IN pin Voltage at IS pin Current through IS pin Current through GND pin Power stage Load current
–
45
V
RI = 2 Ω 5) , RL = 1.0 Ω, td = 400ms
4)6)
P_4.4
nRSC1
–
1 E6 (Grade A) 6 2
–
P_4.21
VIN IIN VIS IIS IGND
-0.3 -2 -0.3 -2 -2 -IL(SC) –
V mA V mA mA A mJ
– t < 2min – – – –
P_4.5 P_4.6 P_4.7 P_4.8 P_4.9 P_4.10 P_4.11
VS
10 10
IL Maximum energy dissipation EAS
for switching OFF an inductive load - single pulse
IL(SC)
280
VS = 13.5V IL(0) = 20A Tj(0) = 150°C
See Figure 4 and Chapter 5.1.2
Maximum energy dissipation EAR for switching OFF an inductive load - repetitive pulse Temperatures Junction Temperature Datasheet High current PROFETTM
–
82
mJ
VS = 13.5V IL(0) = 20A Tj(0) = 105°C
See Figure 4 and Chapter 5.1.2
P_4.13
Tj
-40 6
150
°C
–
P_4.14 Rev. 1.1, 2011-04-13
BTS50060-1TEA
General Product Characteristics Table 2 Absolute Maximum Ratings (cont’d)1)
Tj = -40°C to 150°C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified) Parameter Dynamic temperature increase while switching Storage Temperature ESD Susceptibility ESD Resistivity HBM all Pins to GND ESD Resistivity HBM VS vs. GND, VS vs. OUT, OUT vs. GND ESD Resistivity CDM all pins to GND ESD Resistivity CDM corner pins Symbol Min. Values
T y p .
Unit Max. 60 150 2 4 K °C kV kV
Note / Test Condition – – HBM7) HBM7)
Number P_4.15 P_4.16 P_4.17 P_4.18
∆Tj Tstg VESD1 VESD2
– -55 -2 -4
VESD3 VESD4
-500 -750
500 750
V V
CDM8) CDM8)
P_4.19 P_4.20
1) Not subject to production test, specified by design. 2) In case of reverse polarity voltage on pin IN, IIN needs to be limited (see P_4.6) by external resistor RINPUT, see Figure 53. 3) In case of reverse polarity voltage, current through the OUT pin needs to be limited by external circuitry to prevent over heating (see P_4.14). Power dissipation during reverse polarity voltage can be calculated by Equation (3). Please note, build-in protection functions are not available during reverse polarity condition. 4) In accordance to AEC Q100-012 and AEC Q101-006. 5) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1. 6) Test aborted after 1 E6 cycles. 7) ESD susceptibility, HBM according to EIA/JESD 22-A114B 8) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 or ESDA STM5.3.1
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General Product Characteristics
1000
100 E A [mJ] 10 1 10 I L(0) [A] E_AR (Tj(0) = 105°C) E_AS (Tj(0) = 150°C)
Figure 4 Notes 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Maximum energy dissipation for switching OFF an inductive load EA vs. load current
100
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BTS50060-1TEA
General Product Characteristics
4.2
Table 3 Parameter
Functional Range
Functional Range Symbol Min. Values
T y p .
Unit Max. 19 28 V V V
Note / Test Condition –
1)2)
Number P_4.23 P_4.24 P_4.25
Nominal Supply Voltage Range for Operation Extended Supply Voltage Range for Operation Extended Supply Voltage Range for short dynamic undervoltage swings Junction Temperature
VS(NOM) VS(EXT) VS(DYN)
6
VS(UV)ON VS(UV)OFF
VS(UV)ON
1)2)3)
Tj
-40
150
°C
–
P_4.26
1) see Chapter 5.5, Undervoltage turn ON voltage and Undervoltage turn OFF voltage 2) In extended supply voltage range, the device is functional but electrical parameters are not specified. 3) Operation only if supply voltage was in range of VS(EXT) before undervoltage swing. Otherwise, device will stay OFF.
6V VS(UV)OFF VS(UV)ON V S(DYN)
13.5V VS(NOM) VS(EXT)
19V 28V
VS
FunctionalRange .emf
Figure 5
Overview of functional ranges
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table.
Datasheet High current PROFETTM
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Rev. 1.1, 2011-04-13
BTS50060-1TEA
General Product Characteristics
4.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Table 4 Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient - 2s2p Thermal Resistance Symbol Min. Values Typ. 1 22 Max. 1.1 – K/W K/W – – Unit Note / Test Condition –
2)
Number P_4.27 P_4.29
R
1) thJC
RthJA_2s2p1)
1) Not subject to production test, specified by design. 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm board with 2 inner copper layers (2 × 70 mm Cu, 2 × 35 mm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
Figure 6 and Figure 7 are showing the typical thermal impedance of BTS50060-1TEA mounted according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s and 2s2p board. The product (chip + package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2x 70µm Cu, 2 x 35µm Cu). Where applicable, a thermal via array under the exposed pad contacted the first inner copper layer. The PCB layer structure is shown in Figure 8. The PCB layout is shown in Figure 9.
V PLQ IRRWSULQW V PPð V PPð VS = WK-$ >.:@
VS
= WK-$ >.:@
'
W 3 >VHF@
W 3 >VHF@
Figure 6
Typical transient thermal impedance Zth(JA) = f(tP) for different cooling areas
Figure 7
Typical transient thermal impedance Zth(JA) = f(tP) for PWM operation with duty cycles D = t / tperiod on a 2s2p PCB
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General Product Characteristics
1s PCB 70µm 1.5mm
PCB 1s.emf
2s2p PCB 70µm 1.5mm 35µm
0.3mm
Figure 8 Cross section of 1s and 2s2p PCB used for ZthJA simulation
PCB 2s2p.emf
600mm² 300mm² min
PCB front.emf
Figure 9
Front view of PCB layout used for ZthJA simulation
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BTS50060-1TEA
Functional Description
5
5.1
Functional Description
Power Stage
The power stage is built by a P-channel vertical power MOSFET (DMOS). The ON-state resistance RDS(ON) depends on the supply voltage VS as well as the junction temperature Tj. Figure 25 shows the dependencies for the typical ON-state resistance. The behavior in reverse polarity is described in Chapter 5.3.4. A HIGH signal at the input pin (see Chapter 5.2) causes the power DMOS to switch ON. A LOW signal at the input pin causes the power DMOS to switch OFF.
5.1.1
Switching a Resisitve Load
Defined slew rates for turn ON and OFF as well as edge shaping support PWM’ing of the load while achieving lowest EMC emission at minimum switching losses. Figure 10 shows the typical timing when switching a resistive load.
VIN VIN(H),min VIN(L),max tON VOUT 90% VS 70% VS (dV/dt)ON 30% VS 10% VS t IL (dV/dt)OFF tr tOFF tf t
t P Loss EON EOFF t
SwitchingResistiveLoad.emf
Figure 10
Switching a resistive load
5.1.2
Switching an Inductive Load - Infineon® SMART CLAMPING
When switching OFF inductive loads, the output voltage VOUT drops below ground potential due to the involved inductance ( -diL/dt = -vL/L ; -VOUT ≅ -VL ). To prevent the destruction of the device due to high voltages, there is a
Datasheet High current PROFETTM
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BTS50060-1TEA
Functional Description voltage clamp mechanism implemented that keeps the negative output voltage at a certain level (-VOUT = VS VSD(CL)). Please refer to Figure 1 and Figure 11 for details.
VOUT VS ON OFF VSD(CL) t
IL t
SwitchingInductance .emf
Figure 11
Switching an inductance
Nevertheless, the energy capability of the device is limited because the energy is converted into heat. That’s why the maximum allowed load inductance is limited as well. Please see Figure 4 for limitations of energy and load inductance. For calculating the demagnization energy, Equation (1) may be used:
RL × IL L- V S – V S D ( CL ) EA = V S D ( CL ) × ----- × -------------------------------- × ln 1 + ---------------------------------- + I L RL RL V SD ( CL ) – V S
The equation can be simplified under the assumption of RL = 0 Ω to:
(1)
V S D ( CL ) 2 1 E A = -- × L × IL × -------------------------------2 V S D ( CL ) – V S
(2)
The BTS50060-1TEA provides Infineon® SMART CLAMPING functionality. To optimize the energy capability for single and parallel operation, the clamp voltage VSD(CL) increases over the junction temperature Tj and load current IL. Figure 36 shows the dependency from Tj for the typical VSD(CL). Please refer also to Figure 14.
5.1.3
Switching a Capacitive Load
A capacitive load’s dominant characteristic is it’s inrush current. The BTS50060-1TEA can support inrush currents up to IL(SC). If the inrush current reaches IL(SC), the device may detect a short circuit and switch OFF. For a description of the short circuit protection mechanism, please refer to Chapter 5.3.1.
5.1.4
Inverse Load Current Operation
In case of a negative load current, e.g. caused by a load operating as a generator, the device can not block the current flowing through the intrinsic body diode. See Figure 12. The power stage of the device can be switched ON or stays ON as long as VIN = HIGH, reaching the same RDS(ON) as for positive load currents, if no fault condition is detected. In case of fault condition, the logic of the device will switch OFF the power stage and supply a fault signal IIS(fault). Since the device can not block negative load currents (even under fault conditions), it can not protect itself from overload condition. In the application, overload conditions, e.g. over temperature, must not occur during inverse load current operation.
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BTS50060-1TEA
Functional Description
VS
logic
-IL(inv)
OUT
GND
G
Figure 12
Inverse load current operation
5.2
Input Circuit
The input circuitry is compatible with 3.3 and 5V micro controllers. If VIN is set to VIN = VIN(H) (VIN = HIGH), the device will turn ON. See Figure 10 for the timings. If VIN is set to VIN = VIN(L) (VIN = LOW), the power stage of the device will be turned OFF. The input circuitry has a hysteresis ∆VIN. The input circuitry is compatible with PWM applications. Figure 13 shows the electrical equivalent input circuitry. The logic of the BTS50060-1TEA stays active for a delay time tRESET after the switch OFF signal.
IN R IN GND
InputCircuitry.emf
Figure 13
Input pin circuitry
Applying an input voltage of VIN > 20V (absolute maximum ratings exceeded!) may force the BTS50060-1TEA to deactivate parts of the logic circuitry. This includes the undervoltage shutdown, the undervoltage restart delay, and the analog sense function. In this case, also the short circuit shutdown threshold IL(SC) is set to typically 50A, and the latch reset time tRESET is reduced to typically 200µs. To reset this behavior, set input voltage to VIN = LOW for t>300µs.
Datasheet High current PROFETTM
14
LOAD
Invers.emf
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Functional Description
5.3
Protection Functions
The BTS50060-1TEA provides embedded protective functions. Integrated protection functions are designed to prevent the destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are designed for neither continuous nor repetitive operation. In case of overload, high inrush currents, or short circuit to ground, the BTS50060-1TEA offers several protection mechanisms. Figure 14 describes the functionality of the diagnosis and protection block.
Diagnosis & Protection
Undervoltage protection delay = td(UV) no delay Vs
VS(UV)
Input circuit
IN
No Undervoltage No FAULT
&
Gate driver
INTELLIGENT LATCH timer reset no delay delay = tRESET Sense output
0 1
QS QR
1
≥1
Tjt I L(SC)
Temp
A
I IS(fault)
≥1
ENABLE OUT
VOUT(OL)
Open Load at OFF
R OUT(GND)
DiagnosisProtection emf .
Figure 14
Diagram of Diagnosis & Protection block
5.3.1
Protection by Over Current Shutdown
The internal logic permanently monitors the load current IL. In the event of a load current exceeding the short circuit shutdown threshold (IL>IL(SC)), the output will switch OFF with a latching behavior. During an over current shutdown, an overshooting IL(SC)peak may occur, depending on the short circuit impedances. For the case the device is in ON state while short circuit appears, the typical overshooting IL(SC)peak as a function of the steepness of the short circuit current dISC/dt, see Chapter 6.2.3. For a detailed description of the latching behavior, please see Chapter 5.3.3. At lower supply voltages the current tripping level IL(SC) will decrease depending on the supply voltage. At VS = 4.7V, the current tripping level will be reduced to IL(SC)LV. Please refer to Figure 38 for typical current tripping level IL(SC) as a function of the supply voltage VS.
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Rev. 1.1, 2011-04-13
BTS50060-1TEA
Functional Description
5.3.2
Protection by Over Temperature Shutdown
The internal logic permanently monitors the junction temperature of the output stage. In the event of an over temperature (Tj > Tjt) the output will immediately switch OFF with a latching behavior, see Chapter 5.3.3 for details.
5.3.3
Infineon® INTELLIGENT LATCH
The BTS50060-1TEA provides Infineon® INTELLIGENT LATCH to avoid permanent resetting of a protective, latched switch OFF caused by over current shutdown or over temperature shutdown) in PWM applications. To reset a latched protective switch OFF the fault has to be acknowledged by commanding the input LOW for a minimum duration of treset. See Figure 15 for details.
VIN over temperature / short circuit VOUT IIS IIS(fault) IIS(OFFSET) latch
Figure 15
tRESET
tRESET
t t t
reset
latch
reset t
INTELLIGENTLATCH .emf
Infineon® INTELLIGENT LATCH - fault acknowledge and latch reset
5.3.4
Reverse Polarity Protection
Reverse polarity condition is the mix-up of the power supply connections of the entire application. This means, application GND connector is connected to positive supply voltage, while Vs pin is connected to negative supply voltage or ground potential. See Figure 16 and Figure 53.
VS
-IIN -VS(rev)
R INPUT
logic
R SENSE
-IL
OUT
RIS
GND
Figure 16
Reverse polarity condition 16 Rev. 1.1, 2011-04-13
Datasheet High current PROFETTM
LOAD
Revers.emf
BTS50060-1TEA
Functional Description Under reverse polarity condition, the output stage can not block a current flow. It will conduct a load current via the intrinsic body diode. The current through the output stage has to be limited either by the load itself or by external circuitry, to avoid over heating of the power stage. Power losses in the power stage during reverse polarity condition can be calculated by Equation (3):
P rev = ( – I L ( rev ) ) × ( – V SD ( rev ) )
(3)
Additionally, the current into the logic pins has to be limited to the maximum current described in Chapter 4.1 with an external resistors. Figure 53 shows a typical application. Resistors RINPUT and RSENSE are used to limit the current in the logic of the device and in the ESD protection stage. The recommended value for RINPUT = RSENSE = 10kΩ. As long as |-VS(rev)| < 16V, the current through the GND pin of the device is blocked by an internal diode.
5.3.5
Protection during Loss of Ground
In case of loss of the module ground or device ground connection (GND pin) the device protects itself by automatically turning OFF (when it was previously ON) or remains OFF (even if the load remains connected to ground), regardless if the input is driven HIGH or LOW. In case GND recovers the device may need a reset via the IN pin to return to normal operation.
5.3.6
Protection during Loss of Load or Loss of VS Condition
In case of loss of load with charged primary inductances the maximum supply voltage has to be limited. It is recommended to use a Z-diode, a varistor (VZa < 40V) or VS clamping power switches with connected loads in parallel. In case of loss of a charged inductive load, disturbances on pin OUT may require a reset on IN pin for the device to regain normal operation. In case of loss of VS connection with charged inductive loads, a current path with load current capability has to be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode or a varistor (VZb < 16V, VZL + VD < 16V). For higher clamp voltages currents through all pins have to be limited according to the maximum ratings. Please see Figure 17 and Figure 18 for details.
VS
VS
Smart Clamping
Smart Clamping
logic
VZa
OUT
logic
VZb
OUT
LOAD
GND
LOAD
GND
VD VZL
LossOfVs.emf
Figure 17
Loss of VS
Datasheet High current PROFETTM
17
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Functional Description
VS
Smart Clamping
logic
VZb VZa
OUT
GND
LOAD
LossOfLoad.emf
Figure 18
Loss of load
5.3.7
Protection during ESD or Over Voltage Condition
All logic pins have ESD protection. A dedicated clamp mechanism protects the logic IC against transient over voltages. See Figure 19 for details.
VS ESD protection IN V Z(IC) Over voltage protection OUT
IS
GND
OverVoltageProtection.emf
Figure 19
Over voltage protection
In the case (VS > max VS(SC))&(VS < VSD(CL)), the output transistor is still operational and follows the input. Parameters are no longer warranted and lifetime is reduced compared to normal mode. This specially impacts the short circuit robustness, as well as the maximum energy EAS the device can handle. The BTS50060-1TEA provides Infineon® SMART CLAMPING functionality, which suppresses non nominal over voltages by actively clamping the over voltage across the power stage and the load. This is achieved by controlling the clamp voltage VSD(CL) depending on the junction temperature Tj and the load current IL. See Figure 14 for details. Please refer also to Chapter 5.1.2.
Datasheet High current PROFETTM
18
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Functional Description
5.4
Diagnosis Functions
For diagnosis purpose, the BTS50060-1TEA provides an advanced analog sense signal at the pin IS. For an overview of the diagnosis functions, you may have a look at Figure 14 “Diagram of Diagnosis & Protection block”.
5.4.1
Sense Output
The current sense output is a current source driving a signal IIS proportional to the load current (see Equation (5)) as long as no “hard” failure mode occurs (short circuit to GND / over temperature) and VSIS = VS - VIS > 3V. It is activated and deactivated by the input signal. Usually, in the application a pull-down resistor RIS is connected between the current sense pin IS and GND pin. A typical value is RIS = 1.0 kΩ. Figure 53 shows a simplified application setup. Table 5 is giving a quick reference for the logic / analog state of the IS pin during device operation. In case a short circuit or an over temperature condition is detected, the sense output is supplying a fault signal
IIS(fault). The fault signal is reset by an input signal being LOW for t > tRESET. As long as an open load, short-to-VS
or inverse operation is detected while the device is in OFF state, the sense output also supplies the fault signal IIS(fault). The timings and logic of the IS pin is described in Figure 20. During output turning ON or OFF, the sense signal is invalid. Table 5 Truth Table for Sense Signal Input level HIGH
1)
Operation mode Normal operation
Output level
Sense output
LOW 2) for t < tRESET LOW for t > tRESET Inverse operation HIGH LOW for t < tRESET LOW for t > tRESET After short circuit to GND or HIGH or over temperature detection LOW for t < tRESET LOW for t > tRESET Short circuit to VS HIGH LOW for t < tRESET LOW for t > tRESET Open load HIGH LOW for t < tRESET LOW for t > tRESET
1) 2) 3) 4)
VOUT = VS - RDS(ON) * IL VOUT ~ GND (VOUT < VOUT(OLL)) VOUT > VS
VOUT ~ GND
IIS = (IL / kIS) + IIS(OFFSET) IIS = IIS(OFFSET) Z3) (IIS = IIS(LL)) IIS ≤ IIS(OFFSET) IIS = IIS(OFFSET) IIS = IIS(FAULT) IIS = IIS(FAULT)
Z (IIS = IIS(LL))
VOUT = VS
VOUT = VS VOUT > VOUT(OLH)4)
IIS ≤ IIS(OFFSET) IIS = IIS(OFFSET) IIS = IIS(FAULT) IIS ≤ IIS(OFFSET) IIS = IIS(OFFSET) IIS = IIS(FAULT)
HIGH: VIN = VIN(H) LOW: VIN = VIN(L) Z: High impedance Can be achieved e.g. with external pull up resistor ROL, see Figure 53.
Datasheet High current PROFETTM
19
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Functional Description
VIN IL tsIS(ON) tRESET t
90% (IIS static - IIS OFFSET) 10% (IIS static - IIS OFFSET)
Figure 20
IIS
tsIS(OFF) tsIS(LC) tsIS(LC)
t
IIS(OFFSET) t
CurrentSenseTiming.emf
Sense output timing
Figure 21 shows the current sense as a function of the load current in the power DMOS. The curves represent the minimum and maximum values for the sense current, as well as the ideal sense current, assuming an ideal kIS factor value as well as an ideal IIS(OFFSET).
10 max I IS(fault) 8 typ I IS(fault) min I IS(fault) I IS [mA] max I IS 4 typ I IS min I IS max I L(SC) 2 typ I L(SC) min I L(SC) 0 0
Figure 21
PD[ , ,6
, ,6 >P$@
6
W\S , ,6 PLQ , ,6
PD[ , ,6 2))6(7
W\S , ,6 2))6(7
20 40 60 I L [A] 80 100
PLQ , ,6 2))6(7
, / >$@
Sense current as a function of the load current (VSIS > 3V)
The sense current can be calculated out of the load current by the following Equation (4):
1 I IS = -- × I L + I IS ( OFFSET ) k IS
(4)
Or, vice versa, the load current can be calculated out of the sense current by following Equation (5):
I L = k IS × ( I IS – I IS ( OFFSET ) )
(5)
Datasheet High current PROFETTM
20
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Functional Description For definition of kIS, the following Equation (6) is used:
I L1 – IL2 k IS = -------------------------------------------I IS ( IL1 ) – IIS ( I L2 ) IL1 and IL2 are two different load currents, IIS(IL1) and IIS(IL2) are the corresponding sense currents.
(6)
5.4.2
Enhancing Accuracy of the Sense Output by End of Line Calibration
For some applications it may be necessary to measure the load current with very high accuracy. To increase the device accuracy, different methods can be used, e.g. single point calibration or dual point calibration. The variance of the sense current at a certain load current depends on the variance of the factor kIS as well as on the variance of the offset current IIS(OFFSET). The temperature variance of the factor kIS over the temperature range is described with the parameter ∆kIS,Temp.
∆ k IS ( Temp ) = max [ k IS ( – 40 ° C ) – k IS ( 25 ° C ) ; k IS ( 150 ° C ) – k IS ( 25 ° C ) ]
(7)
The variance of the sense current offset over the temperature range is defined as shown in Equation (8):
∆ I IS ( OFFSET ) = max [
I IS ( OFFSET ) ( – 40 ° C ) – I IS ( OFFSET ) ( 25 ° C ) ; I IS ( OFFSET ) ( 150 ° C ) – I IS ( OFFSET ) ( 25 ° C ) ]
(8)
5.4.3
Short-to-Battery detection / Open Load Detection in OFF state
The BTS50060-1TEA provides open load diagnosis in OFF state. This is achieved by monitoring the OUT voltage. The open load at OFF diagnosis is activated if VIN = LOW for t > tRESET. An open load or short-to-battery is detected if VOUT > VOUT(OLH). To provoke this condition during Open Load, it may be necessary to use an external pull up resistor ROL (see Figure 53). In case of detecting a shorted load to battery, open load, or inverse operation in OFF state, the pin IS provides a defined fault current IIS(fault). If VOUT drops below VOUT(OLL), or VIN is set to HIGH, the fault signal is removed. Figure 22 shows the behavior of the open load at OFF diagnosis. Figure 51 and Figure 52 provide the typical behavior of VOUT(OLH) and VOUT(OLL) as a function of the supply voltage and junction temperature. The device internally connects OUT with GND pin with an effective resistor ROUT(GND). In case the application provides high leakage current outside of the BTS50060-1TEA between Vs and OUT, it may be necessary to use an external resistor RL_OL to disable open load detection. Figure 53 gives an example of external circuitry for enabling / disabling open load detection in OFF state.
Datasheet High current PROFETTM
21
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Functional Description
VOUT VOUT(OLH) VOUT(OLL)
∆VOUT(OL) t
IIS IIS(FAULT) IIS(LL)
Figure 22 Open load detection in OFF state
t
OpenLoad _at_OFF.emf
5.5
Undervoltage Shutdown & Restart
The BTS50060-1TEA switches OFF whenever VS drops below VS(UV)OFF. The device restarts automatically after the supply voltage increases to a sufficient level (VS > VS(UV)ON) and a delay time of tdelay(UV), if the input pin IN is HIGH. Please see Figure 23 for details. The fault signal is reset if VS is below VS(UV) for more than typ. 70µs.
VIN HIGH VS VS(UV)ON VS(UV)OFF t
∆V S(UV) t
VOUT ON Z
Figure 23 Undervoltage shutdown and restart
tdelay(UV) t
Undervoltage .emf
Datasheet High current PROFETTM
22
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA
6
6.1
Table 6
Electrical Characteristics BTS50060-1TEA
Electrical Characteristics Table
Electrical Characteristics: BTS50060-1TEA
(unless otherwise specified) Parameter Operating currents Standby current for whole device with load Tj = 25°C
VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin
Symbol Min. Values Typ. 5 Max. 8 µA Unit Note / Test Condition Number
IS(OFF)_251)
–
Standby current for whole device with load Tj = 85°C
IS(OFF)_851)
–
5
8
µA
Standby current for whole device with load Tj = 150°C
IS(OFF)_150
–
20
60
µA
Ground current during ON Supply current during open load detection in OFF state Power stage On-State Resistance
IGND(ON) IS(OL)1)
– –
3 12
5 15
mA mA
VIN = LOW for t > tRESET, VS = 13.5V, Tj = 25°C VOUT < VOUT(OLL) VIN = LOW for t > tRESET, VS = 13.5V, Tj = 85°C VOUT < VOUT(OLL) VIN = LOW for t > tRESET, VS = 13.5V, Tj = 150°C VOUT < VOUT(OLL), VIN = HIGH t > tON VIN = LOW for t > tRESET, VOUT > VOUT(OLH) VIN = HIGH, Tj = 25 °C, VS = 13.5V, IL = +/-13.5A VIN = HIGH, Tj = 150 °C, VS = 13.5V, IL = +/-13.5A VIN = HIGH, Tj = 25 °C, VS = 8V, IL = +/-13.5A VIN = HIGH, Tj = 150 °C, VS = 8V, IL = +/-13.5A
P_6.1
P_6.2
P_6.3
P_6.4 P_6.5
RDS(ON)_251)
–
6.8
–
mΩ
P_6.6
On-State Resistance
RDS(ON)_150
–
10
12
mΩ
P_6.7
On-State Resistance
RDS(8V)_251)
–
8
–
mΩ
P_6.8
On-State Resistance
RDS(8V)_1501)
–
11.5
15
mΩ
P_6.9
Datasheet High current PROFETTM
23
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA Table 6 Electrical Characteristics: BTS50060-1TEA (cont’d)
VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter On-State Resistance at low supply voltage Symbol Min. Values Typ. 10.5 Max. – mΩ
1)
Unit
Note / Test Condition
Number P_6.10
RDS(UV)_25
–
On-State Resistance at low supply voltage
RDS(UV)_150
–
19
25
mΩ
Body diode forward voltage drop2)
-VSD(rev)1)
300
600
1000
mV
VIN = HIGH, Tj = 25 °C, VS = 4.7V, IL = +/-13.5A VIN = HIGH, Tj = 150 °C, VS = 4.7V, IL = +/-13.5A VIN = LOW, IL = -13.5A
(see Figure 12 and Figure 16)
P_6.11
P_6.12
Output leakage current3)
IL(OFF)_251)
–
0.1
1
µA
Output leakage current
IL(OFF)_851)
–
0.1
1
µA
Output leakage current
IL(OFF)_150
–
1
60
µA
Tj = 25°C, VIN = LOW, VOUT = 0V Tj = 85°C, VIN = LOW, VOUT = 0V Tj = 150°C, VIN = LOW, VOUT = 0V RL = 1Ω, VS = 13.5V
(see Figure 10 for definitions and Figure 29 to Figure 35 for parameter dependencies)
P_6.13
P_6.14
P_6.15
Switching a resistive load Slew rate 30% to 70% VS Slew rate 70% to 30% VS Slew rate matching (dV/dt)ON - |(dV/dt)OFF| Turn ON time to 90% VS Turn OFF time to 10% VS Turn ON/OFF matching Turn ON rise time 10% to 90% VS Turn OFF fall time 90% to 10% VS Switch ON energy Switch OFF energy Switching an inductive load Output voltage drop limitation4)
(dV/dt)ON -(dV/dt)OFF ∆dV/dt tON tOFF tON-tOFF tr tf EON1) EOFF1) VSD(CL)_251)
0.12 0.12 -0.15 – – -70 30 30 1.1 1.1 32 40
0.18 0.18 80 100 -20 60 60 2.4 2.4 40 48
0.36 0.36 0.15 130 150 30 90 90 3.6 3.6 – –
V/µs V/µs V/µs µs µs µs µs µs mJ mJ V V
P_6.16 P_6.17 P_6.18 P_6.19 P_6.20 P_6.21 P_6.22 P_6.23 P_6.24 P_6.25
Output voltage drop limitation VSD(CL)_1501) Input circuitry
Tj = 25°C, IL = 40mA, Tj = 150°C, IL = 13.5A,
P_6.26 P_6.27
Datasheet High current PROFETTM
24
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA Table 6 Electrical Characteristics: BTS50060-1TEA (cont’d)
VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter LOW level input voltage HIGH level input voltage Input voltage hysteresis Input pull down resistor Protection Short circuit shutdown threshold Short circuit shutdown threshold at low supply voltage Thermal shutdown temperature Latch reset time Symbol Min. Values Typ. – – 200 100 75 – Max. 0.8 6 – 200 95 V V mV kΩ A A -0.3 2.0 – 50 60 10 Unit Note / Test Condition – – – – 8V < VS < 19V 4.7V < VS < 8V Number P_6.28 P_6.29 P_6.30 P_6.31 P_6.32 P_6.33
VIN(L) VIN(H) ∆VIN1) RIN IL(SC) IL(SC)LV1)
IL(SC)
2001) 80 1.0
Tjt tRESET1)
150 40 0
1751) 55 0.5
°C ms mA
–
P_6.34 P_6.35 P_6.40
VIN = LOW 6V < VS < 28V VS = VS(EXT),
GND pin disconnected
Output leakage current while IOUT(GND)1) GND disconnected5) Over voltage protection of logic IC Sense Output Sense current steepness (reciprocal)
VZ(IC)
45
50
–
V
IGND = 5mA
P_6.41
kIS ∆kIS(Temp)1) IIS(L1) IIS(OFFSET) ∆IIS(OFFSET) IIS(LL)
10.5 -2 0.95 50 -100 0
13 0 1.28 240 0 0.1
15 +2 1.88 600 100 1
k % mA µA µA µA
see Equation (6) P_6.42
kIS temperature variance
Sense current IL = IL1 Sense current offset Sense current offset temperature variance Leakage Current at sense output Fault signal current at sense output Current sense settling time for turn ON to 90% IIS Current sense settling time for turn OFF to 10% IIS Current sense settling time matching
IL1 = 13.5A, IL2 = 0A, VS - VIS > 3V IL = 13.5A, VS - VIS > 3V VS - VIS > 3V
P_6.43 P_6.44 P_6.46
see Equation (8) P_6.47
1)
VIN = LOW for t > tRESET, VOUT < VOUT(OLL)
6)
P_6.48
IIS(fault) tsIS(ON)1) tsIS(OFF)1) tsIS(ON)tsIS(OFF)1)
6.5 0 0 -70
7.5 90 110 -20
9 300 300 30
mA µs µs µs
P_6.49 P_6.50 P_6.51 P_6.52
VS - VIS > 3V VS = 13.5V, RL = 1.0Ω, RIS = 1.0kΩ, CSENSE < 100pF,
See Figure 20
Datasheet High current PROFETTM
25
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA Table 6 Electrical Characteristics: BTS50060-1TEA (cont’d)
VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter Current sense settling time after changes of the load current IL Symbol Min. Values Typ. 1 Max. 2 µs 0 Unit Note / Test Condition Number P_6.53
t
1) sIS(LC)
VIN = HIGH, IL = 1A ↔ 50A RIS = 1.0kΩ, CSENSE < 100pF,
See Figure 20
Turn ON current sense tsIS(FAULT) settling time to IIS(fault) in case of short circuit Open load at OFF Output voltage threshold for open load detection in OFF state
1)
0
100
250
µs
RIS = 1.0kΩ, CSENSE < 100pF,
See Figure 15
P_6.54
VOUT(OLH)
5
5.5
6
V
VIN = LOW, for t > tRESET, VS = 13.5V,
see Figure 22, Figure 51 and Figure 52
P_6.55
Output voltage threshold for VOUT(OLL) resetting open load detection in OFF state Output voltage hysteresis for ∆VOUT(OL)1) open load detection in OFF state Intrinsic output pull-down resistance
4.5
5
5.5
V
P_6.56
–
500
–
mV
P_6.57
ROUT(GND)1)
–
150
–
kΩ
VOUT = 4.5V, VIN = LOW, for t > tRESET VS increasing, VIN = HIGH VS decreasing, VIN = HIGH VS(UV)ON VS(UV)OFF, VIN = HIGH VIN = HIGH
P_6.63
Undervoltage shutdown and restart Undervoltage turn ON voltage VS(UV)ON Undervoltage turn OFF voltage Undervoltage turn ON/OFF hysteresis Undervoltage restart delay time
1) 2) 3) 4) 5) 6)
– – –
4.4 4.1 0.25
4.7 4.4 –
V V V
P_6.58 P_6.59 P_6.60
VS(UV)OFF
∆VS(UV)1)
tdelay(UV)
4
6
8
ms
P_6.61
Not subject to production test, specified by design Please note - during ON state, the output voltage drop in inverse current operation is defined by VSD(rev) = RDS(ON) x IL See Figure 27 for typical temperature dependency. See Figure 36 for typical temperature dependency. All pins disconnected except for VS and OUT Valid after over temperature or short ciruit to ground until reset (t > tRESET, VIN = LOW, or undervoltage detection) or during detection of open load in OFF state.
Datasheet High current PROFETTM
26
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA
6.2 6.2.1
Parameter Dependencies Power Stage
5 '6 21 >P2KP@ 7 M >&@ 9V
Figure 24
, 6 2)) >$@
9V 9 7 M >&@
9
Typical standby current IS(OFF) as a Figure 25 function of the junction temperature Tj VS = 13.5V, VIN = LOW for t > tRESET
Typical ON state resistance RDS(ON) as a function of the junction temperature Tj VS = 13.5V, IL = 13.5A, VIN = HIGH
12 10 8 6 4 2 0 0 5 10 15 20 V S [V] 25 30 , / 2)) >$@
7 M >&@
R DS(ON) [mOhm]
Figure 26
Typical ON state resistance RDS(ON) as a Figure 27 function of the supply voltage VS Tj = 25°C, IL = 13.5A, VIN = HIGH 27
Typ. output leakage current IL(OFF) as a function of the junction temperature Tj VS = 13.5V, VIN = LOW Rev. 1.1, 2011-04-13
Datasheet High current PROFETTM
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA
G9GW >9V@ 9 6' UHY >9@ 7 M >&@ 9 6 >9@ G9GWB2))
G9GWB21
Figure 29
Figure 28
Typical body diode forward voltage drop -VSD(rev) as a function of the junction temperature Tj IL = -4A, VIN = LOW
Typical slew rate (dV/dt)ON and (dV/dt)OFF as a function of the supply voltage VS Tj = 25°C, RL = 1Ω
W >V@ W >V@ WB21
Figure 30
7 M >&@ WB2))
Figure 31
5 / >Ω@ WB21
WB2))
Typical turn ON time tON and turn OFF time tOFF as a function of the junction temperature Tj VS = 13.5V, RL = 1Ω
Typical turn ON time tON and turn OFF time tOFF as a function of the load resistance RL VS = 13.5V, Tj = 25°C
Datasheet High current PROFETTM
28
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA
9 6 >9@ WB2)) ( >P-@ W >V@
(B21
Figure 33
7 M >&@ (B2))
WB21
Figure 32
Typical turn ON time tON and turn OFF time tOFF as a function of the supply voltage VS Tj = 25°C, RL = 1Ω
Typical switch ON energy EON and switch OFF energy EOFF as a function of the junction temperature Tj VS = 13.5V, RL = 1Ω
( >P-@
( >P-@ 5 / >Ω@ (B21 (B2))
9 6 >9@ (B2))
(B21
Figure 34
Figure 35 Typical switch ON energy EON and switch OFF energy EOFF as a function of the load resistance RL VS = 13.5V, Tj = 25°C
Typical switch ON energy EON and switch OFF energy EOFF as a function of the supply voltage VS Tj = 25°C, RL = 1Ω
Datasheet High current PROFETTM
29
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA
9 6' &/ >9@ 7 M >&@
Figure 36
Typical output voltage drop limitation
VSD(CL) as a function of the junction temperature Tj IL = 40mA, VIN = LOW
6.2.2
Input Circuit
5 ,1 >N2KP@
Figure 37
7 M >&@
Typ. input pull down resistor RIN as a function of the junction temperature Tj 30 Rev. 1.1, 2011-04-13
Datasheet High current PROFETTM
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA
6.2.3
Protection Functions
, / 6& >$@
, / 6& >$@ 9 6 89 2))
9 6 >9@ 9V
Figure 39
7 M >&@ 9
9V 9
Figure 38
Typical short circuit shutdown threshold as a function of the supply voltage VS; Tj = 25°C
Typical short circuit shutdown threshold as a function of the junction temperature Tj; VS = 13.5V
120 100 80 I peak,SC [A] 60 40 20 0 0.1
Figure 40
1 10 dI L/dt [A/µs]
100
Typical short circuit overshooting as a function of the dISC/dt (device is in ON state when short circuit appears) Tj = 25°C 31 Rev. 1.1, 2011-04-13
Datasheet High current PROFETTM
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA
6.2.4
Diagnosis Functions
N ,6 N ,6
Figure 41
7 M >&@ 9 6 >9@
Typical sense current slope kIS as a Figure 42 function of the junction temperature Tj VS = 13.5V, IL1=13.5A, IL2=0A, VIN=HIGH
Typical sense current slope kIS as a function of the supply voltage VS Tj = 25°C, IL1=13.5A, IL2=0A, VIN = HIGH
N ,6
Figure 43
300 250 200 150 100 50 0 , / >$@ -50 0 50 T j [°C] 100 150
Typical sense current slope kIS as a Figure 44 function of the load current IL1 VS = 13.5V, Tj = 25°C, IL2=0A, VIN = HIGH
I IS(OFFSET) [µA]
Typical sense current offset IIS(OFFSET) as a function of the junction temperature Tj VS = 13.5V, VIN = HIGH Rev. 1.1, 2011-04-13
Datasheet High current PROFETTM
32
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA
9 6 >9@ I IS(LL) [µA]
0.25
0.2
, ,6 2))6(7 >$@
0.15
0.1
0.05
0 -50
Figure 46
0
50 T j [°C]
100
150
Figure 45
Typical sense current offset IIS(OFFSET) as a function of the supply voltage VS Tj = 25°C, VIN = HIGH
Typical leakage current IIS(LL) at the sense output as a function of the junction temperature Tj VS = 13.5V, VIN = LOW for t > tRESET
, ,6 // >$@
, ,6 >P$@ 9 6 >9@
Figure 48
9 6,6 >9@
Figure 47
Typical leakage current IIS(LL) at the sense output as a function of the supply voltage VS Tj = 25°C, VIN = LOW for t > tRESET
Typical fault current IIS(fault) at the sense output as a function of the voltage VSIS = VS - VIS VS = 13.5V, VIN = HIGH
Datasheet High current PROFETTM
33
Rev. 1.1, 2011-04-13
BTS50060-1TEA
Electrical Characteristics BTS50060-1TEA
W >V@ W >V@ 5 / >Ω@ WBV,6 2))
9 6 >9@ WBV,6 2))
WBV,6 21
Figure 49
WBV,6 21
Typical current sense settling time for Figure 50 turn ON tsIS(ON) and turn OFF tsIS(OFF) as a function of the load resistance RL VS = 13.5V, Tj = 25°C
Typical current sense settling time for turn ON tsIS(ON) and turn OFF tsIS(OFF) as a function of the supply voltage VS Tj = 25°C, RL = 1Ω
10
10
V OUT(OLL), V OUT(OLH) [V]
6
V OUT(OLL), V OUT(OLH) [V] 0 10 Vout(OLH) 20 30
8
8
6
4
4
2
2
0 V S [V]
0 -50 0 Vout(OLH)
Figure 52
50 T j [V]
100
150
Vout(OLL)
Vout(OLL)
Figure 51
Typical output voltage thresholds for open load detection during OFF VOUT(OLH) and VOUT(OLL) as a function of the supply voltage VS Tj = 25°C
Typical output voltage thresholds for open load detection during OFF VOUT(OLH) and VOUT(OLL) as a function of the junction temperature Tj VS = 13.5V Rev. 1.1, 2011-04-13
Datasheet High current PROFETTM
34
BTS50060-1TEA
Application Information
7
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.
Vbat +5V R INPUT µC e.g. XC866 10k R SENSE 10k GND R IS 1k R OL 3k3 OUT IS GND R L_OL RL 33k
application_example_OL.emf
T1
IN
VS
Figure 53
Vbat +5V
Application Diagram with exernal circuitry supporting open load detection in OFF state
R INPUT µC e.g. XC866 10k R SENSE 10k GND R IS 1k
IN
VS OUT
IS
GND
RL
application_example.emf
Figure 54
Application Diagram without external circuitry supporting open load detection in OFF state
Note: These are very simplified examples of an application circuit. The function must be verified in the real application. Table 7 Parameter Range of typical PWM frequencies Nominal Load Current Typical Application Parameter1) Symbol Typical Values 0 Hz ... 300 Hz
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