BTS50080-1EGA

Datasheet, V1.0, April 2009 BTS50080-1EGA Smart High-Side Power Switch PROFET™ Automotive Smart High-Side Power Switch BTS50080-1EGA 1 2 2.1 2.2 3 3.1 3.2 4 4.1 4.2 4.3 4.4 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7 7.1 7.2 7.3 7.4 7.5 8 8.1 8.2 9 10 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Assignment BTS50080-1EGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching losses for resistive loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inverse Operation Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Undervoltage shutdown + restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Temperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Infineon® INTELLIGENT LATCH - fault acknowledge and latch reset . . . . . . . . . . . . . . . . . . . . . . . . Reverse Polarity Protection - ReverSaveTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Loss of Load Protection, Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis during ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis during OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7 8 9 9 10 10 10 10 11 12 14 15 16 18 18 18 19 19 20 21 21 21 22 23 23 24 26 27 28 Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Hints for PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Datasheet 2 V1.0, 2009-04-06 Smart High-Side Power Switch PROFET™ BTS50080-1EGA 1 Features • • • • • • • • • • • Overview Part of scalable product family 3.3 and 5V compatible, ground referenced CMOS compatible inputs Optimized electromagnetic compatibility (EMC) Very low standby current Stable behavior at under-voltage Secure load turn-off while device ground disconnected ReverSaveTM - Reverse battery protection without external components Inverse load current capability Infineon INTELLIGENT LATCH Green Product (RoHS compliant) AEC qualified PG-DSO-12-16 Operating voltage range Minimum power stage over-voltage protection Typical on-state resistance at Tj = 25°C Maximum on-state resistance at Tj = 150°C Typical nominal load current Minimum short circuit shutdown Threshold (SCT) Vbb(ext) VDS(CL) RDS(ON) RDS(ON) 6 .. 28V 42 V 8 mΩ 16 mΩ 13 A 80 A 10 µA IL(nom) IL(SC)high Maximum stand-by current for whole device with load for Tj ≤ 85°C Ibb(OFF) Description The BTS50080-1EGA is a single channel high-side power switch in PG-DSO-12-16 package providing embedded protective functions including ReverSaveTM and Infineon INTELLIGENT LATCH. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart power chip on chip technology. The BTS50080-1EGA has ground referenced CMOS compatible inputs. ReverSaveTM is a protection feature that causes the power transistor to switch on in case of reverse polarity. As a result, the power dissipation is reduced. Infineon INTELLIGENT LATCH ensures a latched switch-off and reporting in case of fault condition. The Infineon ENHANCED SENSE pin IS provides a sophisticated diagnostic feedback signal including current sense functionality, open load in ON-state (via sense signal) and open load and short to battery in OFF-state. Diagnostic reporting can be enabled and disabled by the DEN-Pin in ON-state and OFF-state. In OFF-state, open load detection can also be disabled by the DEN-Pin to optimize stand-by current. Type BTS50080-1EGA Datasheet Package PG-DSO-12-16 3 Marking BTS 50080A V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Overview Protective Functions • • • • • • • • • • Short circuit protection with latch Thermal shutdown with latch Infineon INTELLIGENT LATCH - reset able latch resulting from protective switch-off ReverSaveTM - Reverse battery protection by self turn on of power MOSFET Inverse load current capability - Inverse operation function Under voltage shutdown with restart Over voltage protection (including load dump) Loss of ground protection Loss of Vbb protection (with external diode for charged inductive loads) Electrostatic discharge protection (ESD) Diagnostic Functions • • • • • • Enable function for diagnosis and reporting Provides capability for muliplexing of the reporting signal from multiple devices by DEN pin. Provides analog sense signal of load current in normal operation mode Provides defined fault current signal in case of overload, over temperature and short circuit to ground Open load detection in ON-state by load current sense Open load and short to battery detection In ON-state: In OFF-State: Applications • • • • µC compatible high-side power switch with diagnostic feedback for 12 V system grounded loads All types of resistive, inductive and capacitive loads Most suitable for loads with high inrush currents, such as glow plugs, PTC heaters, or lamps Replaces electromechanical relays, fuses and discrete circuits Datasheet 4 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Block Diagram and Terms 2 2.1 Block Diagram and Terms Block Diagram control chip base chip V bb internal power supply IN voltage sensor over temperature driver logic gate control & charge pump T clamp for inductive load over current switch-off OUT DEN IS ESD protection load current sense open load detection @OFF GND Figure 1 Block Diagram Overview.emf 2.2 Terms Vbb I IN IN V IN VD EN I D EN DEN GND IG N D Te rms.e mf Ib b VBB OUT I IS IS IL Vb IS VD S or VON o r V O FF V OU T V IS RIS Figure 2 Terms Datasheet 5 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Pin Configuration 3 3.1 Pin Configuration Pin Assignment BTS50080-1EGA (top view) GND IN IS DEN NC NC 1 2 3 4 5 6 12 11 10 9 8 7 NC OUT OUT OUT OUT NC P DS O1 2 .e mf heatslug (V bb) Figure 3 Pin Configuration 3.2 Pin 1 2 3 Pin Definitions and Functions Symbol I/O Function GND IN IS I O Ground connection for control chip Input: activates power switch. Has an internal pull down resistor. Sense Output: With diagnosis enabled, provides a sense current proportional to the load current during normal operation. During open load in ON provides no current. Provides a defined fault current in case of overload, over temperature or short circuit during ON or open load or short to battery during OFF (see Table 1 “Truth Table” on Page 24) Diagnosis ENable: with high level enables diagnosis reporting and open load / short to battery detection in OFF. Resets a protective, latched switch-off by falling edge acknowledgement. Has an internal pull down resistor. Not connected Output: output to the load; pins 8 to 11 must be externally shorted together1) Supply Voltage: positive power supply for logic and output 4 DEN I 5, 6, 7, 12 NC O - 8, 9, 10, OUT 11 exposed Vbb PAD 1) Not shorting all output pins will considerably increase the on-state resistance, reduce the peak current capability, the clamping capability and decrease the current sense accuracy. Datasheet 6 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA General Product Characteristics 4 4.1 General Product Characteristics Absolute Maximum Ratings Operation outside the parameters listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Supply Voltage 4.1.1 4.1.2 4.1.3 4.1.4 Supply voltage Reverse polarity voltage Vbb -Vbb(rev) Unit Conditions Max. 0 0 0 42 16 28 42 V V V V Tj = 25 °C 2) 3) Supply voltage for short circuit protection Vbat(SC) (single pulse) Supply Voltage for Load Dump protection Vbb(LD) RI = 2 Ω 4), RL = 1 Ω td =400 ms Tj = 25 °C 2) Input Pins 4.1.5 4.1.6 4.1.7 4.1.8 4.1.9 4.1.10 4.1.11 4.1.12 Voltage at IN pin Current through IN pin Voltage at DEN pin Current through DEN pin Voltage at sense pin Current through sense pin IS Load current 6) Inductive load switch-off energy (single pulse) Inductive load switch-off energy (repetitive pulses) VIN IIN VDEN IDEN VIS IIS |IL| EAS -0.3 -2 -0.3 -2 -0.3 -10 2)5) 6 2 6 2 V mA V mA V mA A mJ 2) Output Pins VZIS 10 IL(SC) - Power Stages 125 4.1.13 EAR - 63 mJ Vbb=13.5V7), IL(0) = 50A, Tj(0) ≤ 150 °C Vbb=13.5V7)8), IL(0) = 20A, Tj(0) ≤105 °C according to EIA/JESD 22-A 114B Temperatures 4.1.14 4.1.15 4.1.16 4.1.17 Junction temperature Dynamic temperature increase while switching Storage temperature ESD susceptibility HBM IN, DEN, IS, Vbb, OUT Vbb versus OUT Tj ∆T j Tstg VESD -40 -55 150 60 150 °C K °C kV ESD Susceptibility -2 -4 2 4 1) Not subject to production test, specified by design. 2) t ≤ 2 min Datasheet 7 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA General Product Characteristics 3) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 15. 4) Vbb(LD) is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. RI is the internal resistance of the Load Dump pulse generator 5) Valid at disabled diagnosis. 6) Over current threshold switch-off is a protection feature. Protection features are not designed for continuous repetitive operation. 7) See also Chapter 5.5 . 8) Resuls from simulation of temperature swing. Not subject to production test, specified by design. Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Pos. Functional Range Parameter Symbol Min. Limit Values Max. 9 6 16 281) V V mA 4 24 59 A 2) Unit Conditions Supply Voltage 4.2.1 4.2.2 4.2.3 Supply voltage range for normal operation Vbb(nor) Extended supply voltage range for Vbb(ext) operation Operating current VIN = 0V, VDS > VDS(OL) VIN = 5V Load current range for sense functionality 1) IGND 4.2.4 IL(IS) 1.5 VDEN = 5V, VIS < 5.5V, Vbb = Vbb(nor) IIS - IIS(LH) > 30 µA, IIS(lim) > IIS, Vbb = Vbb(nor), VIN = VDEN = 5 V, VbIS > 5 V - 4.2.5 Junction temperature Tj -40 150 °C 1) Not subject to production test, specified by design 2) In extended supply voltage range, the device is functional but electrical parameters are not specified. Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table. Datasheet 8 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA General Product Characteristics 4.3 Pos. 4.3.1 4.3.1 4.3.1 1) 2) 3) 4) Thermal Resistance Parameter Junction to case 1) Control chip to case 1) Junction to ambient 1) device on PCB4) Symbol Min. Limit Values Typ. 40 27 Max. 1.7 K/W K/W K/W 2) 3) Unit Conditions Rthjc Rthj(cc)c Rthja - – Not subject to production test, specified by design Specified Rthjc value is simulated at natural convection on a cold plate setup. Ta = 25 °C. Specified Rthj(cc)c value is simulated at natural convection on a cold plate setup. Ta = 25 °C, IL = 0A. Specified Rthja value and Figure 4 are according Jedec JESD51_7 at natural convection on FR4 2s2p board. The BTS50080-1EGA was measured on a 76.2 x 114.3 x 1.6 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu) applying power losses of 1.4W at the channel. According to JESD51-5 a thermal via array under the exposed pad contacted the first inner copper layer. Ta = 25 °C. Figure 4 shows the typical transient thermal impedance of BTS50080-1EGA.  = WK-$  .:    Figure 4    VHF    W3 Transient Thermal Impedance Zth(JA)=f(tp) 4) 4.4 Pos. 4.4.1 4.4.2 Package Parameter Jedec humidity category acc. J-STD-020-D Value MSL3 Test Conditions - Jedec classification temperature acc. J-STD-020-D 260°C Datasheet 9 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Power Stages 5 5.1 Power Stages Input Circuit The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump. Figure 5 shows the input circuit of the BTS50080-1EGA. The input resistor to ground ensures that the input signal is low in case of open input pin. The zener diode protects the input circuit against ESD pulses. IN RIN GND Input.emf Figure 5 Input Circuit A high signal at the input pin causes the DMOS to switch on. 5.2 Output On-State Resistance The on-state resistance RDS(ON) depends on the supply voltage Vbb and the junction temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance. The on-state resistance in reverse polarity mode is described in Chapter 6.5. 12,5 R DS(ON) 10 mΩ 7,5 5 2,5 0 -40 Figure 6 Vbb = 13.5 V typ.  5 '621  PΩ      9 EEX Tj = 25°C W\S 0 40 80 °C 120 160 Tj Typical On-State Resistance      9 9 EE 5.3 Output Timing The power stage is designed for high side configuration (Figure 9). Datasheet 10 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Power Stages The power stage has a defined switching behavior. Defined slew rates as well as edge shaping support PWM’ing of the load while achieving lowest EMC emission at minimum switching losses. V IN VIN (H ),min V IN(L ),ma x tO N tr tO F F tf t VO U T 90% 50% 30% 10% (dV / d t) O N (dV / d t) O F F t Ib b t sta n d b y I b b(O F F ) t S witch On. e mf Figure 7 Switching a Load (resistive) 5.4 Switching losses for resistive loads Switching the device on and off may cause switching losses EON and EOFF. In case of a resistive load, the switching losses depend on the supply voltage Vbb as well as on the load current IL and the junction temperature Tj. Figure 8 shows this dependencies of the switching losses. Datasheet 11 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Power Stages E ON, 30 E OFF 25 mJ 20 15 10 5 0 0 5 typ., T j = 25°C, R L = 1Ω E ON, 100 E OFF mJ 10 typ., T j = 25°C, V bb = 13.5V E OFF To be added after final silicon available. E ON 1 E OFF E ON 0,1 10 15 20 25 V V bb 30 0,1 1 Ω 10 RL E ON, 4 E OFF mJ 3 E OFF E ON 2 1 0 -50 Figure 8 typ., V bb=13.5V, R L = 1Ω 0 50 100 °C 150 Tj Typical switching losses EON and EOFF 5.5 Output Inductive Clamp When switching off inductive loads, the output voltage VOUT drops below ground potential due to the inductive properties of the load ( -diL/dt = -vL/L ; -VOUT ≅ -VL ). Datasheet 12 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Power Stages control chip VBB base chip V bb charge pump VDS(CL) iL VOUT LOAD OUT GND OutputClamp.emf Figure 9 Output Clamp To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level. At nominal battery voltage the output is clamped to VOUT(CL). At over voltages the output is clamped to VDS(CL). See Figure 9 and Figure 10 for details. The maximum allowed load inductance is limited. V OUT Vbb ON OFF VDS(CL) t V bb VDS(CL) V OUT(CL) Vbb IL t VOUT VOUT(CL) InductiveLoad.emf Figure 10 Switching an Inductance Maximum Load Inductance While de-energizing inductive loads, energy has to be dissipated in the BTS50080-1EGA. This energy can be calculated by the following equation: – V OUT ( CL )  RL ⋅ IL  LE = ( V bb + V OUT ( CL ) ) ⋅ ------------------------------ ⋅ ln  1 + ------------------------- + I L ⋅ -----RL RL V OUT(CL)   In the event of de-energizing very low ohmic inductances (RL≈0) the following, simplified equation can be used: V DS(CL) 2 1 E = -- LI L ⋅ -----------------------------------2 V DS(CL) – V bb The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 11 for the maximum allowed energy dissipation. Datasheet 13 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Power Stages ( $6   P     Tj(0) = 150°C, Vbb = 13.5V ( $5   P      Tj(0) = 105°C, Vbb = 13.5V $          , / Figure 11 Maximum energy dissipation1) 2) $          , / Note: Clamping overrides all protection functionalities. In order to avoid device destruction resulting from inductive switch-off or over voltage the device has to be operated within the maximum ratings. 5.6 Inverse Operation Capability The BTS50080-1EGA can be operated in inverse load current condition (+VOUT > +Vbb). The device can not block the current flow during inverse mode. In ON condition a voltage drop across the activated channel of -VON(inv)=RON(inv)*(-IL) can be observed. In OFF condition a voltage drop across the intrinsic body diode of -VOFF(inv)=f(-IL) can be observed. As long as the inverse current does not exceed |-IL| ≤ |-IL(inv)| the logic will operate and report according Table 1 and the BTS50080-1EGA will be able to remain in ON mode. +V bb control chip VBB base chip V bb GND logic VON(inv) OUT + Inverse_capability.emf -I L Figure 12 Inverse current capability 1) Not subject to production test, specified by design. 2) Resuls for EAR from simulation of temperature swing. Datasheet 14 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Power Stages Note: Activation of any protection mechanism will not block the current flow. Over temperature detection and current sense is not functional during inverse mode. 5.7 Undervoltage shutdown + restart The BTS50080-1EGA is supplied by Vbb. The internal logic permanently monitors the supply voltage Vbb. In the event that the supply voltage drops below the under voltage shutdown threshold Vbb(u), the BTS50080-1EGA will switch off. If the supply voltage reaches nominal operating voltage range Vbb(ext), the BTS50080-1EGA will switch on after a delay tdelay(UV), assuming VIN=High. Protective latch is reset by undervoltage shutdown. Vbb Vbb(ext ) Vbb(u) t VOUT ON Z Figure 13 Undervoltage shutdown and restart tdelay(UV) t Undervoltage .emf Datasheet 15 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Power Stages 5.8 Electrical Characteristics: Power Stages Note: Characteristics show the deviation of parameters at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. General 5.8.1 Stand-by current Tj = -40 °C, Tj = 25 °C T j ≤ 8 5 ° C 1) Tj = 150 °C Stand-by time 1) 2) Undervoltage shutdown1) Undervoltage recovery time L-input level H-input level input hysteresis input pull down resistor On-state resistance Tj=25°C Tj=150°C Vbb=6V, Tj=25°C Vbb=6V, Tj=150°C Nominal load current 1)4) Output leakage current Output clamp during switch-off 1) Parameter Symbol Min. Limit Values Typ. Max. Unit Conditions Ibb(OFF) 6 6 8 0.5 5.7 10 100 100 10 10 100 1 6 1.0 5.5 200 µA 2) , |VIN|=|VDEN|≤0.3V3), VOUT=VIS=0V, t > tstandby, no fault condition |VIN|=|VDEN|≤0.3V, VOUT=VIS=0V 1) 5.8.2 5.8.3 5.8.4 5.8.5 5.8.6 5.8.7 5.8.8 5.8.9 tstandby Vbb(u) tdelay(UV) VIN(L) VIN(H) VIN(hys) RIN RDS(ON) -0.3 2.0 50 ms V ms V V mV kΩ mΩ Input characteristics - Output characteristics VIN=5V, IL=20A - 8 11.5 10.5 13.5 13 3 18 20 50 51 3 3.5 16 27 100 20 25 5 5 A µA V V V V mJ mJ mΩ 5.8.10 5.8.11 5.8.12 IL(nom) IL(OFF) -VOUT(CL) 16 16 5.8.13 Output clamp during over voltage VDS(CL) 42 42 5.8.14 5.8.15 5.8.16 Switch-On energy 5 95% VOUT Switch-Off energy 95 5% VOUT Inverse operation on-state resistance Tj=25°C Tj=150°C EON EOFF RON(inv) - TA = 85 °C Tj ≤ 150 °C VIN=VDEN=0V, VOUT=0V VOUT≥Vbb−VDS(CL)5), IL = 40 mA VOUT≥Vbb−VDS(CL)5), IL = 20 A 1) VDS≤Vbb -VOUT(CL)5), IL = 40 mA VDS≤Vbb -VOUT(CL)5), IL = 20 A 1) Vbb = 13.5 V, RL = 1 Ω VIN = 5 V, IL = -20 A, no protective switch-off V1.0, 2009-04-06 16 8 11.5 16 Datasheet Smart High-Side Power Switch BTS50080-1EGA Power Stages Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. 5.8.17 Parameter Inverse operation output voltage drop Tj=25°C Tj=150°C Inverse current capability1) Turn-on time to 90%VOUT Turn-off time to 10%VOUT Slew rate On 30 50% VOUT Slew rate Off 50 30% VOUT Tj = -40 °C, Tj = 25 °C Tj ≤ 85 °C1) Tj = 150 °C Symbol Min. -VOFF(inv) Limit Values Typ. Max. Unit mV Conditions VIN=0V, IL = -10 A -IL(inv) 700 400 - 900 800 A µs - 5.8.18 Timings 5.8.19 5.8.20 5.8.21 5.8.22 20 tON 250 250 0.12 0.12 0.12 0.12 500 tOFF (dV/ dt)ON -(dV/ dt)OFF 0.07 0.07 0.07 0.07 500 µs V/µs 0.21 V/µs 0.23 0.215 0.21 Vbb = 13.5 V RL = 1Ω Vbb = 13.5 V RL = 1 Ω Vbb = 13.5 V RL = 1 Ω Vbb = 13.5 V RL = 1 Ω 1) Not subject to production test, specified by design 2) In case of protective switch-off STANDBY is only reached if the fault was acknowledged while IN=LOW by DEN=HIGH LOW and tstandby expired. See also Chapter 6.4 for details. 3) Tested at VIN=VDEN=0V only 4) according JESD51_7, FR4 2s2p board, 76.2 x 114.3 x 1.6 mm, 2x70µm Cu, 2x35µm Cu. 5) See Figure 10. Datasheet 17 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Protection Functions 6 Protection Functions The BTS50080-1EGA provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 6.1 Short Circuit Protection The internal logic permanently monitors the load current IL. In the event the load current exceeds the short circuit shutdown threshold (IL>IL(SC)), the device will switch off immediately. Any protective switch off latches the output. Please refer to Figure 14 for details. The protective switch off remains latched until the fault is acknowledged and reset by a falling edge at the DEN pin. See also Chapter 6.4. VIN VDEN IL I L(SC) t t reset latch reset latch latch reset latch reset t latch I_L(SC)_detect.emf Figure 14 Shutdown by short circuit current detection Before switching on, the device is measuring the battery voltage Vbb(0). In case Vbb(0) is above Vbb(SCT), the short circuit current threshold IL(SC)high is reduced to a lower level IL(SC)low. Note: In case of a short circuit between OUT and ground, a impedance between Vbat and Vbb pin of the device (see Figure 15) may cause the device’s supply voltage to drop below Vbb(u) before short circuit shutdown threshold is reached. In that case, the device will detect an undervoltage condition and behave as described in Chapter 5.7. 6.2 Short Circuit Impedance The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. Figure 15 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance. Datasheet 18 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Protection Functions LSC 5uH Vbb IN OUT LSC RSC 15 µH 10 Applicable impedances for: V bat ≤ V bat(SC) IL(SC) = IL(SC)High f or Vbb < Vbb(SCT); I L(SC) = I L(SC)Low f or Vbb ≥ Vbb(SCT); 0 L-R.emf 10mΩ Vbat PROFET GND 5 LO AD SHORT CIRCUIT short_circuit.emf 0 10 20 30 mΩ 50 RSC Figure 15 Short circuit 6.3 Over Temperature Protection The internal logic permanently monitors the junction temperature of the output stage. In the event of an over temperature (Tj > Tjt) the output will switch off immediately. Please refer to Figure 16 for details.The protective switch off remains latched until the fault is acknowledged and reset by a falling edge at the DEN pin. See also Chapter 6.4. V IN VDEN t ϑj ϑ jt t latch reset latch reset latch latch reset t Over_Temp.emf Figure 16 Over temperature detection 6.4 Infineon® INTELLIGENT LATCH - fault acknowledge and latch reset The BTS50080-1EGA provides Infineon INTELLIGENT LATCH to avoid permanent resetting of a protective, latched switch off in PWM applications. To reset a latched protective switch off the fault has to be acknowledged by a falling edge at the DEN pin. For a reset signal it’s recommended to set the DEN signal to HIGH for 20µs before setting DEN to LOW for 20µs. Please refer to Figure for details. Datasheet 19 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Protection Functions IN t DEN over temp. / short circuit VOUT t Ibb latch reset latch reset fault_acknowledge .emf t t t Infineon INTELLIGENT LATCH - fault acknowledge and latch reset 6.5 Reverse Polarity Protection - ReverSaveTM The device can not block a current flow in reverse battery condition. In order to minimize power dissipation, the device offers ReverSaveTM functionality. Under reverse polarity condition, the output stage will be switched on, provided a sufficient gate to source voltage is generated VGS≈VGND_bb. Please refer to Figure 17 for details. -V bb control chip VBB base chip V ON(rev) V bb OUT GND -IL Figure 17 Reverse battery protection LOAD Reverse.emf Use the following formula for estimation of overall power dissipation Pdiss(rev) in reverse polarity mode. P diss(rev) ≈ R ON(rev) ⋅ I L 2 Note: No protection mechanism is active during reverse polarity. The control chip is not functional. Potentials of logic pins can become negative. Affected pins have to be protected by means of series resistors. Datasheet 20 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Protection Functions 6.6 ESD Protection All logic pins have ESD protection. Beside the output clamp for the power stage as described in Section 5.5 there is a clamp mechanism implemented for pin IS. See Figure 18 for details. V bb control chip DEN IS ESD protection IN base chip OUT GND Figure 18 Over-Voltage Protection OverVoltage .emf 6.7 Loss of Ground Protection In case of complete loss of the device ground connections the BTS50080-1EGA securely changes to or remains in OFF state, if the sense resistor RIS is higher than 500Ω. 6.8 Loss of Load Protection, Loss of Vbb Protection In case of loss of load with charged primary inductances the maximum supply voltage has to be limited. It is recommended to use a Z-diode, a varistor (VZa < 42 V) or Vbb clamping power switches with connected loads in parallel. In case of loss of Vbb connection with charged inductive loads, a current path with load current capability has to be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode or a varistor (VZb < 16 V, VZL+VD < 16 V, ). For higher clamp voltages currents through all pins have to be limited according to the maximum ratings. Please refer to Figure 19 for details. control chip VBB base chip control chip VBB base chip logic LOAD V Za OUT logic V Zb OUT LOAD VD VZL V b b_ d isco n n e ct.e mf GND GND V b b_ L o a d_ d isco n n e ct.e mf Figure 19 Loss of Vbb In case of complete loss of Vbb the BTS50080-1EGA remains in OFF state. Datasheet 21 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Protection Functions 6.9 Electrical Characteristics: Protection Functions Note: Characteristics show the deviation of parameters at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Min. Over-Load Protection 6.9.1 6.9.1 6.9.2 6.9.3 Short circuit shutdown threshold (SCT) Limit Values Typ. 150 70 22 170 1) Unit Conditions Max. 200 95 25 A A V °C - IL(SC)high 80 42 20 150 Short circuit shutdown threshold at IL(SC)low high battery voltages Supply voltage for reduced short circuit shutdown threshold1) Thermal shut down temperature VIN = 5 V Vbb(0) < Vbb(SCT) VIN = 5 V Vbb(0) > Vbb(SCT) Vbb(SCT) Tjt Reverse Battery 6.9.4 On-State resistance in case of reverse polarity Vbb=-8V, Tj=150°C 1) Vbb=-12V, Tj=150°C Over-voltage protection Sense pin RON(rev) 12 16 7 20 27 - mΩ IL = -10A, RIS = 1 kΩ Over-Voltage 6.9.5 VIS(CL) 5.5 V IIS = -2 mA 1) Not subject to production test, specified by design Datasheet 22 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50080-1EGA Diagnostic Functions 7 7.1 Diagnostic Functions Diagnosis Enable For diagnosis purposes, the BTS50080-1EGA provides an Infineon ENHANCED SENSE signal at the pin IS. In ON-State, diagnosis is allways enabled. Providing a low signal at the DEN pin will disable the reporting. In OFFstate, both, reporting and diagnosis can be disabled by a low signal at DEN pin. The pin IS will be set to tri-state mode when a low signal is provided at the DEN pin. A high signal at the DEN pin enables the reporting and the open load and short to battery diagnosis during OFF mode. A falling edge at the DEN resets a preceding latched output and reporting condition. Please see Figure 20 and Table 1 for details. Vbb Vb ,IS VBB VD S IN 1 0 1 I IS(fa u lt) 1 0 DEN IS VIS ESD protection I L> I L( SC ) I IS reporting enable current sense I L/ k IL IS & ≥1 & & open load diagnosis I L(OL) 0 1 IL OUT ϑj> ϑjT S R Q Q ≥1 V D SVbb Z Z Vbb ~Vbb IIS = IL / kILIS Z Z IIS(fault) IIS(fault) IISVbb Z >Vbb-VDS(OL) Vbb-VDS(OL) 5V and as long as IIS*RIS 5 V – IIS(lim) 3.5 6 7.5.7 Sense current under fault conditions IIS(fault) 3.5 6 10 mA VDEN = 5 V, VON < 400 mV, typ. Vb,IS > 5 V VDEN = 5 V, Vb,IS > 5 V, VON > 400 mV,typ. or VOFF