BTS50080-1TMC

Datasheet, Rev. 1.0, Aug. 2008 BTS50080-1TMC Smart High-Side Power Switch PROFET™ One Channel Automotive Power Smart High-Side Power Switch BTS50080-1TMC Table of Contents Table of Contents 1 2 2.1 2.2 3 3.1 3.2 4 4.1 4.2 5 5.1 5.2 5.3 5.3.1 5.4 6 6.1 6.2 6.3 6.4 6.5 6.6 6.7 7 7.1 8 9 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Assignment BTS50080-1TMC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Polarity Protection - Reversave™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15 16 17 18 18 18 19 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Datasheet 2 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch PROFET™ One Channel BTS50080-1TMC 1 Features • • • • • • • • • Overview Enhanced specification of load current sense Reversave™ Very low standby current Current controlled input pin Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behavior at under-voltage Green Product (RoHS compliant) AEC qualified PG-TO220-7-4 5.5 .. 38 V 39 V 16 mΩ 9.5 A 37.5 A 90 A 6 µA Vbb(on) Minimum overvoltage protection VON(CL) Maximum on-state resistance at 150°C RDS(ON) Nominal load current IL(nom) Load current (ISO) IL(ISO) Minimum current limitation IL6(SC) Maximum stand-by current for whole device with load at Tj = 25 °C Ibb(OFF) Operating voltage The BTS50080-1TMC is a one channel high-side power switch in PG-TO220-7-4 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TMC has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown. Type BTS50080-1TMC Datasheet Package PG-TO220-7-4 3 Marking S50080C Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Overview Protective Functions • • • • • • • • • • Reversave™, channel switches on in case of reverse polarity Reverse battery protection without external components Short circuit protection with latch Overload protection Multi-step current limitation Thermal shutdown with restart Overvoltage protection (including load dump) Loss of ground protection Loss of Vbb protection (with external diode for charged inductive loads) Electrostatic discharge protection (ESD) Diagnostic Functions • • Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown) Open load detection in ON-state by load current sense Applications • • • • µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads All types of resistive, inductive and capacitive loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Datasheet 4 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Block Diagram and Terms 2 2.1 Block Diagram and Terms Block Diagram logic IC voltage sensor over temperature Rbb base chip Vbb T IN ESD clamp for inductive load current limitation IIN VIS VIN IS I IS RIS driver logic gate control & charge pump load current sense OUT IL LOAD Overview .emf forward voltage drop detection Figure 1 Block Diagram 2.2 Terms Following figure shows all terms used in this data sheet. Vbb VbIN V bIS IIN Ibb VBB VON IN VIN RIN IIS V IS BTS50080-1TMC IS OUT IL VOUT RIS Terms.emf Figure 2 Terms Datasheet 5 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Pin Configuration 3 3.1 Pin Configuration Pin Assignment BTS50080-1TMC TAB Vbb OUT OUT OUT 1 2 3 4 5 6 7 OUT Vbb IN IS TO220-7.emf Figure 3 Pin Configuration 3.2 Pin 1, 2 3 4 5 Pin Definitions and Functions Symbol OUT IN Vbb IS Function Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted.1) Input; activates the power switch if shorted to ground. Supply Voltage; positive power supply voltage; tab and pin 4 are internally shorted. Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Table 1 “Truth Table” on Page 21). Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted.1) Supply Voltage; positive power supply voltage; tab and pin 4 are internally shorted. 6, 7 TAB OUT Vbb 1) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability, the clamping capability and decrease the current sense accuracy. Datasheet 6 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC General Product Characteristics 4 4.1 General Product Characteristics Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = 25°C (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Supply Voltages 4.1.1 4.1.2 4.1.3 Supply voltage (single pulse)2) Max. Unit Conditions Vbb Supply voltage for short circuit protection Vbb(SC) Vbb(LD) -16 0 – 38 30 45 V V V – – Supply Voltage for Load Dump protection3) RI = 2 Ω , RL = 1 Ω – – – – – Logic Pins 4.1.4 4.1.5 4.1.6 4.1.7 4.1.8 Voltage at input pin Current through input pin Voltage at current sense pin Current through sense pin Input voltage slew rate Load current 5) Maximum energy dissipation per channel (single pulse) 4) VbIN IIN VbIS IIS dVbIN/dt IL EAS -16 -120 -16 -120 -20 63 15 63 15 20 V mA V mA V/µs Power Stages 4.1.9 4.1.10 ILx(SC) A J – 0.4 Vbb = 12 V, IL(0) = 20 A, Tj(0) = 150°C – – Temperatures 4.1.11 4.1.12 Junction temperature Storage temperature Tj Tstg VESD -40 -55 150 150 °C °C ESD Susceptibility 4.1.13 ESD susceptibility HBM -3 3 kV according to EIA/JESD 22-A 114B 1) 2) 3) 4) Not subject to production test, specified by design. Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13. Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator. Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input path. A series resistor RIN in the input path is also required for reverse operation at Vbb ≤ -16V. See also Figure 14. 5) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Datasheet 7 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC General Product Characteristics Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Pos. 4.2.1 4.2.2 Thermal Resistance Parameter Junction to Case 1) 1) Symbol Min. Limit Values Typ. 0.7 60 33 Max. 0.8 – - Unit K/W K/W Conditions – – Junction to Ambient free air device on PCB 2) Rthjc Rthja 1) Not subject to production test, specified by design. 2) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Datasheet 8 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Power Stages 5 5.1 Power Stages Input Circuit The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump. Figure 4 shows the input circuit of the BTS50080-1TMC. The current source to Vbb ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. VbIN Rbb IIN I VZ,IN Vbb IN VIN Input.emf Figure 4 Input Circuit A high signal at the required external small signal transistor pulls the input pin to ground. A logic supply current IIN is flowing and the power DMOS switches on with a dedicated slope, which is optimized in terms of EMC emission. IIN tON tOFF t VOUT 90% 50% 25% 10% (dV/dt)ON (d V/dt)OFF t SwitchOn.emf Figure 5 Switching a Load (resistive) 5.2 Output On-State Resistance The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance. The voltage drop in reverse polarity mode is described in Section 6.3. Datasheet 9 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Power Stages  5 '621  P W\S , /  $  5 '621  P ,/ W\S  $       Figure 6     ƒ&  7M      9  9 EE Typical On-State Resistance Vbb = 12 V Tj = 25°C 9 21  W\S  9  9 21a, /     Figure 7 9 21≥9 211/  $  ,/  Typical Output Voltage Drop Limitation 5.3 Output Inductive Clamp When switching off inductive loads, the output voltage VOUT drops below ground potential due to the involved inductance ( -diL/dt = -vL/L ; -VOUT ≅ -VL ). Datasheet 10 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Power Stages V bb VBB VON IL OUT V OUT L, RL OutputClamp .emf Figure 8 Output Clamp To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level (VON(CL)). See Figure 8 and Figure 9 for details. The maximum allowed load inductance is limited. V OUT Vbb t ON OFF V OUT(CL) IL VON(CL) t InductiveLoad.emf Figure 9 Switching an Inductance 5.3.1 Maximum Load Inductance While de-energizing inductive loads, energy has to be dissipated in the BTS50080-1TMC. This energy can be calculated via the following equation: V bb – V ON ( CL ) RL ⋅ IL L = V ON ( CL ) ⋅ ------------------------------------ ⋅ ln  1 + ----------------------------------  + I L ⋅ ----  RL RL V ON(CL) – V bb E In the event of de-energizing very low ohmic inductances (RL≈0) the following, simplified equation can be used: V ON(CL) 1 = -- LI L 2 ⋅ ---------------------------------V ON(CL) – V bb 2 E The energy, which is converted into heat, is limited by the thermal design of the component. For given starting currents the maximum allowed inductance is therefore limited. See Figure 10 for the maximum allowed inductance at Vbb=12V. Datasheet 11 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Power Stages Vbb = 12 V Tj(o) ≤ 150°C /  P+     Figure 10  $  ,/ Maximum load inductance for single pulse, Tj(0) ≤ 150°C. Datasheet 12 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Power Stages 5.4 Electrical Characteristics Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Min. General 5.4.1 5.4.2 5.4.3 5.4.4 5.4.5 Operating voltage 1) Undervoltage shutdown 2) Undervoltage restart of charge pump Operating current Stand-by current Tj = -40 ... 25 °C Tj ≤120 °C2) Tj = 150 °C Input current for turn-on Input current for turn-off Limit Values Typ. Max. Unit Conditions Vbb(on) VbIN(u) Vbb(ucp) IIN Ibb(OFF) 5.5 - 2.5 4 1.4 3 3 6 38 3.5 5.5 2.2 6 6 14 V V V mA µA VIN = 0 V Tj = 25 °C – – IIN = 0 A Input characteristics 5.4.6 5.4.7 IIN(on) IIN(off) - 1.4 - 2.2 30 mA µA VbIN ≥ Vbb(ucp) - VIN – Output characteristics 5.4.8 On-state resistance Tj = 25 °C Tj = 150 °C Vbb = 5.5 V, Tj = 25 °C Vbb = 5.5 V, Tj = 150 °C 5.4.9 5.4.10 Output voltage drop limitation at small load currents Nominal load current (Tab to pin 1, 2, 6 and 7) 3) 4) ISO load current (Tab to pin 1, 2, 6 and 7) 4) 5.4.11 RDS(ON) 7 13 9.5 17 30 12 16 22 60 - mΩ VIN = 0 V, IL = 10 A, (Tab to pin 1, 2, 6 and 7) VON(NL) IL(nom) 9.5 mV A – IL(ISO) 37.5 48 - A Output clamp Inverse current output voltage drop 2) 5) (Tab to pin 1, 2, 6 and 7) Tj = 25 °C Tj = 150 °C Turn-on time to 90% VOUT VON(CL) -VON(inv) 39 42 - V mV 5.4.12 Ta = 85 °C, VON ≤ 0.5 V, Tj ≤ 150 °C Tc = 85 °C, VON ≤ 0.5 V, Tj ≤ 150 °C IL = 40 mA, Tj = 25 °C IL = -10 A, RIS = 1 kΩ - 700 300 - Timings 5.4.13 tON - 300 550 µs RL = 2.2 Ω Datasheet 13 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Power Stages Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. 5.4.14 5.4.15 5.4.16 5.4.17 Parameter Turn-off time to 10% VOUT Turn-on delay after inverse operation 2) Slew rate On 25% to 50% VOUT Slew rate Off 50% to 25% VOUT Symbol Min. Limit Values Typ. 300 1 0.2 0.2 Max. 600 0.35 0.45 µs ms V/µs V/µs Unit Conditions tOFF td(inv) (dV / dt)ON -(dV/dt)OFF RL = 2.2 Ω Vbb > VOUT, VIN(inv) = VIN(fwd) = 0V RL = 2.2 Ω RL = 2.2 Ω 1) Please mind the limitations of the embedded protection functions. See Chapter 4.1 and Chapter 6 for details. 2) Not subject to production test, specified by design 3) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 4) Not subject to production test, parameters are calculated from RDS(ON) and Rth 5) During inverse operation (IL < 0 A, VbIN > 0 V), a current through the intrinsic body diode causing a voltage drop of VON(inv) results in a delayed switch on with a time delay td(inv) after the transition from inverse to forward operation. A sense current IIS(fault) can be provided by the pin IS until standard forward operation is reached. Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Datasheet 14 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Protection Functions 6 Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 6.1 Overload Protection The load current IL is limited by the device itself in case of overload or short circuit to ground. There are multiple steps of current limitation ILx(SC) which are selected automatically depending on the voltage drop VON across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VON. Figure 11 shows the dependency for a typical device. 150 I L(SC) 125 A 100 75 50 25 0 0 10 V ON(SC) Figure 11 Typical Current Limitation typ. T j = 25°C 20 V 30 V ON 40 Depending on the severity of the short condition as well as on the battery voltage the resulting voltage drop across the device varies. Whenever the resulting voltage drop VON exceeds the short circuit detection threshold VON(SC), the device will switch off immediately and latch until being reset via the input. The VON(SC) detection functionality is activated, when VbIN > 10 V typ. and the blanking time td(SC1) expired after switch on. In the event that either the short circuit detection via VON(SC) is not activated or that the on chip temperature sensor senses overtemperature before the blanking time td(SC1) expired, the device switches off resulting from overtemperature detection. After cooling down with thermal hysteresis, the device switches on again. The device will react as during normal switch on triggered by the input signal. Please refer to Figure 12 and Figure 19 for details. Datasheet 15 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Protection Functions VON(SC) detection Overtemperature detection IIN VON V ONx > VON(SC) ILx(SC) IL tm td(SC1) Figure 12 Overload Behavior IIN t IL t t Τj t V_ON_detect .emf t thermal hysteresis t Over_Temp.emf 6.2 Short circuit impedance The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. Figure 13 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance. / 6&  9 EE 9 9 9 9 5uH Vbb IN OUT LSC R SC —+     10m Ω V bb PROFET IS SHORT CIRCUIT LO AD        PΩ  5 6& short_circuitemf . Figure 13 Short circuit Datasheet 16 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Protection Functions 6.3 Reverse Polarity Protection - Reversave™ The device can not block a current flow in reverse polarity condition. In order to minimize power dissipation, the device offers Reversave™ functionality. In reverse polarity condition the channel will be switched on provided a sufficient gate to source voltage is generated VGS ≈ VRbb. Please refer to Figure 14 for details. -Vbb IRbb Rbb Vbb RIN -I IN D IN IS Logic -IL LOAD power ground RIS -IIS signal ground Reverse.emf Figure 14 Reverse battery protection Additional power is dissipated by the integrated Rbb resistor. Use following formula for estimation of overall power dissipation Pdiss(rev) in reverse polarity mode. 2 2 P diss(rev) ≈ R ON(rev) ⋅ I L + R bb ⋅ I Rbb For reverse battery voltages up to Vbb < 16 V the pin IN or the pin IS should be low ohmic connected to signal ground. This can be achieved e.g. by using a small signal diode D in parallel to the input switch or by using a small signal MOSFET driver. For reverse battery voltages higher then Vbb = 16 V an additional resistor RIN is recommended. The overall current through Rbb should not be above 80 mA. 1 1 0.08 A -------- + ------- = ------------------------------V bb – 12 V R IN R IS Note: No protection mechanism is active during reverse polarity. The IC logic is not functional. Datasheet 17 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Protection Functions 6.4 Overvoltage Protection Beside the output clamp for the power stage as described in Section 5.3 there is a clamp mechanism implemented for all logic pins. See Figure 15 for details. Rbb VZ,IN VZ,IS Vbb IN IS Figure 15 Overvoltage Protection Logic OUT OverVoltage .emf 6.5 Loss of Ground Protection In case of complete loss of the device ground connections the BTS50080-1TMC securely changes to or remains in off state. 6.6 Loss of Vbb Protection In case of complete loss of Vbb the BTS50080-1TMC remains in off state. In case of loss of Vbb connection with charged inductive loads a current path with load current capability has to be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode, or a varistor (VZL+VD < 30 V or VZb+VD < 16 V if RIN = 0). For higher clamp voltages currents through IN and IS have to be limited to -120 mA. Please refer to Figure 16 for details. V bb Rbb Vbb Vbb R bb Vbb IN RIN IS VD RIS inductive LOAD VZL Vbb_disconnect_A .emf VZb IN IS RIN Logic Logic VD R IS inductive LOAD Vbb_disconnect_B.emf Figure 16 Loss of Vbb Datasheet 18 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Protection Functions 6.7 Electrical Characteristics Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Min. Overload Protection 6.7.1 Load current limitation1) 2) Tj = -40 °C Tj = +25 °C Tj = +150 °C Load current limitation 2) Tj = -40 °C Tj = +25 °C Tj = +150 °C Load current limitation1) 2) Tj = -40 °C Tj = +25 °C Tj = +150 °C Load current limitation 2) Tj = -40 °C Tj = +25 °C Tj = +150 °C Load current limitation1) 2) Tj = -40 °C Tj = +25 °C Tj = +150 °C Short circuit shutdown detection voltage 1) Short circuit shutdown delay after input current pos. slope3) Thermal shut down temperature Thermal hysteresis 1) Limit Values Typ. Max. Unit Conditions IL6(SC) 90 140 130 120 105 95 85 75 70 65 47 46 45 27 27 27 3.5 650 175 1) A 170 A 55 130 A 45 100 A 28 70 A 15 40 4.5 1200 V µs °C K VON = 6 V, (Tab to pin 1, 2, 6 and 7) VON = 12 V, tm = 170 µs, (Tab to pin 1, 2, 6 and 7) 6.7.2 IL12(SC) 6.7.3 IL18(SC) VON = 18 V, (Tab to pin 1, 2, 6 and 7) VON = 24 V, tm = 170 µs, (Tab to pin 1, 2, 6 and 7) 6.7.4 IL24(SC) 6.7.5 IL36(SC) VON = 36 V, (Tab to pin 1, 2, 6 and 7) VbIN > 10 V typ., Tj = 25 °C VON > VON(SC) - 6.7.6 6.7.7 6.7.8 6.7.9 VON(SC) td(SC1) Tj(SC) ∆ Tj 2.5 350 150 - 10 Reverse Polarity 6.7.10 On-State resistance in case of reverse polarity Vbb = -8 V, Tj =25 °C 1) Vbb = -8 V, Tj =150 °C 1) Vbb = -12 V, Tj =25 °C Vbb = -12 V, Tj =150 °C Integrated resistor in Vbb line Over-voltage protection Input pin Sense pin RON(rev) 8.5 13 8 13 100 18 19 150 mΩ VIN = 0 V, IL = -10 A, RIS = 1 kΩ, (pin 1, 2, 6 and 7 to TAB) 6.7.11 Rbb VZ VZ,IN VZ,IS - Ω V Tj = 25 °C Ibb = 15 mA Overvoltage 6.7.12 63 63 67 67 V V 1) Not subject to production test, specified by design Datasheet 19 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Protection Functions 2) Short circuit current limit for max. duration of td(SC1), prior to shutdown, see also Figure 12. 3) min. value valid only if input “off-signal” time exceeds 30 µs Datasheet 20 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Diagnosis 7 Diagnosis For diagnosis purpose, the BTS50080-1TMC provides an enhanced sense signal at the pin IS. The pin IS provides during normal operation a sense current, which is proportional to the load current as long as VbIS > 5 V. The ratio of the output current is defined as kILIS = IL/IIS. During switch-on no current is provided, until the forward voltage drops below VON < 1 V typ. The output sense current is limited to IIS(lim). The pin IS provides in case of any fault conditions a defined fault current IIS(fault) as long as VbIS > 8 V. Fault conditions are overcurrent (VON > 1 V typ.), current limit or overtemperature switch off. The pin IS provides no current during open load in ON and de-energisation of inductive loads. Vb,IS Vbb R bb IIS I IS(fault) IS VIS Figure 17 Table 1 Parameter Normal operation Overload Short circuit to GND Overtemperature Short circuit to Vbb Open load Block Diagram: Diagnosis Truth Table Input Current Level L H1) L H L H L H L H L H 1) VZ,IS R IS Sense.emf Output Level L H L H L L L L H H Z1) H Current Sense IIS ≈ 0 (IIS(LL)) nominal IIS(fault) ≈ 0 (IIS(LL)) IIS(fault) ≈ 0 (IIS(LL)) IIS(fault) ≈ 0 (IIS(LL)) ≈ 0 (IIS(LL)) < nominal2) ≈ 0 (IIS(LL)) ≈ 0 (IIS(LH)) 1) H = “High” Level, L = “Low” Level, Z = high impedance, potential depends on external circuit 2) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS. The accuracy of the provided current sense ratio (kILIS = IL / IIS) depends on the load current. Please refer to Figure 18 for details. A typical resistor RIS of 1 kΩ is recommended. Datasheet 21 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Diagnosis  N ,/,6       Figure 18 Current sense ratio kILIS1) PD[ W\S PLQ $        ,/ Details about timings between the diagnosis signal IIS, the forward voltage drop VON and the load current IL in ONstate can be found in Figure 19. Note: During operation at low load current and at activated forward voltage drop limitation the “two level control” of VON(NL) can cause a sense current ripple synchronous to the “two level control” of VON(NL) . The ripple frequency increases at reduced load currents. IIN VON normal operation VON1V typ. t I IN VON short VON>VON(SC) over-temperature VON 1 V, typ. IIN = 0 VIN = 0, IL ≤ 0 IL = 0 20 A IL = 10 20 A IIS(LL) Current sense offset current IIS(LH) Current sense settling time to 90% tson(IS) IIS_stat. 1) Current sense settling time to 90% tslc(IS) IIS_stat. 1) Fault-Sense signal delay after input tdelay(fault) current positive slope VON > 1 V, typ. 1) Not subject to production test, specified by design Datasheet 23 Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Package Outlines 8 Package Outlines 4.4 10 ±0.2 0...0.3 8.5 1) A 1.27 ±0.1 B 0.05 2.4 0.1 1±0.3 (13.85) 9.25 ±0.2 7.551) 0...0.15 7 x 0.6 ±0.1 6 x 1.27 0.25 M 3.6 ±0.3 2.1±0.3 0.5 ±0.1 AB 8˚MAX. 0.1 B 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Figure 20 PG-TO220-7-4 Green Product To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Packages”: http://www.infineon.com/packages. Datasheet 24 Dimensions in mm Rev. 1.0, 2008-08-22 Smart High-Side Power Switch BTS50080-1TMC Revision History 9 Version Datasheet Rev. 1.0 Revision History Date 2008-08-22 Changes Initial version of datasheet Datasheet 25 Rev. 1.0, 2008-08-22 Edition 2008-08-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. 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