BTS5230GS

D a t a S h e e t , V 2 .0 , J u n e 2 0 0 5 BTS 5230GS Smart High-Side Power Switch PROFET Two Channels, 140 m Ω Automotive Power Never stop thinking. Smart High-Side Power Switch BTS 5230GS Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 Pin Assignment BTS 5230GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5 Package Outlines BTS 5230GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Data Sheet 2 V2.0, 2005-06-13 Smart High-Side Power Switch PROFET BTS 5230GS Product Summary The BTS 5230GS is a dual channel high-side power switch in P-DSO-14-18 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Operating voltage Over voltage protection On-State resistance Nominal load current (one channel active) Current limitation Current limitation repetitive Standby current for whole device with load P-DSO-14-18 Vbb(on) Vbb(AZ) RDS(ON) 4.5 .. 28 V 41 V 140 mΩ 1.8 A 8A 3A 2.5 µA IL(nom) IL(LIM) IL(SCr) Ibb(OFF) Basic Features • • • • • • • Very low standby current 3.3 V and 5 V compatible logic pins Improved electromagnetic compatibility (EMC) Stable behaviour at undervoltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected Optimized inverse current capability Type BTS 5230GS Data Sheet Ordering Code Q67065-S6135 3 Package P-DSO-14-18 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Protective Functions • • • • • • • • • Reverse battery protection without external components (GND resistor integrated) Short circuit protection Overload protection Multi-step current limitation Thermal shutdown with restart Thermal restart at reduced current limitation Overvoltage protection without external resistor Loss of ground protection Electrostatic discharge protection (ESD) Diagnostic Functions • • • • • Enable function for diagnosis pins (IS1 and IS2) Proportional load current sense signal by current source Open load detection in ON-state by load current sense Open load detection in OFF-state by voltage source Feedback on over temperature and current limitation in ON-state Applications • µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads • All types of resistive, inductive and capacitve loads • Suitable for loads with high inrush currents, so as lamps • Suitable for loads with low currents, so as LEDs • Replaces electromechanical relays, fuses and discrete circuits Data Sheet 4 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Overview 1 Overview The BTS 5230GS is a dual channel high-side power switch (two times 140 mΩ) in P-DSO-14-18 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function and open load in off state. The diagnosis signals can be switched on and off by the sense enable pin SEN. An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology. 1.1 Block Diagram channel 1 VBB load current sense clamp for inductive load internal power supply logic IN1 IS1 SEN ESD protection gate control & charge pump open load detection temperature sensor multi step load current limitation OUT1 channel 2 IN2 IS2 control and protection circuit equivalent to channel 1 OUT2 RGND GND Figure 1 Block Diagram Data Sheet 5 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Overview 1.2 Terms Following figure shows all terms used in this data sheet. Vbb IIN1 VIN1 VIN2 VIS1 VIS2 IIN2 IIS1 IIS2 ISEN Ibb VBB I L1 V DS1 VOUT1 OUT2 I L2 V DS2 V OUT2 GND IGND Terms2ch.emf IN1 IN2 IS1 IS2 SEN OUT1 BTS 5230GS VSEN Figure 2 Terms Symbols without channel number are channel related and valid for each channel separately Data Sheet 6 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Pin Configuration 2 2.1 Pin Configuration Pin Assignment BTS 5230GS (top view) VBB GND IN1 IS1 IS2 IN2 VBB 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VBB OUT1 OUT1 OUT2 OUT2 SEN VBB Figure 3 Pin Configuration P-DSO-14-18 2.2 Pin 3 6 4 5 9 12, 13 10, 11 2 Pin Definitions and Functions Symbol IN1 IN2 IS1 IS2 SEN OUT1 OUT2 GND I/O OD I I O O I O O Function Input signal for channel 1 Input signal for channel 2 Diagnosis output signal channel 1 Diagnosis output signal channel 2 Sense Enable input for channel 1&2 Protected high-side power output channel 1 Protected high-side power output channel 2 Ground connection Positive power supply for logic supply as well as output power supply 1, 7, 8, 14 VBB Data Sheet 7 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Electrical Characteristics 3 3.1 Electrical Characteristics Maximum Ratings Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability. Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values min. Supply Voltage 3.1.1 3.1.2 Supply voltage Vbb -16 0 28 20 V V Supply voltage for full short Vbb(SC) circuit protection (single pulse) (Tj = -40°C .. 150°C) Unit Test Conditions max. L = 8 µH R = 0.2 Ω 1) 3.1.3 3.1.4 VDS Supply Voltage for Load Dump Vbb(LD) Voltage at power transistor protection - 52 40 V V RI = 2 Ω 2 ) RL = 12 Ω 3) 4) Power Stages 3.1.5 3.1.6 Load current Maximum energy dissipation single pulse Power dissipation (DC) IL EAS - IL(LIM) A 0.1 J IL(0) = 2.1 A Tj(0) = 150°C Ptot 0.9 W 5) 3.1.7 Ta = 85 °C Tj ≤ 150 °C Logic Pins 3.1.8 3.1.9 Voltage at input pin Current through input pin VIN IIN VSEN -5 -16 -2.0 -8.0 -5 -16 -2.0 -8.0 -25 10 2.0 10 2.0 10 V t ≤ 2 min mA t ≤ 2 min V 3.1.10 Voltage at sense enable pin t ≤ 2 min mA 3.1.11 Current through sense enable ISEN pin 3.1.12 Current through sense pin Data Sheet t ≤ 2 min mA V2.0, 2005-06-13 IIS 8 Smart High-Side Power Switch BTS 5230GS Electrical Characteristics Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values min. Temperatures 3.1.13 Junction Temperature 3.1.14 Dynamical temperature increase while switching 3.1.15 Storage Temperature ESD Susceptibility 3.1.16 ESD susceptibility HBM VESD IN, SEN IS OUT 1) 2) 3) Unit Test Conditions max. Tj ∆T j Tstg -40 -55 150 60 150 °C °C °C kV -1 -2 -4 1 2 4 according to EIA/JESD 22-A 114B R and L describe the complete circuit impedance including line, contact and generator impedances RI is the internal resistance of the Load Dump pulse generator Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 4) 5) Data Sheet 9 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics 4 4.1 Block Description and Electrical Characteristics Power Stages The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Output On-State Resistance The on-state resistance depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance RDS(ON). The on-state resistance in reverse polarity mode is described in Section 4.2.2. Vbb = 13.5 V Tj = 25°C 240 220 200 180 160 140 120 100 80 60 -50 -25 240 220 RDS(ON) /mΩ 0 25 50 T /°C 75 100 125 150 200 180 160 140 120 100 0 5 10 15 Vbb /V 20 25 Figure 4 RDS(ON) /mΩ Typical On-State Resistance 4.1.2 Input Circuit Figure 5 shows the input circuit of the BTS 5230GS. There is an integrated input resistor that makes external components obsolet. The current source to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. IN RIN IIN RGND GND Input.emf Figure 5 Data Sheet Input Circuit (IN1 and IN2) 10 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission. IN tON tOFF t VOUT 90% 70% 70% dV /dtON 30% 10% dV /dtON 30% t SwitchOn.emf Figure 6 Switching a Load (resistive) 4.1.3 Inductive Output Clamp When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potenial, because the inductance intends to continue driving the current. V bb VBB IL OUT V OUT L, RL OutputClamp .em GND Figure 7 Output Clamp (OUT1 and OUT2) To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited. Data Sheet 11 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics V OUT Vbb IN = 5V IN = 0V t V OUT(CL) IL t InductiveLoad.emf Figure 8 Switching an Inductance Maximum Load Inductance While demagnization of inductive loads, energy has to be dissipated in the BTS 5230GS. This energy can be calculated with following equation: V OUT(CL)  V bb  L E = ( V bb – V OUT(CL) ) ⋅ ---------------------- ⋅ ln  1 – ----------------------  + IL ⋅ -----RL RL V OUT(CL)   Following equation simplifies under the assumption of RL = 0: V bb  2 1 E = -- LI L ⋅  1 – ----------------------  2 V OUT(CL)   The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the maximum allowed energy dissipation. Vbb = 12 V 0.5 0.4 0.3 0.2 EAS /J 0.1 0.05 0.04 0.03 0.02 0.01 1 2 3 IL /A 4 5 Figure 9 Data Sheet Maximum energy dissipation single pulse, Tj,Start = 150°C 12 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics 4.1.4 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. General 4.1.1 Operating voltage typ. max. Unit Test Conditions Vbb 4.5 28 V 4.1.2 Operating current IGND one channel active two channels active Standby current for whole device with load mA 2.0 3.8 4 8 µA 1.5 2.5 2.5 10 mΩ 140 260 40 mV VIN = 4.5 V, RL = 1 2 Ω , VDS < 0.5 V VIN = 5 V 4.1.3 Ibb(OFF) Tj=85°C1) Tj = 150°C VIN = 0 V, VSEN = 0 V, Tj = 25°C, Output characteristics 4.1.4 On-State resistance per channel RDS(ON) 4.1.5 Output voltage drop VDS(NL) limitation at small load currents Nominal load current per channel one channel active two channels active Output clamp Output leakage current per channel Inverse current capability IL = 2.5 A Tj = 25 °C Tj = 150 °C IL < 0.15 A 4.1.6 IL(nom) 1.8 1.3 A Ta = 85 °C Tj ≤ 150 °C 2) 3) 4.1.7 4.1.8 4.1.9 VOUT(CL) IL(OFF) -IL(inv) -16 -13 0.1 2 -10 4 V µA A IL = 40 mA VIN = 0 V 1) Data Sheet 13 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient 2) one channel active all channels active Input characteristics 4.1.12 Input resistance 4.1.13 L-input level 4.1.14 H-input level 4.1.15 Input hysteresis 4.1.16 L-input current 4.1.17 H-input current Timings 4.1.18 Turn-on time to 90% VOUT 4.1.19 Turn-off time to 10% VOUT 4.1.20 slew rate 30% to 70% VOUT 4.1.21 slew rate 70% to 30% VOUT 1) 2) Unit Test Conditions typ. max. 1) 1) 2) Rthjc Rthja 75 71 48 K/W K/W RIN VIN(L) VIN(H) ∆VIN IIN(L) IIN(H) tON tOFF dV/ dtON -dV/ dtOFF 2.0 -0.3 2.6 3.5 5.5 1.0 5.7 kΩ V V V 1) 0.25 3 10 18 38 75 75 µA µA VIN = 0.4 V VIN = 5 V RL = 1 2 Ω , Vbb = 13.5 V RL = 1 2 Ω , Vbb = 13.5 V RL = 1 2 Ω , Vbb = 13.5 V RL = 1 2 Ω , Vbb = 13.5 V 80 100 0.1 0.1 0.3 0.26 250 250 0.5 0.5 µs µs V/µs V/µs Not subject to production test, specified by design Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air Not subject to production test, parameters are calculated from RDS(ON) and Rth 3) Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Data Sheet 14 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.2 Protection Functions The device is fully protected by embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 4.2.1 Over Load Protection The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details. IL 10 8 6 4 2 5 10 15 20 VDS CurrentLimitation.emf Figure 10 Current Limitation (minimum values) Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details. IN IL(LIM) IL(SCr) t IL t IIS t OverLoad .emf Figure 11 Shut Down by Over Temperature In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V). Data Sheet 15 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.2.2 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following fomular for estimation of total power dissipation Pdiss(rev) in reverse polarity mode. Pdiss(rev) = ∑ V bb ( V DS(rev) ⋅I L ) + -------------R GND 2 The reverse current through the intrinsic body diode has to be limited by the connected load. The current trough sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The over-temperature protection is not active during reverse polarity. 4.2.3 Over Voltage Protection In addition to the output clamp for inductive loads as described in Section 4.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated ground resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor opens and the voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry. VBB IN IS RIN ZDAZ SEN RSEN ZDESD logic RGND GND OUT V OUT OverVoltage .emf Figure 12 Over Voltage Protection 4.2.4 Loss of Ground Protection In case of complete loss of the device ground connections, but connected load ground, the BTS 5230GS securely changes to or keeps in off state. Data Sheet 16 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.2.5 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. Over Load Protection 4.2.1 4.2.2 4.2.3 4.2.4 4.2.5 Load current limitation IL(LIM) Repetitive short circuit IL(SCr) current limitation Initial short circuit shut tOFF(SC) down time Thermal shut down temperature Thermal hysteresis 8 5 3 0.5 150 170 1) Unit Test Conditions typ. max. 16 10 A A A ms °C K VDS = 7 V VDS = 14 V 1) Tj = Tj(SC) TjStart = 25 °C 1) Tj(SC) ∆Tj 10 1) Reverse Battery 4.2.6 Drain-Source diode voltage (VOUT > Vbb) Reverse current through GND pin -VDS(rev) 700 mV 4.2.7 -IGND 65 mA IL = -1.6 A, Vbb = -13.5 V, Tj = 150°C Vbb = -13.5 V 1) Ground Circuit 4.2.8 Integrated Resistor in RGND GND line 115 200 220 350 350 Ω Ω Tj < 150°C Tj = 150°C Ibb = 2 mA Over Voltage 4.2.9 Overvoltage protection Vbb(AZ) 41 47 53 V Loss of GND 4.2.10 Output current while GND disconnected IL(GND) 2 mA IIN = 0,1) 2) ISEN = 0, IIS = 0, IGND = 0 1) 2) Not subject to production test, specified by design no connection at these pins Data Sheet 17 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.3 Diagnosis For diagnosis purpose, the BTS 5230GS provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see Table 1) occures. In case of open load in off-state, VIS(fault) is fed to the diagnosis pin. S OL VBB ROL IN1 Rlim RIN1 IS1 0 1 1 0 IIS1 gate control OUT1 V IS(fault) 0 1 µC SEN RSEN IN2 Rlim RIS1 RIS2 RIN2 IS2 0 1 VOUT(OL) channel 1 gate control IIS2 IL(PD) diagnosis GND channel 2 OUT2 load Sense.emf Figure 13 Table 1 Block Diagram: Diagnosis Truth Table Input Level L (OFF-State) Output Level GND GND Z Diagnostic Output SEN = H Z Z Z SEN = L Z Z Z Z Z Z V2.0, 2005-06-13 Operation Mode Normal Operation (OFF) Short Circuit to GND Over-Temperature Short Circuit to Vbb Open Load Vbb < VOUT(OL) > VOUT(OL) 18 VIS = VIS(fault) Z VIS = VIS(fault) Data Sheet Smart High-Side Power Switch BTS 5230GS Table 1 Truth Table Input Level H (ON-State) Output Level ~Vbb < Vbb ~GND Z Diagnostic Output SEN = H SEN = L Z Z Z Z Z Z Operation Mode Normal Operation (ON) Current Limitation Short Circuit to GND Over-Temperature Short Circuit to Vbb Open Load IIS = IL / kILIS Z Z Z Vbb Vbb IIS < IL / kILIS Z L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit 4.3.1 ON-State Diagnosis The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ 3000 dummy Tj = 150°C dummy Tj = -40°C 2500 kILIS 2000 1500 1000 500 0 0.5 1 IL /A 1.5 2 2.5 Figure 14 1) Current sense ratio kILIS1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 4.3.4 (Position 4.3.6). Data Sheet 19 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS In case of over-current as well as over-temperature, the current sense signal is switched off. As a result, one threshold is enough to distinguish between normal and faulty operation. Open load and over-load can be differentiated by switching off the channel and using open-load detection in off-state. Details about timings between the diagnosis signal IIS and the output voltgage VOUT and the load current IL in ON-state can be found in Figure 15. IN OFF ON tON t V OUT t IL IIS tsIS(ON) tsIS(LC) t t SwitchOn .emf Figure 15 Timing of Diagnosis Signal in ON-state 4.3.2 OFF-State Diagnosis Details about timings between the diagnosis signal IIS and the output voltgage VOUT and the load current IL in OFF-state can be found in Figure 16. IN ON OFF t V OUT Open Load, pull-up resistor active IIS td(fault) V IS(fault) / RS pull-up resistor inactive ts(fault) t t SwitchOff.emf Figure 16 Timing of Diagnosis Signal in OFF-state For open load diagnosis in off state an external output pull-up resistor (ROL) is recommended. For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account. Data Sheet 20 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS V bb(min) – V OUT(OL,max) R OL = ----------------------------------------------------------I leakage Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage current from out to ground at BTS 5230GS. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended. 4.3.3 Sense Enable Function The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 17 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is enabled, when no signal is provided at pin SEN. SEN t IIS tsIS(SEN) tdIS(SEN) tsIS(SEN) tdIS(SEN) t SEN.emf Figure 17 Timing of Sense Enable Signal The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over-voltage. Please refer to maximum ratings on Page 8. The stand-by current of the BTS 5230GS is minimized, when both input pins (IN1 and IN2) and the sense enable pin (SEN) are on low level. Data Sheet 21 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.3.4 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. Open Load at OFF state 4.3.1 4.3.2 Open load detection threshold voltage Sense signal in case of open load Sense signal current limitation Sense signal invalid after negative input slope Fault signal settling time typ. max. Unit Test Conditions VOUT(OL) VIS(fault) 2.0 3.5 3.2 5.0 4.4 6.5 V V 4.3.3 IIS(LIM) 4 mA 4.3.4 td(fault) 1.2 ms VIN = 0 V VOUT = 12 V IIS = 1 mA VIS = 0 V VIN = 0 V VOUT = 12 V VIN = 5 V to 0 V VOUT = 12 V VIN = 0 V VOUT = 0 V to > VOUT(OL) IIS = 1 mA VIN = 5 V Tj = -40 °C 4.3.5 ts(fault) 200 µs Load Current Sense 4.3.6 Current sense ratio kILIS 500 1210 1210 1210 1220 900 1210 1210 1210 1220 5.0 1800 1490 1416 1410 1405 1650 1490 1416 1410 1405 5.9 3100 1830 1645 1600 1590 2400 1830 1645 1600 1590 7.5 5 V µA IL = 0.04 A IL = 0.34 A IL = 0.6 A IL = 1.0 A IL = 2.6 A IL = 0.04 A IL = 0.34 A IL = 0.6 A IL = 1.0 A IL = 2.6 A 4.3.7 4.3.8 Current sense voltage VIS(LIM) limitation Tj = 150 °C IIS(LH) Current sense leakage/offset current 22 IIS = 0.5 mA IL = 2.6 A VIN = 5 V IL = 0 A V2.0, 2005-06-13 Data Sheet Smart High-Side Power Switch BTS 5230GS Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. 4.3.9 Parameter Current sense leakage, while diagnosis disabled Symbol Limit Values min. typ. max. 2 µA Unit Test Conditions IIS(dis) VSEN = 0 V IL = 2.6 A VIN = 0 V to 5 V IL = 1.6 A 1) 4.3.10 Current sense settling tsIS(ON) time to IIS static ±10% after positive input slope 4.3.11 Current sense settling tsIS(LC) time to IIS static ±10% after change of load current Sense Enable 4.3.12 Input resistance 4.3.13 4.3.14 4.3.15 4.3.16 4.3.17 300 µs 50 µs VIN = 5 V IL = 0.6 A to 1 1) RSEN VSEN(L) L-input level H-input level VSEN(H) L-input current ISEN(L) ISEN(H) H-input current Current sense settling tsIS(SEN) time after positive SEN slope 2.0 -0.3 2.6 3 10 3.5 5.5 1.0 5.7 kΩ V V µA µA µs 18 38 3 75 75 25 4.3.18 Current sense tdIS(SEN) deactivation time after negative SEN slope 1) 25 µs VSEN = 0.4 V VSEN = 5 V VSEN = 0 V to 5 V VIN = 0 V VOUT > VOUT(OL) VSEN = 5 V to 0 V IL = 2 A RS = 5 k Ω 1 ) Not subject to production test, specified by design Data Sheet 23 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Package Outlines BTS 5230GS 5 Package Outlines BTS 5230GS P-DSO-14-18 (Plastic Dual Small Outline Package) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. SMD = Surface Mounted Device Data Sheet 24 Dimensions in mm V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Revision History 6 Version V2.0 Revision History Date 05-06-08 Changes initial version Data Sheet 25 2005-06-13 Smart High-Side Power Switch BTS 5230GS Revision History Data Sheet 26 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Edition 2005-06-13 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 6/13/05. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 27 2005-06-13 http://www.infineon.com Published by Infineon Technologies AG