BTS5235-2G

Data Sheet, Rev.1.1, Sep 2008 BTS5235-2G Smart High-Side Power Switch Automotive Power Smart High-Side Power Switch BTS5235-2G Table of Contents Table of Contents 1 2 2.1 3 3.1 3.2 4 4.1 5 5.1 5.1.1 5.1.2 5.1.3 5.1.4 5.2 6 6.1 6.2 6.3 6.4 6.5 7 7.1 7.2 7.3 7.4 8 9 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pin Assignment BTS5235-2G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 10 10 11 13 14 15 15 16 16 16 17 18 19 20 21 21 Package Outlines BTS5235-2G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Data Sheet 2 Rev.1.1, 2007-09-01 Smart High-Side Power Switch PROFET Two Channels, 60 mΩ BTS5235-2G 1 • • • • • • • • • Overview Very low standby current 3.3 V and 5 V compatible logic pins Improved electromagnetic compatibility (EMC) Stable behavior at under voltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected Optimized inverse current capability Green Product (RoHS compliant) AEC Qualified Basic Features PG-DSO-20-43 Product Summary The BTS5235-2G is a dual channel high-side power switch in PG-DSO-20-43 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Operating voltage Over voltage protection On-State resistance Nominal load current (one channel active) Current limitation Current limitation repetitive Standby current for whole device with load Vbb(on) Vbb(AZ) RDS(ON) 4.5 … 28 V 41 V 60 mΩ 3.3 A 23 A 6A 2.5 µA IL(nom) IL(LIM) IL(SCr) Ibb(OFF) Type BTS5235-2G Data Sheet Package PG-DSO-20-43 3 Marking BTS5235-2G Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Overview Protective Functions • • • • • • • • • Reverse battery protection without external components Short circuit protection Overload protection Multi-step current limitation Thermal shutdown with restart Thermal restart at reduced current limitation Over voltage protection without external resistor Loss of ground protection Electrostatic discharge protection (ESD) Diagnostic Functions • • • • • • • • Enhanced IntelliSense signal for each channel Enable function for diagnosis pins (IS1 and IS2) Proportional load current sense signal by current source High accuracy of current sense signal at wide load current range Open load detection in ON-state by load current sense Over load (current limitation) diagnosis in ON-state, signalling by voltage source Latched over temperature diagnosis in ON-state, signalling by voltage source Open load detection in OFF-state, signalling by voltage source Applications • • • • • µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads All types of resistive, inductive and capacitive loads Suitable for loads with high inrush currents, so as lamps Suitable for loads with low currents, so as LEDs Replaces electromechanical relays, fuses and discrete circuits Data Sheet 4 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Diagram 2 Block Diagram The BTS5235-2G is a dual channel high-side power switch (two times 60 mΩ) in PG-DSO-20-43 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function, over load and over temperature alerts in ON-state and open load alert in OFF-state. The diagnosis signals can be switched on and off by the sense enable pin SEN. An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology. channel 1 VBB load current sense clamp for inductive load internal power supply IN1 IS1 SEN ESD protection logic gate control & charge pump open load detection multi step load current limitation OUT1 temperature sensor over load detection channel 2 IN2 IS2 control and protection circuit equivalent to channel 1 OUT2 RGND GND Figure 1 Block Diagram Data Sheet 5 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Diagram 2.1 Terms Following figure shows all terms used in this data sheet. Vbb IIN1 VIN1 VIN2 VIS1 VIS2 IIN2 IIS1 IIS2 ISEN Ibb VBB I L1 V DS1 VOUT1 OUT2 I L2 V DS2 V OUT2 GND IGND Terms2ch.emf IN1 IN2 IS1 IS2 SEN OUT1 BTS5235-2G VSEN Figure 2 Terms In all tables of electrical characteristics is valid: Channel related symbols without channel number are valid for each channel separately. Data Sheet 6 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Pin Configuration 3 3.1 Pin Configuration Pin Assignment BTS5235-2G (top view) VBB nc GND IN1 IS1 IS2 IN2 SEN nc VBB 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VBB OUT1 OUT1 OUT1 VBB VBB OUT2 OUT2 OUT2 VBB Figure 3 Pin Configuration PG-DSO-20-43 3.2 Pin 4 7 5 6 8 17, 18 ,19 12, 13, 14 3 1, 10, 11, 15, 16, 20 2, 9 Pin Definitions and Functions Symbol IN1 IN2 IS1 IS2 SEN OUT1 1) OUT2 GND VBB nc 2) 1) I/O I I O O I O O – – – Function Input signal for channel 1 Input signal for channel 2 Diagnosis output signal channel 1 Diagnosis output signal channel 2 Sense Enable input for channel 1&2 Protected high-side power output channel 1 Protected high-side power output channel 2 Ground connection Positive power supply for logic supply as well as output power supply Not connected 1) All output pins of each channel have to be connected 2) All VBB pins have to be connected Data Sheet 7 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Electrical Characteristics 4 4.1 Electrical Characteristics Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values min. Supply Voltage 4.1.1 4.1.2 Supply voltage Supply voltage for full short circuit protection (single pulse) (Tj(0) = -40 °C .. 150 °C) Voltage at power transistor Supply Voltage for Load Dump protection Vbb Vbb(SC) Unit Conditions max. 28 28 V V L = 8 µH, R = 0.2 Ω 2) -16 0 4.1.3 4.1.4 VDS Vbb(LD) – – 52 41 V V RI = 2 Ω 3) RL = 6.8 Ω 4) Power Stages 4.1.5 4.1.6 Load current Maximum energy dissipation single pulse IL EAS – – IL(LIM) A mJ 110 IL(0) = 2 A 5) Tj(0) = 150 °C Vbb=13,5V Ta = 85 °C 6) Tj ≤ 150 °C 4.1.7 Power dissipation (DC) Ptot – 1.4 W Logic Pins 4.1.8 4.1.9 Voltage at input pin Current through input pin VIN IIN VSEN ISEN IIS Tj ∆T j Tstg VESD -5 -16 -2.0 -8.0 -5 -16 -2.0 -8.0 -25 -40 – -55 10 2.0 10 2.0 10 150 60 150 V t ≤ 2 min. mA t ≤ 2 min. 4.1.10 Voltage at sense enable pin 4.1.11 Current through sense enable pin 4.1.12 Current through sense pin Temperatures 4.1.13 Junction Temperature 4.1.14 Dynamic temperature increase while switching 4.1.15 Storage Temperature ESD Susceptibility 4.1.16 ESD susceptibility HBM IN, SEN IS OUT 1) Not subject to production test, specified by design. V t ≤ 2 min. mA t ≤ 2 min. mA °C °C °C kV according to EIA/JESD 22-A 114B -1 -2 -4 1 2 4 Data Sheet 8 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Electrical Characteristics 2) R and L describe the complete circuit impedance including line, contact and generator impedances 3) Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator 4) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 5) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse 6) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet 9 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics 5 5.1 Block Description and Electrical Characteristics Power Stages The power stages are built by N-channel vertical power MOSFETs (DMOS) with charge pumps. 5.1.1 Output On-State Resistance The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance. The behavior in reverse polarity mode is described in Section 6.2. Vbb = 13.5 V 160 140 RDS(ON) /mΩ 120 100 80 60 40 Tj = 25 °C 90 80 RDS(ON) /mΩ 70 60 50 40 30 -50 -25 0 25 50 75 100 125 150 T /°C 0 5 10 15 Vbb /V 20 25 Figure 4 Typical On-State Resistance 5.1.2 Input Circuit Figure 5 shows the input circuit of the BTS5235-2G. There is an integrated input resistor that makes external components obsolete. The current sink to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. IN RIN IIN RGND GND Input.emf Figure 5 Input Circuit (IN1 and IN2) Data Sheet 10 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission. IN tON tOFF t VOUT 90% 70% 70% dV /dtON 30% 10% dV /dtOFF 30% t SwitchOn.emf Figure 6 Switching a Load (resistive) 5.1.3 Inductive Output Clamp When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current. V bb VBB IL OUT V OUT L, RL OutputClamp.emf GND Figure 7 Output Clamp (OUT1 and OUT2) To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited. V OUT Vbb 0 V OUT(CL) IL t t IN = 5V IN = 0V InductiveLoad.emf Figure 8 Switching an Inductance Data Sheet 11 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS5235-2G. This energy can be calculated with following equation: V OUT(CL)  RL ⋅ IL  L E = ( V bb – V OUT(CL) ) ⋅ ---------------------- ⋅ ln  1 – ---------------------- + I L ⋅ -----RL RL V OUT(CL)  (1) This equation simplifies under the assumption of RL = 0: V bb  2 1 E = -- LI L ⋅  1 – ---------------------- 2 V OUT(CL)  (2) The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the maximum allowed energy dissipation. VBB = 13.5V 10000 1000 EAS [mJ] 100 10 1 0 2 4 6 IL [A] 8 10 12 Figure 9 Maximum Energy Dissipation Single Pulse, Tj,Start = 150 °C Data Sheet 12 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics 5.1.4 Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter General 5.1.1 Operating voltage Symbol Limit Values min. typ. – max. 28 V VIN = 4.5 V RL = 12 Ω VDS < 0.5 V VIN = 5 V Unit Test Conditions Vbb 4.5 5.1.2 Operating current one channel active all channels active 5.1.3 Standby current for whole device with load IGND – – 1.8 3.6 4.0 8.0 mA Ibb(OFF) – – – 1.5 – – 2.5 2.5 15 µA VIN = 0 V VSEN = 0 V Tj = 25 °C Tj = 85 °C1) Tj = 150 °C IL = 2.5 A Tj = 25 °C Tj = 150 °C IL < 0.25 A Ta = 85 °C Tj ≤ 150 °C 2) 3) Output Characteristics 5.1.4 On-State resistance per channel RDS(ON) – – 45 90 40 60 115 – mΩ 5.1.5 Output voltage drop limitation at small load VDS(NL) currents – mV A IL(nom) 5.1.6 Nominal load current per channel one channel active two channels active 5.1.7 Output clamp 5.1.8 Output leakage current per channel 5.1.9 Inverse current capability Input Characteristics 5.1.10 Input resistor 5.1.11 L-input level 5.1.12 H-input level 5.1.13 L-input current 5.1.14 H-input current Timings 5.1.15 Turn-on time to 90% Vbb 5.1.16 Turn-off time to 10% Vbb 3.3 2.5 -24 – – 1.8 -0.3 2.5 3 10 – – – – -20 0.1 3 3.5 – – 18 38 100 120 – – -17 6.0 – 5.5 1.0 5.7 75 75 V µA A kΩ V V µA µA VIN = 0.4 V VIN = 5 V RL = 12 Ω Vbb = 13.5 V RL = 12 Ω Vbb = 13.5 V IL = 40 mA VIN = 0 V 1) VOUT(CL) IL(OFF) -IL(inv) RIN VIN(L) VIN(H) IIN(L) IIN(H) tON tOFF 250 µs 250 µs Data Sheet 13 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter 5.1.17 slew rate 30% to 70% Vbb 5.1.18 slew rate 70% to 30% Vbb Symbol dV/ dtON -dV/ dtOFF Limit Values min. 0.1 0.1 typ. 0.25 0.25 max. 0.5 0.5 Unit Test Conditions V/µs RL = 12 Ω Vbb = 13.5 V V/µs RL = 12 Ω Vbb = 13.5 V 1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. 5.2 Pos. 5.2.1 5.2.2 Thermal Resistance Parameter Junction to Case 1) Symbol Min. Limit Values Typ. – – 48 45 Max. 35 – – – – – – Unit K/W K/W Conditions – 2) Junction to Ambient one channel active all channels active RthJC RthJA 1) Not subject to production test, specified by design. 2) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Data Sheet 14 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Protection Functions 6 Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 6.1 Over Load Protection The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details. IL 25 20 15 10 5 5 10 15 20 25 V DS CurrentLimitation.emf Figure 10 Current Limitation (minimum values) Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details. IN t IL IL(LIM) IL(SCr) tOFF(SC) t IIS t OverLoad .emf Figure 11 Shut Down by Over Temperature with Current Limitation In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V). Data Sheet 15 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Protection Functions 6.2 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation Pdiss(rev) in reverse polarity mode. P diss(rev) = all channels ∑ bb ( V DS(rev) ⋅ I L ) + ------------- V R GND 2 (3) The reverse current through the intrinsic body diode has to be limited by the connected load. The current through sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The current through the ground pin (GND) is limited internally by RGND. The over-temperature protection is not active during reverse polarity. 6.3 Over Voltage Protection In addition to the output clamp for inductive loads as described in Section 5.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated ground resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor switches on and the voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry. IN IS RIN ZDAZ VBB SEN RSEN ZDESD logic internal ground RGND GND OUT V OUT OverVoltage .emf Figure 12 Over Voltage Protection 6.4 Loss of Ground Protection In case of complete loss of the device ground connections, but connected load ground, the BTS5235-2G securely changes to or stays in off state. Data Sheet 16 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Protection Functions 6.5 Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Over Load Protection 6.5.1 Load current limitation Symbol Limit Values min. typ. max. – – – Unit Conditions IL(LIM) 23 14 3 42 28 14 A A A A ms °C K VDS = 7 V VDS = 14 V VDS = 28 V 1) 2) Tj = Tj(SC) 2) TjStart = 25 °C 2) 6.5.2 Repetitive short circuit current limitation 6.5.3 Initial short circuit shut down time 6.5.4 Thermal shut down temperature 6.5.5 Thermal hysteresis Reverse Battery 6.5.6 Drain-Source diode voltage (VOUT > Vbb) IL(SCr) tOFF(SC) Tj(SC) ∆Tj – 150 – – 6 0.5 170 2) – – – 7 – 2) -VDS(rev) 900 mV IL = -3.5 A Vbb = -13.5 V Tj = 150 °C Vbb = -13.5 V 2) 6.5.7 Reverse current through GND pin Ground Circuit 6.5.8 Integrated Resistor in GND line Over Voltage 6.5.9 Over voltage protection Loss of GND 6.5.10 Output leakage current while GND disconnected -IGND RGND Vbb(AZ) IL(GND) – 115 41 – 65 220 47 – – mA 350 Ω 53 1 V mA Ibb = 2 mA IIN = 0, ISEN = 0, IIS = 0, IGND = 0 2) 3) 1) Please note that an external forced VDS must not exceed Vbb + |VOUT(CL)| 2) Not subject to production test, specified by design 3) Pins not connected Data Sheet 17 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Diagnosis 7 Diagnosis For diagnosis purpose, the BTS5235-2G provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see Table 1) occurs. In case of a failure mode, the voltage VIS(fault) is fed to the diagnosis pin. S OL VBB ROL IN1 Rlim RIN1 IS1 0 1 IIS1 gate control OUT1 latch over temperature over load µC SEN RSEN IN2 Rlim RIS1 RIS2 RIN2 IS2 0 1 0 1 open load @ off V IS(fault) VOUT(OL) channel 1 gate control IIS2 diagnosis GND channel 2 OUT2 load Sense.emf Figure 13 Table 1 Block Diagram: Diagnosis Truth Table1) Input Level L Output Level GND GND Z Diagnostic Output SEN = H Z Z Z SEN = L Z Z Z Z Z Z Z Z Z Z Z Z Operation Mode Normal Operation (OFF) Short Circuit to GND Over Temperature Short Circuit to Vbb Open Load Normal Operation (ON) Current Limitation Short Circuit to GND Over Temperature Short Circuit to Vbb Open Load Vbb < VOUT(OL) > VOUT(OL) H ~Vbb VIS = VIS(fault) Z < Vbb ~GND Z Vbb Vbb VIS = VIS(fault) IIS = IL / kILIS VIS = VIS(fault) VIS = VIS(fault) VIS = VIS(fault) IIS < IL / kILIS Z 1) L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit Data Sheet 18 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Diagnosis 7.1 ON-State Diagnosis The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to following Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ. 8000 7000 6000 5000 kILIS 4000 3000 2000 1000 0 0.5 1 1.5 2 IL /A 2.5 3 dummy Tj = 150°C dummy Tj = -40°C 3.5 4 Figure 14 Current sense ratio kILIS1) Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in ON-state can be found in Figure 15. normal operation IN V OUT OFF ON tON t over load (current limitation) t IL IIS tsIS(ON) tsIS(LC) tsIS(OVL) VIS(fault) / RS t t SwitchOn .emf Figure 15 Timing of Diagnosis Signal in ON-state In case of over-load as well as over-temperature, the voltage VIS(fault) is fed to the diagnosis pins as long as the according input pin is high. This means, even if the overload disappears after the first thermal shutdown or when the device keeps switching on and off in over-load condition (thermal toggling), the diagnosis signal (VIS(fault)) is constantly available. Please refer to Figure 16 for details. Please note, that if the overload disappears before the first thermal shutdown, the diagnosis signal (VIS(fault)) may remain for approximately 300 µs longer than the duration of the overload. 1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 7.4 (Position 7.4.6). Data Sheet 19 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Diagnosis As a result open load and over load including over temperature can be differentiated in ON-state. Consideration must be taken in the selection of the sense resistor in order to distinguish nominal currents from the overload/short circuit fault state. A potential of 5 V at the sense pin can be achieved with a big sense resistor even with currents being much smaller than the current limitation. over load (current limitation) IN IL OFF ON IL(LIM) over temperature OFF t IIS tsIS(OVL) VIS(fault) / RS t OverLoad.emf Figure 16 Timing of Diagnosis Signal in Over Load Condition 7.2 OFF-State Diagnosis Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in OFF-state can be found in Figure 17. For open load diagnosis in OFF-state an external output pull-up resistor (ROL) is necessary. IN ON OFF t V OUT Open Load, pull-up resistor active IIS td(fault) VIS(fault) / RS pull-up resistor inactive ts(fault) t t SwitchOff.emf Figure 17 Timing of Diagnosis Signal in OFF-state For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account. V bb(min) – V OUT(OL,max) R OL = ----------------------------------------------------------I leakage (4) Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage current from out to ground at BTS5235-2G. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended. Data Sheet 20 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Diagnosis 7.3 Sense Enable Function The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 18 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is disabled, when no signal is provided at pin SEN. SEN t IIS tsIS(SEN) tdIS(SEN) tsIS(SEN) tdIS(SEN) t SEN.emf Figure 18 Timing of Sense Enable Signal The SEN pin circuit is designed equally to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over voltage. Please refer to maximum ratings on Page 8. The stand-by current of the BTS5235-2G is minimized, when both input pins (IN1 and IN2) and the sense enable pin (SEN) are on low level. 7.4 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter General Definition 7.4.1 Diagnostics signal in failure mode VIS(fault) Symbol Limit Values min. 5 typ. max. – 9 Unit Conditions V VIN = 0 V VOUT = Vbb IIS = 1 mA VIN = 0 V VOUT = Vbb 7.4.2 Diagnostics signal current limitation in failure mode Open Load at OFF-State 7.4.3 Open load detection threshold voltage IIS(LIM) 3 – – mA VOUT(OL) 1.6 – – 2.8 – – 4.4 1.2 V ms VIN = 5 V to 0 V VOUT = Vbb VIN = 0 V VOUT = 0 V to > VOUT(OL) IIS = 1 mA 7.4.4 Sense signal invalid after negative input slope td(fault) 7.4.5 Fault signal settling time ts(fault) 200 µs Data Sheet 21 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Diagnosis Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Load Current Sense ON-State 7.4.6 Current sense ratio IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A kILIS Symbol Limit Values min. – 1000 2300 2410 2465 1400 2465 2520 2580 typ. max. 2870 4035 3050 2920 2850 3410 2920 2875 2870 6.2 – – – – – 8000 3580 3380 3275 6000 3275 3220 3160 7.5 3.5 1 350 Unit Conditions VIN = 5 V Tj = -40 °C Tj = 150 °C 7.4.7 Current sense voltage limitation 7.4.8 Current sense leakage/offset current 7.4.9 Current sense leakage, while diagnosis disabled 7.4.10 Current sense settling time to IIS static ±10% after positive input slope 7.4.11 Current sense settling time to IIS static ±10% after change of load current Over Load in ON-State 7.4.12 Over load detection current VIS(LIM) IIS(LH) IIS(dis) tsIS(ON) tsIS(LC) 5.0 – – – – V µA µA µs µs IIS = 0.5 mA IL = 3.5 A VIN = 5 V IL = 0 A VSEN = 0 V IL = 3.5 A VIN = 0 V to 5 V IL = 3.5 A 1) VIN = 5 V IL = 1.3 A to 2.2 A 1) VIN = 5 V VIS = VIS(fault) VOUT = 2 V VIN = 0 V to 5 V 50 IL(OVL) 8 – IL(LIM) A 1) 7.4.13 Sense signal settling time in overload condition tsIS(OVL) Sense Enable 7.4.14 Input resistance 7.4.15 L-input level 7.4.16 H-input level 7.4.17 L-input current 7.4.18 H-input current 7.4.19 Current sense settling time RSEN VSEN(L) VSEN(H) ISEN(L) ISEN(H) tsIS(SEN) – – 200 µs 1.8 -0.3 2.5 3 10 – 3.5 – – 18 38 3 5.5 1.0 5.7 75 75 25 kΩ V V µA µA µs VSEN = 0.4 V VSEN = 5 V VSEN = 0 V to 5 V VIN = 0 V VOUT > VOUT(OL) VSEN = 5 V to 0 V IL = 3.5 A RS = 5 kΩ 1) 7.4.20 Current sense deactivation time tdIS(SEN) – – 25 µs 1) Not subject to production test, specified by design Data Sheet 22 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Package Outlines BTS5235-2G 8 Package Outlines BTS5235-2G 2.65 max 0.35 x 45˚ +0.09 2.45 -0.2 0.2 -0.1 7.6 -0.2 1) 1.27 0.35 +0.15 2) 20 0.2 24x 11 0.1 0.4 +0.8 10.3 ±0.3 GPS05094 1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side Figure 19 PG-DSO-20-43 (Plastic Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 23 0.23 8˚ ma x Dimensions in mm Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Revision History 9 Revision History Changes Modification of the Figure 9 all pages: added new Infineon logo Creation of the green data sheet. First page: Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green. Data sheet derived from the BTS5235L grey Revision 1.0: parameter 4.1.6: change to 110mJ at 12V; added conditions Vbb=13.5V changed Figure 9. parameter 4.1.7: -24V min. -17V max. Version Date Rev. 1.1 2008-09-01 Rev.1.0 2007-06-29 Data Sheet 24 Rev.1.1, 2007-09-01 Edition 2007-09-01 Published by Infineon Technologies AG 81726 Munich, Germany © 9/17/08 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.