BTS550P

PROFET® Data Sheet BTS550P Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense • Loss of Vbb protection2) • Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vbb(AZ) 62 VON(CL) 44 Vbb(on) 5.0 ... 34 RON IL(ISO) IL(SC) IL : IIS V V V 3.6 mΩ 115 A 220 A 21000 TO-218AB/5 • Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads • Replaces electromechanical relays, fuses and discrete circuits Application 5 1 Straight leads General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab Voltage source Overvoltage protection Current limit Gate protection OUT R bb + V bb 1, 5 IL Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection Current Sense Load 2 IN ESD Logic I IN Temperature sensor I IS IS  PROFET Load GND VIN V IS Logic GND 4 R IS 1) 2) With additional external diode. Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG 1 of 15 2003-Oct-01 Data Sheet BTS550P Pin 1 2 3 Symbol OUT IN Vbb O I Function Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin4). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) + 4 5 IS OUT S O Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for short circuit protection, Tj,start =-40 ...+150°C: (EAS limitation see diagram on page 9) Load current (short circuit current, see page 5) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = 20 A, ZL = 15 mH, 0 Ω, see diagrams on page 10 Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ Symbol Vbb Vbb IL VLoad dump6) Tj Tstg Ptot EAS VESD IIN IIS Values 40 34 self-limited 80 -40 ...+150 -55 ...+150 360 3 4 +15 , -250 +15 , -250 Unit V V A V °C W J kV mA Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 8 3) 4) 5) 6) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Infineon Technologies AG 2 2003-Oct-01 Data Sheet BTS550P Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min --chip - case: RthJC7) Junction - ambient (free air): RthJA Values typ max -- 0.35 30 -Unit K/W Electrical Characteristics Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement circuit page 8) IL = 20 A, Tj = 25 °C: RON VIN = 0, IL = 20 A, Tj = 150 °C: IL = 120 A, Tj = 150 °C: Vbb IL = 20 A, Tj = 150 °C: RON(Static) 9) (Tab to pins 1,5) Nominal load current IL(ISO) 10) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 °C: IL(Max) see diagram on page 12 VON = 1.8 V, Tc = 150 °C: 11) Turn-on time IIN to 90% VOUT: ton Turn-off time IIN to 10% VOUT: toff RL = 1 Ω , Tj =-40...+150°C Slew rate on 11) (10 to 30% VOUT ) dV/dton RL = 1 Ω ,Tj =25°C Slew rate off 11) (70 to 40% VOUT ) -dV/dtoff RL = 1 Ω ,Tj =25°C = 6V8), -- -90 2.8 5.0 -7 115 3.6 6.5 6.5 10 -- mΩ A 390 215 120 40 0.2 0.2 --250 90 0.5 0.6 --600 150 0.8 1 A µs V/µs V/µs 7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included! Decrease of Vbb below 10 V causes a slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C. 9) not subject to production test, specified by design 10) T is about 105°C under these conditions. J 11) See timing diagram on page 13. 8) Infineon Technologies AG 3 2003-Oct-01 Data Sheet BTS550P Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) VbIN = 12 V, IL = - 20 A Tj = 25 °C: RON(inv) see diagram on page 10 Tj = 150 °C: Nominal inverse load current (Pins 1,5 to Tab) IL(inv) 10 VON = -0.5 V, Tc = 85 °C -VON Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150°C Operating Parameters Operating voltage (VIN = 0) 8, 12) Undervoltage shutdown 13) Undervoltage start of charge pump see diagram page 14 Overvoltage protection14) Tj =-40°C: Ibb = 15 mA Tj = 25...+150°C: Standby current Tj =-40...+25°C: IIN = 0 Tj = 150°C: Vbb(on) VbIN(u) VbIN(ucp) VbIN(Z) Ibb(off) -90 -- 2.8 5.0 115 0.6 3.6 6.5 -0.7 mΩ A V 5.0 1.5 3.0 60 62 --- -3.0 4.5 -64 15 25 34 4.5 6.0 --25 50 V V V V µA 12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u). For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit. 13) V bIN = Vbb - VIN see diagram on page 8. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT ≈Vbb - 3 V. 14) See also VON(CL) in circuit diagram on page 9. Infineon Technologies AG 4 2003-Oct-01 Data Sheet BTS550P Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions15) Short circuit current limit (Tab to pins 1,5)16 VON = 12 V, time until shutdown max. 350 µs Tc =-40°C: IL(SCp) Tc =25°C: Tc =+150°C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) td(SC) min. value valid only if input "off-signal" time exceeds 30 µs 100 110 120 80 14 40 -150 -- 190 220 210 -17 44 6 -10 350 330 310 350 20 47 ---- A µs V V V °C K Output clamp 17) IL= 40 mA: -VOUT(CL) (inductive load switch off) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) VON(CL) IL= 40 mA Short circuit shutdown detection voltage (pin 3 to pins 1,5) VON(SC) Thermal overload trip temperature Tjt Thermal hysteresis ∆Tjt Reverse Battery Reverse battery voltage 18) -Vbb On-state resistance (Pins 1,5 to pin 3) Tj = 25 °C: RON(rev) Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C: Integrated resistor in Vbb line Tj=25°C: Tj=150°C: Rbb --90 105 -3.4 -110 125 32 4.3 7.5 135 150 V mΩ Ω 15) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 16 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions. 17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9. Infineon Technologies AG 5 2003-Oct-01 Data Sheet BTS550P Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Diagnostic Characteristics Current sense ratio, IL = 120 A,Tj =-40°C: kILIS static on-condition, Tj =25°C: kILIS = IL : IIS, Tj =150°C: VON < 1.5 V19), IL = 20 A,Tj =-40°C: VIS 4.0 V Tj =150°C: see diagram on page 11 IL = 12 A,Tj =-40°C: Tj =25°C: Tj =150°C: IL = 6 A,Tj =-40°C: Tj =25°C: Tj =150°C: IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): Sense current saturation Current sense leakage current IIN = 0: IIS(LL) Current sense settling time20) Overvoltage protection Ibb = 15 mA VIN = 0, IL ≤ 0: IIS(LH) ts(IS) Tj =-40°C: VbIS(Z) Tj = 25...+150°C: IIS,lim 19 000 19 000 18 000 18 500 18 500 18 000 16 000 17 000 17 500 12 000 14 000 16 000 6.5 ---60 62 20 600 20 500 19 000 22 300 21 400 19 500 23 500 22 000 19 900 28 000 24 000 20 500 --2 --64 23 000 22 500 21 500 26 000 25 000 23 000 30 000 26 500 24 500 46 000 34 000 30 000 -0.5 -500 --µs V mA µA Input Input and operating current (see diagram page 12) IIN(on) IN grounded (VIN = 0) --- 0.8 -- 1.5 80 mA µA Input current for turn-off21) IIN(off) 19) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 20) not subject to production test, specified by design 21) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than 500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Infineon Technologies AG 6 2003-Oct-01 Truth Table Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L = "Low" Level H = "High" Level L H H H L H L H L H L H L L H Output level L H H H L L L L H H Z23) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 VON(Fold back) if VON>VON(SC), shutdown will occure Options Overview Type BTS 6510P 550P 555 X X 650P Overtemperature protection with hysteresis Tj >150 °C, latch function24) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection with overtemperature shutdown switches off when VON>6 V typ. (when first turned on after approx. 180 µs) X X X X X X X Overvoltage shutdown Output negative voltage transient limit to Vbb - VON(CL) X X X to VOUT = -19 V typ X25) X25) X25) Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13) 22) 23) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. Power Transistor "OFF", potential defined by external impedance. 24) Latch except when V -V bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 25) Can be "switched off" by using a diode D (see page 8) or leaving open the current sense output. S Infineon Technologies AG 7 2003-Oct-01 Data Sheet BTS550P Terms I bb VbIN 3 Vbb IL V bb RIN V IN Current sense status output Vbb VON OUT PROFET IS VbIS 4 I IS DS VIS R IS V OUT R bb ZD V Z,IS 2 IN IS 1,5 IIS R IS VIS I IN Two or more devices can easily be connected in parallel to increase load current capability. RON measurement layout ≤ 5.5 mm VZ,IS = 64 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout VIS > 5 V. If you want to measure load currents up Vbb - 5 V . to IL(M), RIS should be less than IL(M) / Kilis Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...350 µs). + Vbb Vbb force contacts Out Force Sense contacts contacts (both out pins parallel) VON Input circuit (ESD protection) V bb OUT Logic unit Short circuit detection V V bIN ZD R bb Inductive and overvoltage output clamp + Vbb VZ1 Z,IN IN I IN VON VZG OUT V IN PROFET DS IS VOUT When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 64 V (typ). VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to Infineon Technologies AG 8 2003-Oct-01 Data Sheet BTS550P VOUT(CL) = -19 V typ. via VZG. With DS, VOUT is clamped to Vbb - VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19V referring to the OUT – potential the device will switch on, if diode DS is not used. Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a: Overvoltage protection of logic part + Vbb V R IN Z,IN V Z,IS V bb IN V bb OUT R bb PROFET IN Logic IS V OUT IS PROFET RV Signal GND V ZL R IS V Z,VIS Version b: Rbb = 120 Ω typ., VZ,IN = VZ,IS = 64 V typ., RIS = 1 kΩ nominal. Note that when overvoltage exceeds 69 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. V bb IN Vbb PROFET OUT Reverse battery protection - Vbb R bb IS V Zb IN OUT R IN Logic IS Power Transistor Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a neccessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit: DS R IS RV RL D Signal GND Power GND RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse battery protection in applications with Vbb above 1 1 1 + + = 16 V18); recommended value: RIN RIS RV 0.1A 1 0.1A if DS is not used (or = if |Vbb| - 12V RIN |Vbb| - 12V DS is used). To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV . V bb IN Vbb PROFET OUT RL IS Infineon Technologies AG 9 2003-Oct-01 Data Sheet BTS550P Inverse load current operation Vbb Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [µH] V bb + IN - IL PROFET IS OUT 100000 - V OUT + IIS - V IN V IS 10000 1000 R IS The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! 100 10 1 1 10 100 1000 IL [A] Inductive load switch-off energy dissipation E bb E AS V V bb ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL Externally adjustable current limit If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function. Vbb V bb { RIS ER Energy stored in load inductance: EL = 1/ ·L·I 2 2 L RV IN PROFET OUT While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L (V + |VOUT(CL)|) 2·RL bb IL·RL IS Rload IN Signal T1 Signal GND CV T2 R IS Power GND ln (1+ |V OUT(CL)| ) Infineon Technologies AG 10 2003-Oct-01 Data Sheet BTS550P Characteristics Current sense versus load current: IIS = f(IL) IIS [mA] 7 Current sense ratio: KILIS = f(IL), TJ = 25 °C kilis 34000 32000 30000 6 5 max 4 28000 26000 max 3 min 2 20000 24000 22000 typ 1 18000 min 0 0 20 40 60 80 100 120 16000 0 20 40 60 80 100 120 IL [A] Current sense ratio: KILIS = f(IL), TJ = -40 °C Kilis 46000 44000 42000 40000 38000 36000 34000 32000 30000 28000 26000 24000 22000 20000 18000 16000 14000 12000 0 20 40 60 80 100 120 16000 0 20 40 24000 26000 28000 IL [A] Current sense ratio: KILIS = f(IL), TJ = 150 °C Kilis 30000 max max 22000 typ min 20000 typ 18000 min 60 80 100 120 IL [A] IL [A] Infineon Technologies AG 11 2003-Oct-01 Data Sheet BTS550P Typ. current limitation characteristic IL = f (VON, Tj ) IL [A] Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN 1.6 1.4 800 700 600 500 400 300 200 100 0 0 VON(FB) 5 10 15 20 TJ = -40°C TJ = 150°C VON > V ON(SC) only for t < t d(SC) (otherwise immediate shutdown) 1.2 1.0 0.8 0.6 TJ = 25°C 0.4 0.2 0 0 20 40 60 80 VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj ); IL = 20 A; VIN = 0 RON [mOhm] 10 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 40 Tj = 150°C 85°C 25°C -40°C static dynamic IIN [mA] VbIN [V] Vbb [V] Infineon Technologies AG 12 2003-Oct-01 Data Sheet BTS550P Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2b: Switching an inductive load: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IL tslc(IS) t slc(IS) IL Load 1 Load 2 IIS IIS tson(IS) t soff(IS) t t The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3a: Short circuit: shut down by short circuit detection, reset by IIN = 0. Figure 2a: Switching motors and lamps: IIN IIN IL IL(SCp) VOUT td(SC) IIL IIS VOUT>>0 VOUT=0 IIS t t Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6). Shut down remains latched until next reset via input. Infineon Technologies AG 13 2003-Oct-01 Data Sheet BTS550P Figure 4a: Overtemperature Reset if Tj