BTS555_10

PROFET® Data Sheet BTS555 Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense • Loss of Vbb protection2) • Electrostatic discharge (ESD) protection • Green Product (RoHS compliant) • AEC qualified Features Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vbb(AZ) 62 VON(CL) 44 Vbb(on) 5.0 ... 34 RON IL(ISO) IL(SCp) IL : IIS V V V 2.5 mΩ 165 A 520 A 30 000 PG-TO218-5-146 5 1 Straight leads • Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads • Replaces electromechanical relays, fuses and discrete circuits Application General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab R Voltage source Overvoltage protection Current limit Gate protection bb + V bb Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection OUT 1, 5 IL Current Sense Load 2 IN ESD Logic I IN Temperature sensor I IS IS  PROFET Load GND VIN V IS Logic GND 4 R IS 1 2) ) With additional external diode. Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG 1 of 16 2010-June-01 Data Sheet BTS555 Pin 1 2 3 Symbol OUT IN Vbb Function Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin4). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) 4 5 IS OUT Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (see page 4 and 5) Supply voltage for full short circuit protection, (EAS limitation see diagram on page 10) Tj,start=-40°C…+150°C: Load current (short circuit current, see page 5) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI5) = 2 Ω, RL = 0.1 Ω, td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = 20 A, ZL = 15 mH, 0 Ω, see diagram on page 10 Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ Symbol Vbb Vbb IL VLoad dump6) Tj Tstg Ptot EAS VESD IIN IIS Values 40 34 self-limited 80 -40 ...+150 -55 ...+150 360 3 4.0 +15 , -250 +15 , -250 Unit V V A V °C W J kV mA Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 8 and 9 3) 4) 5) 6) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Infineon Technologies AG 2 2010-June-01 Data Sheet BTS555 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min --chip - case: RthJC7) junction - ambient (free air): RthJA Values typ max -- 0.35 30 -Unit K/W Electrical Characteristics Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement circuit page 7) IL = 30 A, Tj = 25 °C: RON VIN = 0, IL = 30 A, Tj = 150 °C: IL = 120 A, Tj = 150 °C: Vbb = 6 IL = 20 A, Tj = 150 °C: RON(Static) Nominal load current9) (Tab to pins 1,5) IL(ISO) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10) Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 °C: IL(Max) see diagram on page 13 VON = 1.8 V, Tc = 150 °C: 11) Turn-on time IIN to 90% VOUT: ton Turn-off time IIN to 10% VOUT: toff RL = 1 Ω , Tj =-40...+150°C dV/dton Slew rate on 11) (10 to 30% VOUT ) RL = 1 Ω -dV/dtoff Slew rate off 11) (70 to 40% VOUT ) RL = 1 Ω V8), ----128 1.9 3.3 -4.6 165 2.5 4.0 4.0 9.0 -- mΩ A 520 360 120 50 0.3 0.3 ----0.5 0.7 --600 200 0.8 1 A µs V/µs V/µs 7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included! Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C. 9) not subject to production test, specified by design 10) T is about 105°C under these conditions. J 11) See timing diagram on page 14. 8) Infineon Technologies AG 3 2010-June-01 Data Sheet BTS555 Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) VbIN = 12 V, IL = - 30 A Tj = 25 °C: RON(inv) see description on page 10 Tj = 150 °C: IL(inv) Nominal inverse load current (Pins 1,5 to Tab) 10 VON = -0.5 V, Tc = 85 °C -VON Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150°C Operating Parameters Operating voltage (VIN = 0) 12) Undervoltage shutdown 13) Undervoltage start of charge pump see diagram page 15 Overvoltage protection14) Tj =-40°C: Ibb = 15 mA Tj = 25...+150°C: Standby current Tj =-40...+25°C: IIN = 0 Tj = 150°C: Vbb(on) VbIN(u) VbIN(ucp) VbIN(Z) Ibb(off) -128 -- 1.9 3.3 165 0.6 2.5 4.0 -0.7 mΩ A V 5.0 1.5 3.0 60 62 --- -3.0 4.5 -66 15 25 34 4.5 6.0 --25 50 V V V V µA 12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u). For all voltages 0 ... 34 V the device provides embedded protection functions against overtemperature and short circuit. 13) V bIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT ≈Vbb - 3 V. 14) See also VON(CL) in circuit diagram on page 8. Infineon Technologies AG 4 2010-June-01 Data Sheet BTS555 Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions15) Short circuit current limit (Tab to pins 1,5)16) VON = 12 V, time until shutdown max. 300 µs Tc =-40°C: IL(SCp) Tc =25°C: Tc =+150°C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) td(SC) min. value valid only if input "off-signal" time exceeds 30 µs 200 200 300 80 14 40 -150 -- 320 400 480 -17 44 6 -10 550 620 650 300 20 47 ---- A µs V V V °C K Output clamp 17) IL= 40 mA: -VOUT(CL) (inductive load switch off) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) VON(CL) IL= 40 mA Short circuit shutdown detection voltage (pin 3 to pins 1,5) VON(SC) Thermal overload trip temperature Tjt Thermal hysteresis ∆Tjt Reverse Battery Reverse battery voltage 18) -Vbb On-state resistance (Pins 1,5 to pin 3) Tj = 25 °C: RON(rev) Vbb = -12V, VIN = 0, IL = - 30 A, RIS = 1 kΩ Tj = 150 °C: Integrated resistor in Vbb line Tj = 25 °C: Tj = 150 °C: Rbb --90 105 -2.3 3.9 110 125 16 3.0 4.7 135 150 V mΩ Ω 15) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 16 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions. 17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9. Infineon Technologies AG 5 2010-June-01 Data Sheet BTS555 Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max 25 000 26 000 24 000 25 000 25 000 23 000 24 000 24 000 23 000 23 000 23 000 23 000 29 000 28 500 26 500 31 200 30 200 27 200 33 500 31 500 27 500 40 500 40 500 29 000 34 000 32 000 29 000 40 000 35 000 31 500 48 000 40 000 32 000 61 000 45 000 34 000 Unit Diagnostic Characteristics Current sense ratio, IL = 120 A,Tj =-40°C: kILIS static on-condition, Tj =25°C: kILIS = IL : IIS, Tj =150°C: VON < 1.5 V19), IL = 30 A,Tj =-40°C: VIS 4.0 V Tj =150°C: (see diagram on page 12) IL = 16 A,Tj =-40°C: Tj =25°C: Tj =150°C: IL = 12 A,Tj =-40°C: Tj =25°C: Tj =150°C: IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): Sense current saturation Current sense leakage current IIS,lim IIN = 0, VIS = 0: IIS(LL) VIN = 0, VIS = 0, IL ≤ 0: IIS(LH) 6.5 ---60 62 --2 --66 -0.5 -500 --- mA µA Current sense settling time20) ts(IS) Tj =-40°C: VbIS(Z) Tj = 25...+150°C: µs V Overvoltage protection Ibb = 15 mA Input Input and operating current (see diagram page 13) IIN(on) IN grounded (VIN = 0) --- 0.8 -- 1.5 40 mA µA Input current for turn-off21) IIN(off) 19) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 20) not subject to production test, specified by design 21) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than 500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Infineon Technologies AG 6 2010-June-01 Data Sheet BTS555 Truth Table Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L H H H L H L H L H L H L L H Output level L H H H L L L L H H Z23) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 VON(Fold back) if VON>VON(SC), shutdown will occure L = "Low" Level H = "High" Level Overtemperature reset via input: IIN=low and Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) Terms I bb VbIN 3 Vbb IL V bb RIN V IN RON measurement layout (straight leads) VON OUT ≤ 5.5 mm 2 IN PROFET IS 1,5 I IN VbIS 4 I IS DS V OUT Vbb force contacts Out Force Sense contacts contacts (both out pins parallel) VIS R IS Two or more devices can easily be connected in parallel to increase load current capability. 22) 23) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. Power Transistor "OFF", potential defined by external impedance. Infineon Technologies AG 7 2010-June-01 Data Sheet BTS555 Input circuit (ESD protection) V bb Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 µs). + Vbb V V bIN ZD R bb Z,IN IN I IN VON OUT Logic unit Short circuit detection V IN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ). Inductive and overvoltage output clamp + Vbb VZ1 VON Current sense status output Vbb R bb ZD VZG OUT PROFET V Z,IS DS IS VOUT IS IIS R IS VIS VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. If you want to measure load currents up to IL(M), RIS should be less than V bb − 5V . I L ( M ) / K ilis VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -17 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19V referring to the OUT – potential the device will switch on, if diode DS is not used. Overvoltage protection of logic part + Vbb V R IN Z,IN Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. V Z,IS R bb IN Logic V OUT IS PROFET RV Signal GND R IS V Z,VIS Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ nominal. Note that when overvoltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Infineon Technologies AG 8 2010-June-01 Data Sheet BTS555 Reverse battery protection - Vbb R bb Version b: V IN OUT bb IN Vbb PROFET OUT R IN Logic IS Power Transistor IS DS R IS RV RL V Zb D Signal GND Power GND Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a neccessary voltage clamp is RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse given by non inductive loads RL connected to the same battery protection in applications with Vbb above switch and eliminates the need of clamping circuit: 1 1 1 + + = 16 V18); recommended value: RIN RIS RV 0.1A 1 0.1A if DS is not used (or = if DS is |Vbb| - 12V RIN |Vbb| - 12V V Vbb bb used). RL To minimize power dissipation at reverse battery OUT IN PROFET operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to IS the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV. Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a: V bb IN V bb OUT PROFET IS V ZL Infineon Technologies AG 9 2010-June-01 Data Sheet BTS555 Inverse load current operation Vbb Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω 1000000 V bb + IN - IL PROFET IS OUT - V OUT + IIS - 100000 V IN V IS R IS 10000 The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! 1000 100 10 1 1 10 100 1000 L [µH] Inductive load switch-off energy dissipation E bb E AS V V bb ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL IL [A] Externally adjustable current limit If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function. Vbb { RIS ER Energy stored in load inductance: EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: IL· L EAS= (V + |VOUT(CL)|) 2·RL bb IN Signal RV 2 IN V bb PROFET OUT IS Rload T1 Signal GND CV T2 ln (1+ |V IL·RL R IS Power GND OUT(CL)| ) Infineon Technologies AG 10 2010-June-01 Data Sheet BTS555 Options Overview Type BTS Overtemperature protection with hysteresis Tj >150 °C, latch function24) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection with overtemperature shutdown switches off when VON>6 V typ. (when first turned on after approx. 180 µs) X X X25) 555 X X Overvoltage shutdown Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -15 V typ 24) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 25) Can be "switched off" by using a diode D (see page 8) or leaving open the current sense output. S Infineon Technologies AG 11 2010-June-01 Data Sheet BTS555 Characteristics Current sense versus load current: IIS = f(IL) IIS [mA] 7 Current sense ratio: KILIS = f(IL), TJ = 25 °C kilis 65000 6 60000 55000 5 max 4 50000 45000 3 40000 min 35000 2 30000 1 25000 max typ min 0 0 50 100 150 20000 0 50 100 150 IL [A] Current sense ratio: KILIS = f(IL), TJ = -40 °C kilis 65000 IL [A] Current sense ratio: KILIS = f(IL), TJ = 150 °C kilis 65000 60000 60000 55000 55000 50000 50000 45000 45000 40000 40000 max 35000 35000 typ 30000 30000 max 25000 25000 typ min 20000 0 50 100 150 20000 0 50 min 100 150 IL [A] IL [A] Infineon Technologies AG 12 2010-June-01 Data Sheet BTS555 Typ. current limitation characteristic IL = f (VON, Tj) IL [A] 1000 900 800 Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] 1.6 1.4 1.2 700 600 500 400 300 200 VON >VON(SC) only for t < t d(SC) (otherwise immediate shutdown) 1.0 0.8 Tj = -40°C 85°C 25°C 0.6 0.4 0.2 150°C 100 0 0 VON(FB) 10 15 20 0 0 20 40 60 80 VbIN [V] VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj); IL = 30 A; VIN = 0 RON [mOhm] 6 static 5 dynamic 4 Tj = 150°C 85°C 25°C -40°C 3 2 1 0 0 5 10 15 40 20 Vbb [V] Infineon Technologies AG 13 2010-June-01 Data Sheet BTS555 Timing diagrams Figure 1: Switching a resistive load, change of load current in on-condition: Figure 2b: Switching an inductive load: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IL tslc(IS) t slc(IS) IL Load 1 Load 2 IIS IIS tson(IS) t soff(IS) t t The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3: Short circuit: shut down by short circuit detection, reset by IIN = 0. Figure 2a: Switching motors and lamps: IIN IIN IL IL(SCp) VOUT td(SC) IIL IIS VOUT>>0 VOUT=0 IIS t t Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6). Shut down remains latched until next reset via input. Infineon Technologies AG 14 2010-June-01 Data Sheet BTS555 Figure 4: Overtemperature, Reset if (IIN=low) and (Tj