BTS6144P

PROFET® Data sheet BTS 6144B/P Smart Highside Power Switch • Reverse battery protection by self turn on of power MOSFET Reversave Features • Short circuit protection with latch • Current limitation • Overload protection • Thermal shutdown with restart • Overvoltage protection (including load dump) • Loss of ground protection • Loss of Vbb protection (with external diode for charged inductive loads) • Very low standby current • Fast demagnetization of inductive loads • Electrostatic discharge (ESD) protection • Optimized static electromagnetic compatibility (EMC) Product Summary Operating voltage On-state resistance Nominal current Load current (ISO) Current limitation Package TO 220-7-180 Vbb(on) RON IL(nom) IL(ISO) IL12(SC) 5.5 ... 38 V 9 mΩ 9.5 A 37.5 A 90 A TO 220-7-230 7 1 SM D Diagnostic Function • Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown) Application • Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 4 & Tab R Voltage source Overvoltage protection Current limit Gate protection bb + V bb Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection OUT 1, 2, 6, 7 IL Current Sense Load 3 IN ESD Logic I IN Temperature sensor I IS IS PROFET  Load GND VIN V IS Logic GND 5 R IS Infineon Technologies AG Page 1 of 16 2003-Oct-01 Data sheet BTS 6144B/P Pin 1; 2 3 4; Tab 5 Symbol OUT IN Vbb IS O I + S Function Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted* . Input; activates the power switch if shorted to ground. Supply Voltage; positive power supply voltage; tab and pin4 are internally shorted. Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Truth Table on page 8) Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted* . 6; 7 OUT O *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection 1) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1Ω, td= 400 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation m3) single pulse, IL = 20 A, Vbb= 12V Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF Current through input pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 9 Symbol Vbb Vbb VLoad dump2) IL Tj Tstg Ptot EAS VESD IIN IIS Values 38 30 45 self-limited -40 ...+150 -55 ...+150 81 0.4 3.0 +15, -120 +15, -120 Unit V V V A °C W J kV mA Input voltage slew rate Vbb ≤ 16V : dVbIN / dt Vbb > 16V 4): self-limited 20 V/µs 1) 2) 3) 4) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 See also diagram on page 11. See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also page 10. Infineon Technologies AG Page 2 of 16 2003-Oct-01 Data sheet BTS 6144B/P Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC 5) junction - ambient (free air): RthJA SMD version, device on PCB 6): Values typ max 0.7 0.8 60 -33 40 Unit K/W Electrical Characteristics Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,2,6,7) VIN= 0, Vbb= 5.5V, IL = 10 A VIN= 0, Vbb= 12V, IL = 10 A Tj=25 °C: RON Tj=150 °C: -----9.5 17 7 13 30 13 22 9 16 60 mΩ Tj=25 °C: Tj=150 °C: Output voltage drop limitation at small load currents (Tab to pin 1,2,6,7) Tj=-40...150 °C: Nominal load current (Tab to pin 1,5) ISO Proposal: VON ≤ 0.5 V, TC = 85°C, Tj ≤ 150°C SMD 6), VON ≤ 0.5 V, TA = 85°C, Tj ≤ 150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 2.2 Ω, Tj=-40...150 °C Slew rate on 25 to 50% VOUT, RL = 2.2 Ω, Tj=-40...150 °C Slew rate off 50 to 25% VOUT, RL = 2.2 Ω, Tj=-40...150 °C VON(NL) mV IL(ISO) IL(nom) ton toff dV /dton -dV/dtoff 37.5 9.5 ----- 48 12 300 300 0.2 0.2 --550 600 0.35 0.45 A µs V/µs V/µs 5) 6) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG Page 3 of 16 2003-Oct-01 Data sheet BTS 6144B/P Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Operating Parameters Operating voltage (VIN=0) Tj=-40...150 °C: Undervoltage shutdown 7) 8) Undervoltage restart of charge pump Overvoltage protection 9) Ibb=15 mA Tj=-40...+150°C: Standby current Tj=-40...+120°C: IIN=0 Tj=150°C: Reverse Battery Reverse battery voltage 10) On-state resistance (pin 4, Tab to pin 1,2,6,7) Vbb(on) VbIN(u) Vbb(ucp) VZ,IN Ibb(off) 5.5 --63 --- -2.5 4 67 3 6 38 3.5 5.5 -6 14 V V V V µA -Vbb -- -- 16 V Vbb= - 8V, VIN= 0, IL = -10 A, RIS = 1 kΩ, 8) Tj=25 °C: RON(rev) Tj=150 °C: Vbb= -12V, VIN= 0, IL = -10 A, RIS = 1 kΩ, Tj=25 °C: Tj=150 °C: Integrated resistor in Vbb line Rbb ------ 8.5 13 8 13 100 12 18 11 19 150 mΩ Ω Inverse Operation 11) Output voltage drop (pin 4, Tab to pin 1,2,6,7) 8) IL = -10 A, RIS = 1 kΩ, Tj=25 °C: -VON(inv) IL = -10 A, RIS = 1 kΩ, Tj=150 °C: Turn-on delay after inverse operation; IL > 0A 8) VIN(inv) = VIN(fwd) = 0 V td(inv) ---700 300 1 ---mV ms 7) VbIN=Vbb-VIN see diagram page 14. not subject to production test, specified by design 9) See also VON(CL) in circuit diagram page 9. 10) For operation at voltages higher then |16V| please see required schematic on page 10. 11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv)) after the transition from inverse to forward mode. 8) Infineon Technologies AG Page 4 of 16 2003-Oct-01 Data sheet BTS 6144B/P Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions 12) Short circuit current limit (pin 4, Tab to pin 1,2,6,7) 13) Short circuit current limit at VON = 6V 14) Tj =-40°C: Tj =25°C: =+150°C: Tj Short circuit current limit at VON = 12V Tj =-40°C: tm=170µs Tj =25°C: =+150°C: Tj 14) Short circuit current limit at VON = 18V Tj =-40°C: Tj =25°C: Tj =+150°C: Short circuit current limit at VON = 24V Tj =-40°C: tm=170µs Tj =25°C: Tj =+150°C: Short circuit current limit at VON = 36V 14) Tj =-40°C: Tj =25°C: Tj =+150°C: Short circuit shutdown detection voltage Short circuit shutdown delay after input current positive slope, VON > VON(SC), Tj = -40...+150°C min. value valid only if input "off-signal" time exceeds 30 µs IL6(SC) IL12(SC) IL18(SC) IL24(SC) IL36(SC) VON(SC) td(SC1) --90 --55 --45 --28 --15 2.5 350 140 130 120 105 95 85 75 70 65 47 46 45 27 27 27 3.5 650 170 --130 --100 --70 --40 --4.5 1200 A A A A A V µs µs V °C K Short circuit shutdown delay during on condition14) VON > VON(SC) Output clamp (inductive load switch off) 15) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Thermal overload trip temperature Thermal hysteresis td(SC2) VON(CL) Tjt ∆Tjt -39 150 -- 2 42 175 10 ----- Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) Short circuit current limit for max. duration of t d(SC1) , prior to shutdown, see also figures 3.x on page 13. 14) not subject to production test, specified by design 15) See also figure 2b on page 12. 12) Infineon Technologies AG Page 5 of 16 2003-Oct-01 Data sheet BTS 6144B/P Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS, IIS < IIS,lim 16), VIS 4.5 V IL = 35A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 10A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 2.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 0.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IIN = 0 (e.g. during deenergizing of inductive loads): Sense current under fault conditions 17) VON>1V, typ Tj = -40...+150°C: Tj = -40...+150°C: kILIS -- 12500 -- 11200 11000 11000 10500 10500 10800 10000 10000 10000 7000 8000 9000 -IIS,fault IIS,lim 4.0 4.0 350 --50 12700 12600 12200 12700 12600 12200 12300 12500 13000 14000 14500 15000 0 5.2 6.0 650 0.1 0.1 -- 14000 13500 12800 14300 14000 13300 17000 16500 15000 26000 24500 23000 -7.5 7.5 1200 0.5 1 -mA mA µs µA µA mA Sense saturation current VON1V, Tj = -40...+150°C Current sense leakage current, IIN = 0 Current sense offset current, VIN = 0, IL ≤ 0 Minimum load current for sense functionality, IIS(LL) IIS(LH) IL(MIN) VIN = 0, Tj = -40...+150°C Current sense settling time to IIS static after input current positive slope, 18) tson(IS) IL = 0 20 A, Tj= -40...+150°C Current sense settling time during on condition, 18) IL = 1 0 20 A, Tj= -40...+150°C tslc(IS) Overvoltage protection Ibb = 15 mA Tj = -40...+150°C: VZ,IS -- 250 500 µs µs V -63 50 67 100 -- 16) 17) See also figures 4.x and 6.x on page 13 and 14. Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth table on page 8. 18) not subject to production test, specified by design Infineon Technologies AG Page 6 of 16 2003-Oct-01 Data sheet BTS 6144B/P Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input Required current capability of input switch IIN(on) Tj =-40..+150°C: Input current for turn-off Tj =-40..+150°C: IIN(off) --- 1.4 -- 2.2 30 mA µA Infineon Technologies AG Page 7 of 16 2003-Oct-01 Data sheet BTS 6144B/P Truth Table Input Current level L H L H L H L H L H L H Output level L H L H L L L L H H Z H Current Sense IIS ≈0 (IIS(LL)) nominal ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) 3.5V (typ.) . See also page 11. 21) Low ohmic short to V may reduce the output current I and therefore also the sense current I . bb L IS Infineon Technologies AG Page 8 of 16 2003-Oct-01 Data sheet BTS 6144B/P Input circuit (ESD protection) V bb Inductive and overvoltage output clamp + Vbb VZ1 V ON V V bIN ZD R bb Z,IN IN I OUT PROFET IN VON is clamped to VON(Cl) = 42V typ V IN ESD-Zener diode: 67 V typ., max 15 mA; Overvoltage protection of logic part + Vbb Current sense output Normal operation R IN V Z,IN V Z,IS IN R bb Vbb Rbb IIS,fault ZD Logic V V OUT Z,IS IS PROFET R V IS IIS R IS R IS V Z,VIS V IS Signal GND VZ,IS = 67 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. Therefore RIS should be less than Rbb = 100 Ω typ., VZ,IN = VZ,IS = 67 V typ., RIS = 1 kΩ nominal. Note that when overvoltage exceeds 67 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Vbb − 5V . 7.5mA Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Infineon Technologies AG 9 of 16 2003-Oct-01 Data sheet BTS 6144B/P Reversave (Reverse battery protection) - V bb R bb Vbb disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL+VD Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible! Infineon Technologies AG 10 of 16 2003-Oct-01 Data sheet BTS 6144B/P Short circuit detection Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC) (typ.650 µs). Inductive load switch-off energy dissipation E bb E AS V ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL Overload detection Fault Condition: VON > 1 V typ. + V bb V bb VO N { OUT Logic unit d etection circuit RIS ER Energy stored in load inductance: EL = 1/2·L·I L 2 Short circuit Short circuit is a combination of primary and secondary impedance’s and a resistance’s. While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: IL· L (V + |VOUT(CL)|) 2·RL bb IL·RL 5uH IN 10mOhm V bb OUT L SC EAS= ln (1+ |V OUT(CL)| ) PROFET IS I R SC Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω IN SC Z L V bb 1000 L [m H ] 100 Allowable combinations of minimum, secondary resistance for full protection at given secondary inductance and supply voltage for single short circuit event: [uH] 15 L SC V bb : 16V 24V 18V 10 30V 10 5 0 0 100 200 300 R SC [mOhm] 1 0 ,1 0 ,0 1 1 10 I_ L [A ] 1 0 0 Infineon Technologies AG 11 of 16 2003-Oct-01 Data sheet BTS 6144B/P Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IIL IL tslc(IS) t slc(IS) IIS Load 1 Load 2 IIS,faut / I IS,lim t IIS tson(IS) t soff(IS) t As long as VbIS < VZ,IS the sense current will never exceed IIS,fault and/or IIS,lim. Figure 2b: Switching an inductive load: The sense signal is not valid during a settling time after turn-on/off and after change of load current. IIN VOUT VON(CL) IL IIS t Infineon Technologies AG 12 of 16 2003-Oct-01 Data sheet BTS 6144B/P Figure 3a: Typ. current limitation characteristic [A] I L(SC) Figure 3c: Short circuit type two: shut down by short circuit detection, reset by IIN = 0. IIN 120 100 80 60 40 1V typ. IL Internal Switch off td(SC2) depending on the external impedance VON 20 V ON IIS IL k ilis 0 0V ON(SC) 10 20 30 [V] I IS,fault t In case of VON > VON(SC) (typ. 3.5 V) the device will be switched off by internal short circuit detection. Figure 3b: Short circuit type one: shut down by short circuit detection, reset by IIN = 0. Shut down remains latched until next reset via input. Figure 4a: Overtemperature Reset if Tj VON(SC) IL(SC) IL IIS IIS,fault td(SC1) tm IIS I IS,fault VOUT Auto Restart tdelay(fault) t Shut down remains latched until next reset via input. Tj t Infineon Technologies AG 13 of 16 2003-Oct-01 Data sheet BTS 6144B/P Figure 4b: Overload Tj