BTS6163D_07

PROFET® BTS 6163 D Smart Highside Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET • Short circuit protection with latch • Current limitation • Overload protection • Thermal shutdown with restart • Overvoltage protection (including load dump) • Loss of ground protection • Loss of Vbb protection (with external diode for charged inductive loads) • Very low standby current • Fast demagnetization of inductive loads • Electrostatic discharge (ESD) protection • Optimized static electromagnetic compatibility (EMC) • Green Product (RoHS compliant) • AEC qualified Features Product Summary Operating voltage On-state resistance Nominal current Load current (ISO) Current limitation Package Vbb(on) RON IL(nom) IL(ISO) IL12(SC) 5.5 ... 62 V 20 mΩ 5.5 A 17 A 70 A PG-TO252-5-11 (DPAK 5 pin; less than half the size as TO 220 SMD) Diagnostic Function • Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown) Application • Power switch with current sense diagnostic feedback for 42V and 24 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab R + V bb Voltage source Overvoltage protection Current limit Gate protection bb Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection OUT 1, 5 IL Current Sense Load 2 IN ESD Logic I IN Temperature sensor I IS IS  PROFET Load GND VIN V IS Logic GND 4 R IS Data Sheet 1 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Pin 1 2 Tab/(3) 4 Symbol OUT IN Vbb IS O I + S Function Output; output to the load; pin 1 and 5 must be externally shorted* . Input; activates the power switch if shorted to ground. Supply Voltage; positive power supply voltage; tab and pin3 are internally shorted. Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Truth Table on page 8) Output; output to the load; pin 1 and 5 must be externally shorted* . 5 OUT O *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection 1) Load dump protection VLoadDump = UA + Vs, UA = 24 V RI= 2 Ω, RL= 4.4 Ω, td= 400 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, 3) single pulse IL = 20 A, Vbb= 24V Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF Current through input pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 9 Symbol Vbb Vbb VLoad dump 2) IL Tj Tstg Ptot EAS VESD IIN IIS Values 62 48 70 self-limited -40 ...+150 -55 ...+150 59 0.25 3.0 +15, -120 +15, -120 Unit V V V A °C W J kV mA Input voltage slew rate Vbb ≤ 16V : dVbIN / dt Vbb > 16V 4): self-limited 20 V/µs 1) 2) 3) 4) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 See also diagram on page 11. See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also page 10. 2 of 18 Rev. 1.0, 2007-07-23 Data Sheet PROFET® BTS 6163 D Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB 6): Values Unit typ max -1.1 K/W 80 -45 55 Electrical Characteristics Parameter and Conditions at Tj= 25, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) VIN= 0, Vbb= 5.5V, IL = 7.5 A VIN= 0, Vbb= 12..24V, IL = 7.5 A Tj=25 °C: RON Tj=150 °C: -----19 38 16 32 40 25 50 20 40 65 mΩ Tj=25 °C: Tj=150 °C: Output voltage drop limitation at small load currents (Tab to pin 1,5) 5) Tj=-40...150 °C: Nominal load current (Tab to pin 1,5) ISO Proposal: VON ≤ 0.5 V, TC = 85°C, Tj ≤ 150°C SMD 6), VON ≤ 0.5 V, TA = 85°C, Tj ≤ 150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 3.9 Ω, Tj=-40...150 °C Slew rate on 25 to 50% VOUT, RL = 3.9 Ω, Tj=-40...150 °C Slew rate off 50 to 25% VOUT, RL = 3.9 Ω, Tj=-40...150 °C VON(NL) mV IL(ISO) IL(nom) ton toff dV /dton -dV/dtoff 17 5.5 ----- 21.5 6.5 150 200 0.65 0.65 --300 550 A µs 1.0 V/µs 1.2 V/µs 5) 6) See figure 7a on page 15. Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 3 of 18 Rev. 1.0, 2007-07-23 Data Sheet PROFET® BTS 6163 D Parameter and Conditions at Tj= 25, Vbb = 24 V unless otherwise specified Symbol min. Values typ. max. Unit Operating Parameters Operating voltage (VIN=0) Tj=-40...150 °C: Vbb(on) Undervoltage shutdown 7) 8) VbIN(u) Undervoltage restart of charge pump Vbb(ucp) Overvoltage protection 9) Ibb=15 mA Standby current IIN=0 Reverse Battery Reverse battery voltage 10) On-state resistance (pin 1,5 to pin 3) Vbb= - 8V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ, 8) Tj=25 °C: RON(rev) Tj=150 °C: Vbb= -12..-24V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ, Tj=25 °C: Tj=150 °C: Integrated resistor in Vbb line Rbb -Vbb VZ,IN Tj=-40...+120°C: Ibb(off) Tj=150°C: 5.5 --68 --- -2.5 4 73 3 6 62 3.5 5.5 -6 14 V V V V µA -- -- 16 V ------ 19 35 18 33 100 25 44 23 40 150 mΩ Ω Inverse Operation 11) Output voltage drop (pin 1,5 to pin 3) 8) Tj=25 °C: -VON(inv) IL = -7.5 A, RIS = 1 kΩ, IL = -7.5 A, RIS = 1 kΩ, Tj=150 °C: Turn-on delay after inverse operation; IL > 0A 8) VIN(inv) = VIN(fwd) = 0 V td(inv) ---700 300 1 ---mV ms 7) VbIN=Vbb-VIN see diagram page 14. Not subject to production test, specified by design. 9) See also VON(CL) in circuit diagram page 9. 10) For operation at voltages higher then |16V| please see required schematic on page 10. 11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv)) after the transition from inverse to forward mode. 8) Data Sheet 4 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Parameter and Conditions at Tj= 25, Vbb = 24 V unless otherwise specified Symbol min. Values typ. max. Unit Protection Functions 12) Short circuit current limit (Tab to pin 1,5) 13) Short circuit current limit at VON = 6V14) Tj =-40°C: Tj =25°C: Tj =+150°C: Short circuit current limit at VON = 12V 14) Tj =-40°C: Tj =25°C: Tj =+150°C: Short circuit current limit at VON = 18V 14) Tj =-40°C: Tj =25°C: =+150°C: Tj Short circuit current limit at VON = 24V Tj =-40°C: tm=170µs Tj =25°C: =+150°C: Tj Short circuit current limit at VON = 30V Tj =-40°C: tm=170µs Tj =25°C: Tj =+150°C: Short circuit current limit at VON = 45V 14) Tj =-40°C: Tj =25°C: Tj =+150°C: Short circuit shutdown detection voltage (pin 3 to pins 1,5) IL6(SC) IL12(SC) IL18(SC) IL24(SC) IL30(SC) IL45(SC) --50 --40 --30 --25 --20 --15 2.5 350 90 80 65 80 70 55 55 50 48 45 40 35 30 30 30 22 22 22 3.5 650 110 --100 --80 --60 --50 --35 --4.5 1200 A A A A A A VON(SC) td(SC1) V µs µs V °C K Short circuit shutdown delay after input current positive slope, VON > VON(SC), Tj = -40...+150°C min. value valid only if input "off-signal" time exceeds 30 µs Short circuit shutdown delay during on condition13) VON > VON(SC) Output clamp (inductive load switch off) 15) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Thermal overload trip temperature Thermal hysteresis td(SC2) VON(CL) Tjt ∆Tjt -63 150 -- 2 67 175 10 ----- Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) Short circuit current limit for max. duration of t d(SC1) , prior to shutdown, see also figures 3.x on page 13. 14) Not subject to production test, specified by design. 15) See also figure 2b on page 12. 12) Data Sheet 5 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Parameter and Conditions at Tj= 25, Vbb = 24 V unless otherwise specified Symbol min. kILIS Values typ. max. -- Unit Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS, IIS < IIS,lim 16), VIS 4.5 V IL = 30A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 7.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 2.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 0.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IIN = 0 (e.g. during deenergizing of inductive loads): Sense current under fault conditions 17) VON>1V, typ Tj = -40...+150°C: Tj = -40...+150°C: -- 9000 8300 9000 10000 8200 9000 9800 8100 8800 9500 8200 8900 10000 8100 8900 9800 8000 8700 9500 7200 8900 11000 7500 8900 10600 7700 8700 10000 5000 9500 16000 6000 10000 15000 7500 10500 13000 -IIS,fault IIS,lim 4.0 4.0 350 ---0 5.2 6.0 650 0.1 1.0 250 -7.5 7.5 1200 0.5 2.0 500 mA mA µs µA µA µs µs V Sense current saturation VON1V, Tj = -40...+150°C Current sense leakage current, IIN = 0 Current sense offset current, VIN = 0, IL ≤ 0 Current sense settling time to IIS static after input current positive slope, 18) 20 A, Tj= -40...+150°C IL = 0 Current sense settling time during on condition, 18) IL = 1 0 20 A, Tj= -40...+150°C Overvoltage protection Ibb = 15 mA Tj = -40...+150°C: IIS(LL) IIS(LH) tson(IS) tslc(IS) VZ,IS -68 50 73 100 -- 16) 17) See also figures 4.x and 6.x on page 13 and 14. Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth table on page 8. 18) Not subject to production test, specified by design. Data Sheet 6 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Parameter and Conditions at Tj= 25, Vbb = 24 V unless otherwise specified Symbol min. --- Values typ. 1.6 -max. 2.4 30 Unit Input Required current capability of input switch IIN(on) Tj =-40..+150°C: Input current for turn-off Tj =-40..+150°C: IIN(off) mA µA Data Sheet 7 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Truth Table Input Current level L H L H L H L H L H L H Output level L H L H L L L L H H Z H Current Sense IIS ≈0 (IIS(LL)) nominal ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) 3.5V (typ.). See also page 11. 21) Low ohmic short to V may reduce the output current I and therefore also the sense current I . bb L IS Data Sheet 8 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Input circuit (ESD protection) V bb Inductive and overvoltage output clamp + Vbb VZ1 V V bIN ZD R bb Z,IN V ON IN I IN OUT PROFET VON is clamped to VON(Cl) = 67 V typ V IN ESD-Zener diode: 73 V typ.., max 15 mA; Overvoltage protection of logic part + Vbb V Z,IN V Z,IS R IN IN Current sense output Normal operation Vbb Rbb IIS,fault IIS R IS ZD R bb Logic V V OUT Z,IS IS PROFET R V IS R IS V Z,VIS V IS Signal GND VZ,IS = 73 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. Therefore RIS should be less than Rbb = 100 Ω typ., VZ,IN = VZ,IS = 73 V typ., RIS = 1 kΩ nominal. Note that when overvoltage exceeds 73 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Vbb − 5V . 7.5mA Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Data Sheet 9 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Reversave (Reverse battery protection) - V bb R bb Vbb disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL+VD Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible! Data Sheet 10 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Short circuit detection Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC) (typ.650 µs). Inductive load switch-off energy dissipation E bb E AS V ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL Overload detection Fault Condition: VON > 1 V typ. + V bb V bb VO N { OUT Logic unit d etection circuit RIS ER Energy stored in load inductance: Short circuit Short circuit is a combination of primary and secondary impedance’s and a resistance’s. EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: 2 5uH IN 10mOhm V bb OUT L SC EAS= IL· L (V + |VOUT(CL)|) 2·RL bb ln (1+ |V IL·RL OUT(CL)| ) PROFET IS I R SC Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 24 V, RL = 0 Ω 1000 L [m H ] IN SC Z L V bb Allowable combinations of minimum, secondary resistance for full protection at given secondary inductance and supply voltage for single short circuit event: [uH] 15 L SC V bb : 32V 36V 40V 48V 100 10 10 5 0 0 100 200 1 0 ,1 R SC 300 [mOhm] 0 ,0 1 1 10 I_ L [A ] 1 0 0 Data Sheet 11 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IIL IL tslc(IS) t slc(IS) IIS Load 1 Load 2 IIS,faut / I IS,lim t IIS tson(IS) t soff(IS) t As long as VbIS < VZ,IS the sense current will never exceed IIS,fault and/or IIS,lim. Figure 2b: Switching an inductive load: The sense signal is not valid during a settling time after turn-on/off and after change of load current. IIN VOUT VON(CL) IL IIS t Data Sheet 12 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Figure 3a: Typ. current limitation characteristic [A] 80 I L(SC) Figure 3c: Short circuit type two: shut down by short circuit detection, reset by IIN = 0. IIN IL 60 Internal Switch off td(SC2) depending on the external impedance 40 VON 20 1V typ. 0 0V ON(SC) V ON 10 20 30 [V] 50 IIS IL k ilis I IS,fault t In case of VON > VON(SC) (typ. 3.5 V) the device will be switched off by internal short circuit detection. Figure 3b: Short circuit type one: shut down by short circuit detection, reset by IIN = 0. Shut down remains latched until next reset via input. Figure 4a: Overtemperature Reset if Tj VON(SC) IL(SC) IL IIS IIS,fault td(SC1) tm IIS I IS,fault VOUT Auto Restart tdelay(fault) t Shut down remains latched until next reset via input. Tj t Data Sheet 13 of 18 Rev. 1.0, 2007-07-23 PROFET® BTS 6163 D Figure 4b: Overload Tj