BTS640S2

PROFET® BTS 640 S2 Smart Sense High-Side Power Switch Features • Short circuit protection • Current limitation • Proportional load current sense • CMOS compatible input Package • Open drain diagnostic output • Fast demagnetization of inductive loads TO220-7-11 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Overload protection • Thermal shutdown 1 Standard (staggered) • Overvoltage protection including load dump (with external GND-resistor) • Reverse battery protection (with external GND-resistor) • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(on) RON IL(ISO) IL(SCr) 5.0 ... 34 V 30 mΩ 12.6 A 24 A TO220-7-12 TO263-7-2 1 SMD 1 Straight • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits Application General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Block Diagram 4 + V bb Voltage source V Logic Voltage sensor Overvoltage protection Current limit Gate protection OUT 6, 7 IL Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection Temperature sensor 3 1 IN Current Sense Load ST ESD Logic R O GND 5 R IS I IS IS Signal GND GND  PROFET Load GND 2 Semiconductor Group Page 1 of 15 2003-Oct-01 BTS 640 S2 Pin 1 2 3 4 5 6&7 Symbol ST GND IN Vbb IS OUT (Load, L) Function Diagnostic feedback: open drain, invers to input level Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Sense current output, proportional to the load current, zero in the case of current limitation of load current Output, protected high-side power output to the load. Both output pins have to be connected in parallel for operation according this spec (e.g. kILIS). Design the wiring for the max. short circuit current Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Symbol Vbb Vbb VLoad dump3) IL Tj Tstg Ptot Values 43 34 60 self-limited -40 ...+150 -55 ...+150 85 0,41 3,5 1.0 4.0 8.0 -10 ... +16 ±2.0 ±5.0 ±14 Unit V V V A °C W J kV Load dump protection1) VLoadDump = VA + Vs, VA = 13.5V RI2)= 2 Ω, RL= 1 Ω, td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 12.6 A, ZL = 4,2 mH, 0 Ω: EAS IL = 4 A, ZL = 330 mH, 0 Ω: EAS Electrostatic discharge capability (ESD) IN: VESD (Human Body Model) ST, IS: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 8 VIN IIN IST IIS V mA 1) 2) 3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω resistor in the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839 Semiconductor Group Page 2 2003-Oct-01 BTS 640 S2 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB4): Values typ max -- 1.47 -75 33 -Unit K/W Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 6&7) IL = 5 A Tj=25 °C: RON Tj=150 °C: VON(NL) IL(ISO) IL(NOM) IL(GNDhigh) ton toff dV /dton -dV/dtoff -- 27 54 50 12.6 4.5 -70 80 --- 30 60 ---8 150 200 1 1 mΩ Output voltage drop limitation at small load currents (pin 4 to 6&7), see page 14 IL = 0.5 A VON = 0.5 V, TC = 85 °C Tj =-40...+150°C: -11.4 4.0 -25 25 0.1 0.1 mV A A mA µs V/µs V/µs Nominal load current, ISO Norm (pin 4 to 6&7) Nominal load current, device on PCB4) TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V, Output current (pin 6&7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 9; not subject to production test, specified by design Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group Page 3 2003-Oct-01 BTS 640 S2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Operating Parameters Operating voltage 5) Undervoltage shutdown Undervoltage restart Vbb(on) Tj =-40...+150°C: Vbb(under) Tj =-40...+25°C: Vbb(u rst) Tj =+150°C: Undervoltage restart of charge pump see diagram page 13 Tj =-40...+25°C: Vbb(ucp) Tj =25...150°C: Undervoltage hysteresis ∆Vbb(under) Tj =-40...+150°C: ∆Vbb(under) = Vbb(u rst) - Vbb(under) 5.0 3.2 ----34 33 -41 43 ----- --4.5 4.7 -0.5 --1 -47 4 12 -1.2 34 5.0 5.5 6.0 6.5 7.0 -43 ---52 15 25 10 3 V V V V V V V V V µA µA mA Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection6) Ibb=40 mA Vbb(over) Tj =-40...+150°C: Vbb(o rst) Tj =-40...+150°C: ∆Vbb(over) Tj =-40°C: Vbb(AZ) Tj =+25...+150°C Tj =-40...+150°C: Standby current (pin 4) Tj=-40...+25°C: Ibb(off) Tj= 150°C: IL(off) Off state output current (included in Ibb(off)) VIN=0 VIN=0, Tj =-40...+150°C: Operating current (Pin 2)7), VIN=5 V IGND 5) 6) 7) At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram page 9. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 4 2003-Oct-01 BTS 640 S2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions8) Initial peak short circuit current limit (pin 4 to 6&7) IL(SCp) Tj =-40°C: Tj =25°C: =+150°C: Tj Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 12) 48 40 31 -- 56 50 37 24 -47 -10 -600 65 58 45 --52 --32 -- A A V °C K V mV Output clamp (inductive load switch off) Tj =-40°C: Tj =+25..+150°C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 9) at VOUT = Vbb - VON(CL); IL= 40 mA, VON(CL) Tjt ∆Tjt -Vbb 41 43 150 ---- Reverse battery voltage drop (Vout > Vbb) IL = -5 A Tj=150 °C: -VON(rev) Diagnostic Characteristics Current sense ratio10), static on-condition, VIS = 0...5 V, Vbb(on) = 6.511)...27V, Tj kILIS = IL / IIS = -40°C, IL = 5 A: kILIS Tj= -40°C, IL= 0.5 A: 4550 3300 4550 4000 5000 5000 5000 5000 6.1 ---- 6000 8000 5550 6500 6.9 1 15 10 V µA Tj= 25...+150°C, IL= 5 A: , Tj= 25...+150°C, IL = 0.5 A: Current sense output voltage limitation Tj = -40 ...+150°C IIS = 0, IL = 5 A: VIS(lim) 5.4 0 0 0 Current sense leakage/offset current Tj = -40 ...+150°C VIN=0, VIS = 0, IL = 0: IIS(LL) VIN=5 V, VIS = 0, IL = 0: IIS(LH) VIN=5 V, VIS = 0, VOUT = 0 (short circuit): IIS(SH)12 ) 8) 9) 10) 11) 12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 9). This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by a factor of two by matching the value of kILIS for every single device. In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is High. See figure 2b, page 11. Valid if Vbb(u rst) was exceeded before. not subject to production test, specified by design Semiconductor Group Page 5 2003-Oct-01 BTS 640 S2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max --300 Unit Current sense settling time to IIS static±10% after positive input slope13) , IL = 0 5 A, Tj= -40...+150°C tson(IS) µs µs µs V kΩ Current sense settling time to 10% of IIS static after negative input slope13) , IL = 5 0A, tsoff(IS) Tj= -40...+150°C --2 5 30 10 3 15 100 -4 40 Current sense rise time (60% to 90%) after change of load current13) , IL = 2.5 5A tslc(IS) Open load detection voltage14) (off-condition) VOUT(OL) Tj=-40..150°C: Internal output pull down (pin 6 to 2), VOUT=5 V, Tj=-40..150°C RO Input and Status Feedback15) Input resistance see circuit page 8 RI 3,0 -1.5 -1 20 ---5.4 ---- 4,5 --0.5 -50 400 13 1 6.1 ---- 7,0 3.5 --50 90 ---6.9 0.4 0.7 2 kΩ V V V µA µA µs µs µs V Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) Input threshold hysteresis ∆ VIN(T) Off state input current (pin 3), VIN = 0.4 V Tj =-40..+150°C IIN(off) On state input current (pin 3), VIN = 5 V Tj =-40..+150°C IIN(on) td(ST OL3) tdon(ST) tdoff(ST) Delay time for status with open load after Input neg. slope (see diagram page 13) Status delay after positive input slope13) Tj=-40 ... +150°C: Status delay after negative input slope13) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) Tj = +150°C, IST = +1.6 mA: Status leakage current, VST = 5 V, Tj=25 ... +150°C: IST(high) µA 13) 14) not subject to production test, specified by design External pull up resistor required for open load detection in off state. 15) If a ground resistor R GND is used, add the voltage drop across this resistor. Semiconductor Group Page 6 2003-Oct-01 BTS 640 S2 Truth Table Input level Normal operation Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Undervoltage Overvoltage Negative output voltage clamp L = "Low" Level H = "High" Level L H L H L H L H L H L H L H L H L Output level L H L H L L16) L L H H L19) H L L L L L Status level H L H H H H H H L17) L H (L20)) L H L H L H Current Sense IIS 0 nominal 0 0 0 0 0 0 0