BTS6510

Data Sheet BTS6510 Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense • Loss of Vbb protection2) • Electrostatic discharge (ESD) protection Product Summary Operating voltage On-state resistance Noinal current Load current (ISO) Short circuit current limitation Current sense ratio Vbb(on) 5.0 ... 34 RON IL(nom) IL(ISO) IL(SC) IL : IIS V 6.0 mΩ 17 A 70 A 130 A 14 000 TO 220-7 • Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads • Replaces electromechanical relays, fuses and discrete circuits Application 7 1 SM D General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 4 & Tab R Voltage source Overvoltage protection Current limit Gate protection bb + V bb Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection OUT 1,2,6,7 IL Current Sense Load 3 IN ESD Logic I IN Temperature sensor I IS IS  PROFET Load GND VIN V IS Logic GND 5 R IS 1 ) 2) With additional external diode. Additional external diode required for energized inductive loads (see page 8). Infineon Technologies AG Page 1of 15 2003-Oct-01 Data Sheet BTS6510 Pin 1 2 3 4 Symbol OUT OUT IN Vbb O O I Function Output to the load. The pins 1,2,6 and 7 must be shorted with each other 3 especially in high current applications! ) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection 4 instead of this pin ). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 6) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) + 5 6 7 IS OUT OUT S O O Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for short circuit protection, Tj,start =-40 ...+150°C: (EAS limitation see diagram on page 9) Load current (short circuit current, see page 5) Load dump protection VLoadDump = VA + Vs, VA = 13.5 V RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = 20 A, ZL = 7.5 mH, 0 Ω, (see diagrams on page 9 ) Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ Symbol Vbb Vbb IL VLoad dump6) Tj Tstg Ptot EAS VESD IIN IIS Values 42 34 self-limited 75 -40 ...+150 -55 ...+150 170 1.5 4 +15 , -250 +15 , -250 Unit V V A V °C W J kV mA Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 3) 4) 5) 6) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add about 0.3 mΩ to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Page 2 of 15 2003-Oct-01 Data Sheet BTS6510 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min --7 chip - case: RthJC ) junction - ambient (free air): RthJA SMD version, device on PCB8): Values typ max -- 0.75 60 -33 Unit K/W Electrical Characteristics Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7) VIN = 0, IL = 20 A Tj = 25 °C: Tj = 150 °C: VIN = 0, IL = 90 A Tj = 150 °C: 9) Vbb = 6V , VIN = 0, IL = 20 A Tj = 150 °C: 10) Nominal load current , (Tab to pins 1,2,6,7) ISO Proposal: VON = 0.5 V,TC = 85°C,Tj ≤ 150°C 11) SMD 8): TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V Maximum load current in resistive range (Tab to pins 1,2,6,7) VON = 1.8 V, Tc = 25 °C: see diagram on page 12 VON = 1.8 V, Tc = 150 °C: 12) Turn-on time IIN to 90% VOUT: Turn-off time IIN to 10% VOUT: RL = 1 Ω , Tj =-40...+150°C Slew rate on 12) (10 to 30% VOUT ) RL = 1 Ω , TJ = 25 °C Slew rate off 12) (70 to 40% VOUT ) RL = 1 Ω , TJ = 25 °C RON -- -IL(ISO) IL(NOM) IL(Max) ton toff dV/dton -dV/dtoff 55 13.6 250 150 150 80 0.1 0.15 4.4 7.9 -10 70 17 --230 130 0.25 0.35 6.0 10.5 10.7 17 ----470 200 0.6 0.6 mΩ A A µs V/µs V/µs 7) 8 Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C. 10) not subject to production test, specified by design 11) TJ is about 105°C under these conditions. 12) See timing diagram on page 13. ) Page 3 of 15 2003-Oct-01 Data Sheet BTS6510 Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Inverse Load Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 °C: RON(inv) see page 9 Tj = 150 °C: Nominal inverse load current (Pins 1,2,6,7 to Tab) IL(inv) 11) VON = -0.5 V, Tc = 85 °C -VON Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150°C Operating Parameters Operating voltage (VIN = 0) 9, 13) 14 Undervoltage shutdown ) Undervoltage start of charge pump see diagram page 14 -55 -- 4.4 7.9 70 0.6 6.0 10.5 --- mΩ A V Vbb(on) VbIN(u) 5.0 1.5 3.0 60 62 --- -3.0 4.5 -66 15 25 34 4.5 6.0 --25 50 V V V V µA Overvoltage protection Ibb = 15 mA Standby current IIN = 0 15 ) VbIN(ucp) Tj =-40°C: VbIN(Z) Tj = 25...+150°C: Tj =-40...+25°C: Ibb(off) Tj = 150°C: ) If the device is turned on before a V -decrease, the operating voltage range is extended down to VbIN(u). bb For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit. 14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT ≈Vbb - 3 V. 15) See also VON(CL) in circuit diagram on page 8. 13 Page 4 of 15 2003-Oct-01 Data Sheet BTS6510 Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions16) Short circuit current limit (Tab to pins 1,2,6,7)17) VON = 6 V Tc =-40°C: Tc =25°C: Tc =+150°C: 18) Output clamp IL= 40 mA: (inductive load switch off) see diagram Ind. and overvolt. output clamp page 7 IL(SC) IL(SC) IL(SC) -VOUT(CL) -45 -14 110 130 115 17 -180 -20 A V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage),IL= 40 mA Thermal overload trip temperature Thermal hysteresis VON(CL) Tjt ∆Tjt 39 150 ----12 400 12 000 11 400 12 200 12 000 11 500 11 100 11 500 11 400 10 000 11 000 10 600 42 -10 -5.4 8.9 120 14 200 13 700 12 800 14 800 14 100 13 200 15 300 14 500 13 300 17 600 15 600 13 800 47 --32 7.0 12.3 -16 000 15 400 14 200 17 400 16 200 15 000 19 500 17 500 15 200 28 500 22 000 18 000 V °C K V mΩ Ω Reverse Battery Reverse battery voltage 19) -Vbb On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 °C: RON(rev) Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C: Integrated resistor in Vbb line Diagnostic Characteristics Current sense ratio, static on-condition, kILIS = IL : IIS20 , VON < 1.5 V ), VIS 4.0 V see diagram on page 11 Rbb IL = 90 A,Tj =-40°C: kILIS Tj =25°C: Tj =150°C: IL = 20 A,Tj =-40°C: Tj =25°C: Tj =150°C: IL = 10 A,Tj =-40°C: Tj =25°C: Tj =150°C: IL = 4 A,Tj =-40°C: Tj =25°C: Tj =150°C: IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): 16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 17 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit. The lifetime will be reduced under such conditions. 18) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 19) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 8. 20) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . Page 5 of 15 2003-Oct-01 Data Sheet BTS6510 Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max 6.5 --60 62 -----2 -66 -0.8 --0.5 ---500 1.5 80 Unit Sense current saturation Current sense leakage current IIS,lim IIN = 0: IIS(LL) mA µA V µs mA µA VIN = 0, IL ≤ 0: IIS(LH) Current sense overvoltage protection Tj =-40°C: VbIS(Z) Tj = 25...+150°C: Ibb = 15 mA 21) Current sense settling time ts(IS) Input Input and operating current (see diagram page 12) IIN(on) IN grounded (VIN = 0) Input current for turn-off 22 ) IIN(off) Truth Table Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L H H H L H L H L H L H L L H Output level L H H H L L L L H H 24 Z) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 23 VON(Fold back) L = "Low" Level H = "High" Level Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14) ) not subject to production test, specified by design 22) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than 21 500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. 23) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. 24) Power Transistor "OFF", potential defined by external impedance. Page 6 of 15 2003-Oct-01 Data Sheet BTS6510 Terms I bb VbIN 4 Vbb IL V bb RIN V IN Current sense status output Vbb R bb ZD VON OUT V Z,IS 3 IN PROFET IS 5 1,2,6,7 IS IIS R VOUT IS VIS I IN VbIS V IS I IS DS R IS Two or more devices can easily be connected in parallel to increase load current capability. Input circuit (ESD protection) V bb VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > 5 V. If you want measure load currents up to IL(M), RIS Vbb - 5 V . should be less than IL(M) / Kilis Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. V V bIN ZD R bb Inductive and overvoltage output clamp + Vbb VZ1 Z,IN IN I IN VON VZG OUT V IN PROFET DS IS VOUT When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ). VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -19 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19V referring to the OUT – potential the device will switch on, if diode DS is not used. Page 7 of 15 2003-Oct-01 Data Sheet BTS6510 Overvoltage protection of logic part + Vbb V R IN Z,IN Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. V Z,IS R bb IN Logic V OUT Version a: V IS PROFET bb IN Signal GND R IS RV V Z,VIS V bb OUT PROFET Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ nominal. Note that when overvoltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. IS V ZL Reverse battery protection - Vbb R bb Version b: IN OUT V bb IN Vbb PROFET OUT R IN Logic IS Power Transistor IS DS RIS RV Power GND RL V Zb D Signal GND RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse Version c: Sometimes a neccessary voltage clamp is battery protection in applications with Vbb above given by non inductive loads RL connected to the same 1 1 1 + + = 16 V19); recommended value: switch and eliminates the need of clamping circuit: RIN RIS RV 0.1A 1 0.1A if DS is not used (or = if DS is |Vbb| - 12V RIN |Vbb| - 12V used). V Vbb bb To minimize power dissipation at reverse battery RL operation, the summarized current into the IN and IS OUT IN PROFET pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by IS proper adjusting the current through RIS and RV. Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Infineon Technologies AG Page 8 of 15 2003-Oct-01 Data Sheet BTS6510 Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω V bb + IN Vbb Inverse load current operation L [µH] - IL IL[A] 10000 PROFET IS OUT - V OUT + IIS - V IN V IS R IS 1000 The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! 100 10 1 10 100 1000 Inductive load switch-off energy dissipation E bb E AS V V bb ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL Externally adjustable current limit If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC). { RIS ER V bb Vbb Energy stored in load inductance: EL = 1/ ·L·I 2 2 L RV IN PROFET OUT IS While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L (V + |VOUT(CL)|) 2·RL bb IL·RL R load IN Signal T1 Signal GND CV T2 R IS Power GND ln (1+ |V OUT(CL)| ) Infineon Technologies AG Page 9 of 15 2003-Oct-01 Data Sheet BTS6510 Options Overview Type BTS 6510P 550P 555 650P X X X X X X26) X 26 X) X X X26) X X X X Overtemperature protection with hysteresis Tj >150 °C, latch function25) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection with overtemperature shutdown switches off when VON>6 V typ. (when first turned on after approx. 180 µs) Overvoltage shutdown Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -19 V typ ) Latch except when V -V bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 26) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output. 25 Infineon Technologies AG Page 10 of 15 2003-Oct-01 Data Sheet BTS6510 Characteristics Current sense versus load current: IIS = f(IL), TJ= -40 ... +150 °C 30000 28000 26000 24000 22000 20000 18000 16000 14000 12000 10000 0 20 40 60 80 min 10000 0 20 40 60 80 max typ 14000 typ min 12000 16000 20000 18000 max Current sense ratio: IIS = f(IL), TJ= 25 °C 22000 IIS [mA] IL [A] Current sense ratio: KILIS = f(IL),TJ = -40°C kilis 30000 28000 26000 24000 22000 20000 18000 16000 typ 14000 12000 min 10000 0 20 40 60 80 max kILIS IL [A] Current sense ratio: KILIS = f(IL),TJ = 150°C kilis 22000 20000 18000 16000 max 14000 12000 min 10000 0 20 40 60 80 typ IL [A] IL [A] Infineon Technologies AG Page 11 of 15 2003-Oct-01 Data Sheet BTS6510 Typ. current limitation characteristic IL = f (VON, Tj ) IL [A] 450 400 350 300 250 Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] 1.6 1.4 1.2 1.0 0.8 200 150 100 50 0 0 VON(FB) 5 10 15 20 T J = -40°C T J = 150°C T J = 25°C 0.6 0.4 0.2 0 0 20 40 60 80 VbIN [V] VON [V] Typ. on-state resistance RON = f (Vbb, Tj ); IL = 20 A; VIN = 0 RON [mOhm] 14 12 10 8 6 25°C 4 2 0 0 5 10 15 40 Vbb [V] static dynamic Tj = 150°C 85°C -40°C Infineon Technologies AG Page 12 of 15 2003-Oct-01 Data Sheet BTS6510 Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2c: Switching an inductive load: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IL tslc(IS) t slc(IS) IL Load 1 Load 2 IIS IIS tson(IS) t soff(IS) t t The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 2b: Switching motors and lamps: Figure 3d: Short circuit: shut down by overtemperature detection with auto restart on cooling IIN IN IL IL(SCp) I L(SCr) VOUT IIL I IS V OUT >>0 V =0 OUT IIS t t Sense current saturation can occur at very high inrush currents (see IIS,lim on page Fehler! Textmarke nicht definiert.). Infineon Technologies AG Page 13 of 15 2003-Oct-01 Data Sheet BTS6510 Figure 4e: Overtemperature Reset if Tj