BTS730

BTS730 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. ! Highside switch (Bootstrap) ! Overtemperatur protection ! Short circuit / overload protection through pulse width reduction and overload shutdown ! Load dump protection ! Undervoltage and overvoltage shutdown with auto-restart and hysteresis ! Reverse battery protection 1) ! Timing frequency adjustable ! Controlled switching rise and fall times ! Maximum current internally limited ! Protection against loss of GND 2) ! Electrostatic discharge (ESD) protection ! Package: P-DSO-20-6 (SMD) Note: Switching frequency is programmed with an external capacitor Type Ordering Code Marking Package BTS730 Maximum Ratings Q67060-S7007-A2 - P-DSO-20-6 Parameter Active overvoltage prodection Short circuit current Input current (DC) Pin1 (C t) and pin19 ( V C) Operating temperature range Storage temperature range Power dissipation 3) Symbol V bb (AZ) I SC I Ct I VC Tj T stg P tot R th JC R th JA V ESD Values >40 self-limited 2 2 -40...+150 -50...+150 3 2 ≤35 ≤75 ≤1 Unit V mA mA °C W W K/W kV T a=25°C T a=85°C Thermal resistance chip-case 3) chip-ambient Electrostatic discharge capability (ESD) (Human Body Model) acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5K Ω; C=100pF 1) 2) 3) With 150 Ω resistor in signal GND connection. Potential between signal GND and load GND >0.5V Device on 50mm*50mm *1.5mm epoxy PCB FR4 with 6 cm2(one layer,70µm thick) copper area for Vbb conection, PCB is vertical without air blowing. Semiconductor Group 1 2003-Oct-01 BTS730 Block Diagram Overvoltage Prodtection Over / Undervoltage Detection Temperature Sensor (4,5,6,7) (14,15,16,17) Vbb Timing Generator Pulse - width Comparator Pump and Logic Current Limiting Voltage Regulator (18) (1) (20) (19) (2) (3) (8,9,10,11,12,13) GND Ct Timing Cap. 68nF Signal GND VREF 25k VC CB1 Bootstrap Capacitor 22nF C B2 OUT Load GND Pin Definitions and Funktions Pin 1 2 3 4,5,6,7 14,15,16,17 8,9,10 11,12,13 18 19 20 GND VC V REF Ground Voltage for PWM-Control Reference Voltage OUT Symbol Funktions Ct C B1 C B2 V bb Supply voltage (Leadframe connected) Output Timing capacitor for frequency Bootstrap capacitor Pin Configuration (top view) Ct C B1 C B2 V bb V bb V bb V bb OUT OUT OUT 1• 2 3 4 5 6 7 8 9 10 20 V REF 19 V C 18 GND 17 V bb 16 V bb 15 V bb 14 V bb 13 OUT 12 OUT 11 OUT Semiconductor Group 2 2003-Oct-01 BTS730 Electrical Characteristics at T C = 25 °C, Vbb = 12 V, unless otherwise specified. CBootstrap = 22nF Parameter On-state resistance I L=3A, V bb=12V Operating voltage T C = -40 ...+150°C Nominal current, calculated value ISO-standard:Vbb-VOUT ≤0.5V, TC = 85°C Load current limit V bb-V OUT> 1V, TC = -40 ...+150°C Undervoltage shutdown I L = 3A, TC = -40 ...+150°C Overvoltage shutdown I L = 3A, TC = -40 ...+150°C Max.output voltage (RMS) I L = 3A, V bb > 12 V T C = -40 ...+150°C Reference voltage I REF= 10mA, TC = -40 ...+150°C Reference current pin 18 (GND) to pin 20 (VREF) short Internal current consumption during operation, measured in PWM gap TC = -40 ...+150°C Bootstrap voltage, pin 2 ( B1) to pin 3 (C B2) C V bb = 12 V, TC = -40 ...+150°C PWM frequency T c = -40 ... +150 °C, C t = 68 nF Max. pulse duty factor I L = 3A, I L = 3A, V C=0V , (50% V OUT) D imin du/dt (on) du/dt (off) Tj 3 20 20 150 8 14 % 120 mV/µs 120 mV/µs °C V C=0V , (50% V OUT) Min. pulse duty factor Slew rate "on" 10 ... 90% I OUT Slew rate "off" 90 ... 10% I OUT Thermal overload trip temperature 1) Symbol min. R ON V bb I L-ISO I LLim V bb(LOW) V bb(HI) V RMSmax 3 17 12 5.9 1) Values typ. 20 4.2 18 max. Unit 70 mΩ 16.9 2) V 3 -A -A 5.4 V 19 V 14 V V REF I REF IR - 2 150 - 3V mA 5 mA VB f PWM D imax 50 95 - 10 - V 100 Hz 98 % Note: undervoltage shutdown 2) Note: overvoltage shutdown Semiconductor Group 3 2003-Oct-01 BTS730 Circuits A a gL gic p t n lo o -In u VC (19) V REF VC GD N (20) Voltage Regulator 2µ A (19) (18) P lse id Cm a to u -w th o p ra r 6V max. 2mA T g la W fo rian u r ave rm Generator Input C t (1) V bb 6µ A Ct GD N (1) (18) T in G n ra r im g e e to 6V max. 2mA V g S so (typ olta e en r ) Undervoltage Sensor Overvoltage Sensor +V bb +V bb V bb < 4.2 V Signal to the logic unit V bb > 18 V Signal to the logic unit GND GND Semiconductor Group 4 2003-Oct-01 BTS730 Application Note Dimming of dashboard lighting 4,5,6,7 14,15,16,17 20 + Vbb 220nF V REF Vbb 25 k# 19 BTS730 VC GND 18 Ct 1 68nF CB1 2 CB2 OUT 3 8,9,10 11,12,13 22nF Load 150 # 150 # Resistor for reverse battery and load dump prodection Package Outline P-DSO-20-6 Dimensions in mm Dimensions in mm Semiconductor Group 5 2003-Oct-01 BTS730 mΩ 140 Typ.on-state resistance R ON= f (T C ) A 30 Typ. Load current limit I LLim = f (T C ) 120 25 100 20 80 15 60 10 40 20 -50 -25 0 25 50 75 100 125 150 5 -50 -25 0 25 50 75 100 125 150 T C °C T C °C V 6,0 Typ. undervoltage shutdown V bb(LOW) = f (T C) V 20,0 Typ. overvoltage shutdown V bb(HI) = f (T C ) 5,5 19,5 5,0 19,0 4,5 18,5 4,0 18,0 3,5 17,5 3,0 -50 -25 0 25 50 75 100 125 150 17,0 -50 -25 0 25 50 75 100 125 150 T C °C T C °C Semiconductor Group 6 2003-Oct-01 BTS730 % 15 14 13 12 11 10 9 8 7 6 5 -50 Typ. min. puls duty factor D imin = f (T C ) % 100 Typ. max. puls duty factor D imax = f (T C ) 99 98 97 96 95 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T C °C T C °C Hz 100 Typ. PWM Frequency f PWM = f (T C ) V 14,0 Typ. max. output voltage V RMSmax = f (T C ), Vbb > 12V 90 13,5 80 13,0 70 12,5 60 50 -50 -25 0 25 50 75 100 125 150 12,0 -50 -25 0 25 50 75 100 125 150 T C °C T C °C Semiconductor Group 7 2003-Oct-01