BTS7960P

D a ta S he et, Re v . 1 .1, De c em ber 2 00 4 BTS 7960 High Current PN Half Bridge NovalithIC TM 43 A, 7 mΩ + 9 mΩ Au t o mo t i ve P o we r Never stop thinking. High Current PN Half Bridge BTS 7960 Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Basic Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 4.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . 16 4.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 4.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . 17 4.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . 20 5 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 7 Package Outlines P-TO-263-7 8 Package Outlines P-TO-220-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Data Sheet 1 Rev. 1.1, 2004-12-07 High Current PN Half Bridge NovalithICTM BTS 7960B BTS 7960P Product Summary The BTS 7960 is a fully integrated high current half bridge for motor drive applications. It is part of the NovalithICTM family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. BTS 7960B P-TO-263-7 BTS 7960P P-TO-220-7 Basic Features • • • • • • • • • • • Path resistance of typ. 16 mΩ @ 25 °C Low quiescent current of typ. 7 µA @ 25 °C PWM capability of up to 25 kHz combined with active freewheeling Switched mode current limitation for reduced power dissipation in overcurrent Current limitation level of 43 A typ. Status flag diagnosis with current sense capability Overtemperature shut down with latch behaviour Overvoltage lock out Undervoltage shut down Driver circuit with logic level inputs Adjustable slew rates for optimized EMI Ordering Code Q67060-S6160 on request 2 Type BTS 7960B BTS 7960P Data Sheet Package P-TO-263-7 P-TO-220-7 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Overview 1 Overview The BTS 7960 is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 can be combined with other BTS 7960 to form H-bridge and 3-phase drive configurations. 1.1 Block Diagram BTS 7960 HS base-chip VS Top-chip IN INH SR IS Gate Driver Dead Time Gen. Slew Rate Adj. UV Shut Down OV Lock Out OT Shut Down Current Lim. Diagnosis Current Sense OUT LS base-chip GND Figure 1 Block Diagram Data Sheet 3 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Overview 1.2 Terms Following figure shows the terms used in this data sheet. VVS , VS IIN V IN VIN H V SR VIS I IN H ISR I IS IN VS I VS , -I D (H S) V D S(H S) INH BTS 7960 OUT I OU T , I L VSD (L S) V OU T SR IS GND I GN D , I D (L S) Figure 2 Terms Data Sheet 4 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Pin Configuration 2 2.1 Pin Configuration Pin Assignment BTS 7960B P-TO-263-7 BTS 7960P P-TO-220-7 8 8 12 3 4 56 7 246 13 57 Figure 3 Pin Assignment BTS 7960B and BTS 7960P (top view) 2.2 Pin 1 2 3 4,8 5 Pin Definitions and Functions Symbol GND IN INH OUT SR I/O I I O I Function Ground Input Defines whether high- or lowside switch is activated Inhibit When set to low device goes in sleep mode Power output of the bridge Slew Rate The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND Current Sense and Diagnosis Supply 6 7 IS VS O - Bold type: pin needs power wiring Data Sheet 5 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Maximum Ratings 3 Pos Maximum Ratings Parameter Symbol Limits min max 45 5.3 401) 601) 601) 1.0 45 45 150 150 V V A A A V V V °C °C Unit Test Condition -40 °C < Tj < 150 °C (unless otherwise specified) Electrical Maximum Ratings 3.0.1 3.0.2 3.0.3 3.0.4 3.0.5 3.0.6 3.0.7 3.0.8 3.0.9 Supply voltage VVS Logic Input Voltage VIN VINH HS/LS continuous drain ID(HS) ID(LS) current HS pulsed drain current ID(HS) ID(LS) LS pulsed drain current Voltage at SR pin VSR Voltage between VS and VVS -VIS IS pin Voltage at IS pin Junction temperature -0.3 -0.3 -40 -60 -60 -0.3 -0.3 -20 -40 -55 TC < 85°C switch active TC < 85°C tpulse = 10ms VIS Tj Tstg VESD Thermal Maximum Ratings 3.0.10 Storage temperature ESD Susceptibility 3.0.11 ESD susceptibility HBM IN, INH, SR, IS OUT, GND, VS 1) kV -2 -6 2 6 according to EIA/ JESD 22-A 114B Maximum reachable current may be smaller depending on current limitation level Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the device. Exposure to maximum rating conditions for extended periods of time may affect device reliability Data Sheet 6 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics 4 4.1 Block Description and Characteristics Supply Characteristics – 40 °C < Tj < 150 °C, 8 V < VS < 18 V, IL = 0A (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. General 4.1.1 4.1.2 Operating Voltage Supply Current max. 27.5 V 3 mA VS IVS(on) 5.5 – – 2 VINH = 5 V VIN = 0 V or 5 V RSR=0 Ω DC-mode normal operation (no fault condition) 4.1.3 Quiescent Current IVS(off) – 7 15 µA – – 65 µA VINH = 0 V VIN = 0 V or 5 V Tj