BTS7970B

D a t a S h e e t , R e v . 2 . 0 , Ma y 2 0 0 6 B T S 79 7 0 B H ig h C u r r e n t P N H a lf B r i d g e N o v a l it h I C TM 68 A, 7 mΩ + 9 mΩ typ. Automotive Power Never stop thinking. High Current PN Half Bridge BTS 7970B Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Basic Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Maximum Single Pulse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 1 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 1.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 1.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 1.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 1.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 12 1.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 1.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 1.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . 17 1.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 1.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . 18 1.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 1.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . 21 2 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 3.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 4 Package Outlines P-TO-263-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Data Sheet 1 Rev. 2.0, 2006-05-09 High Current PN Half Bridge NovalithICTM BTS 7970B Product Summary BTS 7970B The BTS 7970B is a fully integrated high current half P-TO-263-7 bridge for motor drive applications. It is part of the NovalithICTM family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS 7970B provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. Basic Features • • • • • • • • • • • Path resistance of typ. 16 mΩ @ 25 °C Low quiescent current of typ. 7 µA @ 25 °C PWM capability of up to 25 kHz combined with active freewheeling Switched mode current limitation for reduced power dissipation in overcurrent Current limitation level of 68 A typ. / 50 A min. Status flag diagnosis with current sense capability Overtemperature shut down with latch behaviour Overvoltage lock out Undervoltage shut down Driver circuit with logic level inputs Adjustable slew rates for optimized EMI Type BTS 7970B Data Sheet 2 Package P-TO-263-7 Rev. 2.0, 2006-05-09 High Current PN Half Bridge BTS 7970B Overview 1 Overview The BTS 7970B is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS 7970B can be combined with other BTS 7970B to form H-bridge and 3-phase drive configurations. 1.1 Block Diagram BTS 7970B HS base-chip VS Top-chip IN INH SR IS Gate Driver Dead Time Gen. Slew Rate Adj. UV Shut Down OV Lock Out OT Shut Down Current Lim. Diagnosis Current Sense OUT LS base-chip GND Figure 1 Block Diagram Data Sheet 3 Rev. 2.0, 2006-05-09 High Current PN Half Bridge BTS 7970B Overview 1.2 Terms Following figure shows the terms used in this data sheet. VVS , VS IIN V IN VIN H V SR VIS I IN H ISR I IS IN VS I VS , -I D (H S) V D S(H S) INH BTS 7970B OUT I OU T , I L VSD (L S) V OU T SR IS GND I GN D , I D (L S) Figure 2 Terms Data Sheet 4 Rev. 2.0, 2006-05-09 High Current PN Half Bridge BTS 7970B Pin Configuration 2 2.1 Pin Configuration Pin Assignment BTS 7970B P-TO-263-7 8 12 3 4 56 7 Figure 3 Pin Assignment BTS 7970B and (top view) 2.2 Pin 1 2 3 4,8 5 Pin Definitions and Functions Symbol GND IN INH OUT SR I/O I I O I Function Ground Input Defines whether high- or lowside switch is activated Inhibit When set to low device goes in sleep mode Power output of the bridge Slew Rate The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND Current Sense and Diagnosis Supply 6 7 IS VS O - Bold type: Pin needs power wiring Data Sheet 5 Rev. 2.0, 2006-05-09 High Current PN Half Bridge BTS 7970B Maximum Ratings 3 Pos Maximum Ratings Parameter Symbol Limits min max 45 5.3 441) 901) 901) 55 60 1.0 45 45 150 150 V V A A A A A V V V °C °C kV -2 -6 2 6 HBM2) Unit Test Condition -40 °C < Tj < 150 °C (unless otherwise specified) Electrical Maximum Ratings 3.0.1 3.0.2 3.0.3 3.0.4 3.0.5 3.0.6 3.0.7 3.0.8 3.0.9 Supply voltage Logic Input Voltage HS/LS continuous drain current HS pulsed drain current LS pulsed drain current PWM current Voltage at SR pin IS pin Voltage at IS pin VVS VIN VINH ID(HS) ID(LS) ID(HS) ID(LS) IOUT1) -0.3 -0.3 -44 -90 -90 -55 -60 TC < 85°C switch active TC < 85°C tpulse = 10ms single pulse f = 1kHz, DC = 50% f = 20kHz, DC = 50% VSR -0.3 Voltage between VS and VVS -VIS -0.3 VIS Tj Tstg VESD -20 -40 -55 Thermal Maximum Ratings 3.0.10 Junction temperature 3.0.11 Storage temperature ESD Susceptibility 3.0.12 ESD susceptibility IN, INH, SR, IS OUT, GND, VS 1) 2) Maximum reachable current may be smaller depending on current limitation level ESD susceptibility HBM according to EIA/JESD 22-A 114B Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the device. Exposure to maximum rating conditions for extended periods of time may affect device reliability Data Sheet 6 Rev. 2.0, 2006-05-09 High Current PN Half Bridge BTS 7970B Maximum Ratings Maximum Single Pulse Current 100 90 80 70 I max [A] 60 50 40 30 20 10 0 1,0E-03 1,0E-02 1,0E-01 t pulse[s] 1,0E+00 1,0E+01 Figure 4 BTS 7970B Maximum Single Pulse Current This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device. Data Sheet 7 Rev. 2.0, 2006-05-09 High Current PN Half Bridge BTS 7970B Block Description and Characteristics 4 4.1 Block Description and Characteristics Supply Characteristics – 40 °C < Tj < 150 °C, 8 V < VS < 18 V, IL = 0A (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. General 4.1.1 4.1.2 Operating Voltage Supply Current max. 28 3 V mA VS IVS(on) 5.5 – – 2 VS increasing VINH = 5 V VIN = 0 V or 5 V RSR=0 Ω DC-mode normal operation (no fault condition) 4.1.3 Quiescent Current IVS(off) – 7 15 µA – – 65 µA VINH = 0 V VIN = 0 V or 5 V Tj