BTS933

HITFET®BTS 933 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Maximum current adjustable with external resistor • Current sense • Status feedback with external input resistor • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS R DS(on) I D(lim) I D(ISO) EAS 60 50 3 7 V mΩ A A 2000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. V bb General Description + LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M 2 3 1 IN 4 CC Overtemperature protection ESD R CC Overload protection Short circuit Short circuit protection protection Source 5 HITFET ® Semiconductor Group Page 1 02.12.1998 BTS 933 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.2V ≤ V IN ≤ 10V 1) Symbol Value 60 15 50 Unit V VDS VDS(SC) I IN no limit | IIN | ≤ 2 mA VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj T stg Ptot EAS - 40 ... +150 - 55 ... +150 90 2000 3000 °C W mJ V T C = 25 °C Unclamped single pulse inductive energy I D(ISO) = 7 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection V LoadDump2) = V A + VS VIN=low or high; V A=13.5 V t d = 400 ms, RI = 2 Ω, ID=0,5*7A t d = 400 ms, RI = 2 Ω, ID= 7A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 VLD 90 74 E 40/150/56 Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) RthJC RthJA RthJA 1.4 75 45 K/W 1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical without blown air. Semiconductor Group Page 2 02.12.1998 BTS 933 Electrical Characteristics Parameter at Tj=25°C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 30 150 2500 max. 73 10 2.2 55 350 4000 V µA V µA Unit VDS(AZ) I DSS VIN(th) IIN(1) 60 1.3 60 1000 T j = - 40 ...+ 150°C, ID = 10 mA Off state drain current VDS = 32 V, T j = -40...+150 °C, V IN = 0 V Input threshold voltage I D = 1,4 mA Input current - normal operation, ID 2 mA @ VIN>10V. t0: tm: t1: t2: Turn on into a short circuit Measurementpoint for ID(lim) Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Semiconductor Group Page 5 02.12.1998 BTS 933 Maximum allowable power dissipation Ptot = f(Tc) BTS 933 On-state resistance RON = f(Tj ); ID=7A; VIN =10V 100 100 W mΩ 80 80 RDS(on) 70 70 60 50 40 30 20 10 0 -50 typ. max. Ptot 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 160 -25 0 25 50 75 100 °C 150 Tj On-state resistance RON = f(Tj ); ID= 7A; VIN=5V 120 Typ. input threshold voltage VIN(th) = f(Tj); ID =1,4A; VDS=12V mΩ 100 2.2 V 1.8 1.6 RDS(on) 90 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 °C typ. max. VIN(th) 150 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 °C 150 Tj Tj Page 6 Semiconductor Group 02.12.1998 BTS 933 Typ. transfer characteristics I D = f(V IN); V DS=12V; Tj=25°C 70 Typ. short circuit current IDlim = f(Tj); RCC =0Ω, VDS =12V Parameter: VIN 100 A A 50 10V 8V 6V ID ID 40 60 30 40 5V 20 4V 20 10 3V 0 0 2 4 6 V 10 0 -50 -25 0 25 50 75 100 °C 150 VIN Tj Typ. output characteristic ID = f(VDS); T j=25°C Parameter: VIN 70 Safe Operating Area ID(SC) = f(VDS ); Tj =25°C 120 10V A A 50 6V 80 ID 40 5V ID 60 4V 30 40 20 10 Vin=3V 20 0 0 1 2 3 4 V 6 0 0 10 20 30 V 50 VDS VDS Page 7 Semiconductor Group 02.12.1998 BTS 933 Typ. current limit versus R CC I D(lim) = f(RCC); T j=25°C Parameter: VIN 80 A 10V Typ. current sense characteristics VCC = f(ID); VIN=10V Parameter: RCC , Tj 650 mV 56 Ohm 22 Ohm 550 60 500 450 no Rcc ID 50 5V VCC 400 350 10 Ohm 40 300 30 250 200 20 150 100 50 00 10 10 1 125°C 25°C 10 10 2 10 3 Ω 10 RCC 4 0 0 5 10 15 20 25 30 35 40 A 50 ID Transient thermal impedance ZthJC = f(tP) Parameter: D=t P/T 10 1 K/W 10 0 D=0.5 Z thJC 0.2 10 -1 0.1 0.05 0.02 0.01 10 -2 0.005 0 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Semiconductor Group Page 8 02.12.1998 BTS 933 Application examples: Current Sense Features and Status Signals IN D S V bb µC V CC HITFET CC RCC IN open load thermal shutdown V cc V cc reached triptemperature The accuray of Vcc is at each temperature about ±10 % Status signal of thermal shutdown by monitoring input current R St IN D S V bb µC V IN HITFET CC ∆V V IN thermal shutdown ∆V = RST *IIN(3) Semiconductor Group Page 9 02.12.1998 BTS 933 Package and ordering code all dimensions in mm Ordering code: Q67060-S6701-A4 Ordering Code: Q67060-S6701-A2 Ordering Code: Q67060-S6701-A3 Semiconductor Group Page 10 02.12.1998 BTS 933 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. 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Semiconductor Group Page 11 02.12.1998