BUP311D

Infineon IGBT With Antiparallel Diode BUP 311D Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Pin 1 G Type BUP 311D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code ON REQUEST C67078-A4102 Pin 3 E VCE IC Package TO-218 AB 1200V A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 20 12 TC = 25 °C TC = 100 °C Pulsed collector current, tp = 1 ms ICpuls 40 TC = 25 °C Diode forward current IF tbd TC = 100 °C Pulsed diode current, tp = 1 ms IFpuls tbd TC = 25 °C Power dissipation Ptot 125 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 May-06-1999 Infineon Maximum Ratings Parameter Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, junction - case Diode thermal resistance, chip case Symbol Values BUP 311D Unit °C - Tj Tstg - -55 ... + 150 -55 ... + 150 55 / 150 / 56 RthJC RthJCD ≤1 ≤ 2.5 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 3.4 4.3 6.5 3 3.7 - V VGE = VCE, IC = 0.3 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 8 A, Tj = 25 °C VGE = 15 V, IC = 8 A, Tj = 125 °C VGE = 15 V, IC = 16 A, Tj = 25 °C VGE = 15 V, IC = 16 A, Tj = 125 °C Zero gate voltage collector current ICES 0.4 mA nA 120 VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V Semiconductor Group 2 May-06-1999 Infineon AC Characteristics Transconductance BUP 311D gfs 4 600 60 38 - S pF tbd tbd tbd VCE = 20 V, IC = 8 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit td(on) 55 tbd ns VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150 Ω Rise time tr 50 tbd VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150 Ω Turn-off delay time td(off) 380 tbd VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150 Ω Fall time tf 80 tbd VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150 Ω Semiconductor Group 3 May-06-1999 Infineon Free-Wheel Diode Diode forward voltage BUP 311D VF tbd tbd tbd - V IF = 8 A, VGE = 0 V, Tj = 25 °C IF = 8 A, VGE = 0 V, Tj = 125 °C Reverse recovery time trr tbd tbd ns IF = 8 A, VR = -600 V, VGE = 0 V diF/dt = -400 A/µs, Tj = 25 °C Reverse recovery charge Qrr µC IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -400 A/µs Tj = 25 °C Tj = 125 °C tbd tbd tbd tbd Semiconductor Group 4 May-06-1999 Infineon Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 130 W 110 BUP 311D Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 22 A Ptot 100 90 80 70 60 50 40 IC 18 16 14 12 10 8 6 30 20 10 0 0 20 40 60 80 100 120 °C 160 4 2 0 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 t = 15.0µs p Transient thermal impedance Zth JC = ƒ(tp ) parameter: D = tp / T 10 1 IGBT K/W A IC 10 1 100 µs ZthJC 10 0 10 -1 D = 0.50 0.20 10 0 1 ms 0.10 10 -2 single pulse 10 ms 0.05 0.02 0.01 10 -1 0 10 10 1 10 2 DC 3 10 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 5 May-06-1999 Infineon Typ. output characteristics Typ. output characteristics BUP 311D IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C 20 A IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 20 A 17V 15V 13V 11V 9V 7V IC 16 14 12 10 8 6 4 2 0 0 IC 16 14 12 10 8 6 4 2 0 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 25 A 22 IC 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 6 May-06-1999 Infineon Typ. switching time Typ. switching time BUP 311D t = f (IC) , inductive load , Tj = 125°C par.:VCE=600V, VGE = ±15V, RG =153Ω 10 3 t = f (RG) , inductive load , Tj = 125°C par.:VCE=600V, VGE = ±15V, IC =8 A 10 3 tdoff t ns tdoff t ns 10 2 tr tf tdon 10 2 tf tdon tr 10 1 0 4 8 12 16 20 24 A IC 30 10 1 0 50 100 150 200 250 300 350 400 RG Ω 500 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.:VCE=600V, VGE = ±15V, RG =153Ω 10 mWs E 8 7 6 5 4 3 2 Eoff 1 0 0 Eon E = f (RG) , inductive load , Tj = 125°C par.:VCE=600V, VGE = ±15V, IC =8 A 10 mWs E 8 7 6 5 4 3 Eon 2 1 Eon 4 8 12 16 20 24 A 30 IC 0 0 50 100 150 200 250 300 350 400 RG Ω 500 Semiconductor Group 7 May-06-1999 Infineon Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 15 A 20 V pF BUP 311D Typ. capacitances C = f (VCE) 10 4 VGE 16 14 12 10 8 C 10 3 Ciss 10 2 6 4 2 0 0 10 1 0 C oss C rss -4 -8 -12 -16 -20 -28 5 10 15 20 25 30 Q Gate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 2.5 ICsc/IC(90°C) ICpuls/I C 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 8 May-06-1999 Infineon Typ. forward characteristics BUP 311D IF = f (VF) parameter: Tj 30 A 26 Transient thermal impedance Zth JC = ƒ(tp ) parameter: D = tp / T 10 1 Diode K/W IF 24 22 20 18 16 14 12 10 8 6 4 2 0 0.0 ZthJC 10 0 Tj=125°C Tj=25°C D = 0.50 0.20 10 -1 0.10 0.05 0.02 single pulse 0.01 0.5 1.0 1.5 2.0 V 3.0 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 9 May-06-1999