BUZ102SE3045A

BUZ 102S SIPMOS Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 55 52 V A Enhancement mode RDS(on) 0.018 Ω • Avalanche rated • dv/dt rated • 175 ˚C operating temperature Type BUZ102S BUZ102S E3045A BUZ102S E3045 Package Ordering Code Packaging Tube Tape and Reel Tube Pin 1 G Pin 2 D Pin 3 S P-TO220-3-1 Q67040-S4011-A2 P-TO263-3-2 Q67040-S4011-A6 P-TO263-3-2 Q67040-S4011-A5 Maximum Ratings, at Tj = 25 ˚C unless unless specified Parameter Symbol Continuous drain current Value 52 37 208 245 12 6 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 52 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 52 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 120 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Book 1 05.99 BUZ 102S Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 1.25 62 62 40 K/W Unit RthJC RthJA RthJA - Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 µA 0.1 10 1 100 100 nA Ω 0.0155 0.018 V Unit V(BR)DSS VGS(th) IDSS 55 2.1 VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage, VGS = VDS ID = 90 µA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 150 ˚C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 37 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Book 2 05.99 BUZ 102S Electrical Characteristics , at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter min. Dynamic Characteristics Transconductance typ. 28 1220 410 210 12 max. 1525 515 265 18 Unit g fs Ciss Coss Crss td(on) 10 - S pF VDS≥2*ID*RDS(on)max , ID = 37 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 10 V, ID = 52 A, RG = 6.8 Ω Rise time tr - 22 33 VDD = 30 V, VGS = 10 V, ID = 52 A, RG = 6.8 Ω Turn-off delay time td(off) - 30 45 VDD = 30 V, VGS = 10 V, ID = 52 A, RG = 6.8 Ω Fall time tf - 25 40 VDD = 30 V, VGS = 10 V, ID = 52 A, RG = 6.8 Ω Data Book 3 05.99 BUZ 102S Electrical Characteristics , at T j = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 8 23 45 5.9 max. 12 34.5 70 V nC Unit Qgs Qgd Qg V(plateau) - VDD = 40 V, ID = 52 A Gate to drain charge VDD = 40 V, ID = 52 A Gate charge total VDD = 40 V, ID = 52 A, V GS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 52 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.2 70 0.15 52 208 1.7 105 0.25 A TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage V ns µC VGS = 0 V, I F = 104 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Book 4 05.99 BUZ 102S Power Dissipation Drain current Ptot = f (TC) BUZ102S ID = f (TC ) parameter: VGS ≥ 10 V BUZ102S 2.8 W 60 A 2.4 2.2 50 45 2.0 Ptot 1.8 40 ID 100 120 140 160 ˚C 190 1.6 1.4 1.2 1.0 0.8 35 30 25 20 15 0.6 0.4 0.2 0.0 0 20 40 60 80 10 5 0 0 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 ˚C 10 3 BUZ102S ZthJC = f (tp ) parameter : D = tp /T 10 1 BUZ102S K/W A tp = 19.0 µs 10 0 DS 100 µs = V Z thJC 10 2 10 -1 ID /I D DS (o n) 10 -2 D = 0.50 0.20 10 1 1 ms R 10 -3 0.10 0.05 10 ms single pulse 10 -4 0.02 0.01 DC 10 0 -1 10 0 1 2 10 10 V 10 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Data Book 5 05.99 BUZ 102S Typ. output characteristics I D = f (VDS) parameter: tp = 80 µs BUZ102S Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS BUZ102S 130 A Ptot = 120W l 0.060 Ω kj i VGS [V] a 4.0 b c d e f g h 110 100 90 0.050 0.045 hb c 4.5 g d e 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS(on) 5.0 ID 80 70 60 e f 0.040 0.035 0.030 0.025 0.020 k i j l f g h i j 50 40 30 20 b c dk l 0.015 0.010 VGS [V] = 10 a 0.005 V b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 VDS 0.000 0 20 40 60 80 A 120 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f(ID ); Tj = 25˚C parameter: gfs 35 VDS ≥ 2 x I D x RDS(on) max 80 S A 25 gfs 40 20 0 2 V ID 20 15 10 5 3 4 5 7 0 0 10 20 30 40 50 A 70 VGS ID Data Book 6 05.99 BUZ 102S Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 37 A, VGS = 10 V BUZ102S VGS(th) = f (Tj) parameter : VGS = V DS, ID = 90 µA 5.0 V 4.4 0.065 Ω 0.055 4.0 VGS(th) 0.050 RDS(on) 3.6 3.2 2.8 0.045 0.040 0.035 2.4 0.030 0.025 0.020 1.2 0.015 0.8 0.010 0.4 0.005 0.000 -60 0.0 -60 -20 20 60 100 140 ˚C max 98% typ 2.0 1.6 typ min -20 20 60 100 140 ˚C 200 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 3 BUZ102S A pF 10 2 Ciss C 10 3 IF 10 1 Coss Tj = 25 ˚C typ Tj = 175 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) Crss 10 2 0 10 20 V 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Data Book 7 05.99 BUZ 102S Avalanche Energy EAS = f (Tj) parameter: ID = 52 A, V DD = 25 V Typ. gate charge VGS = f (QGate ) parameter: ID puls = 52 A BUZ102S RGS = 25 Ω 260 mJ 16 V 220 200 180 12 VGS EAS 160 140 10 0,2 VDS max 8 0,8 VDS max 120 100 80 60 40 20 0 20 40 60 80 100 120 140 ˚C 6 4 2 180 0 0 10 20 30 40 50 Tj 70 nC Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ102S 66 V 64 V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 140 ˚C 200 Tj Data Book 8 05.99