BUZ111SE3045

SIPMOS® Power Transistor Features • N channel • BUZ 111S VDS ID 55 80 V A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current Enhancement mode RDS(on) 0.008 Ω • Avalanche rated • dv/dt rated • 175˚C operating temperature Type BUZ111S BUZ111S E3045A BUZ111S E3045 Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4003-A2 Tube P-TO263-3-2 Q67040-S4003-A6 Tape and Reel P-TO263-3-2 Q67040-S4003-A5 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 80 320 700 30 6 kV/µs mJ Unit A ID TC = 25 ˚C, 1) TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 300 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 BUZ 111S Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 0.5 62 62 40 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 µA 0.1 10 1 100 100 nA Ω 0.0065 0.008 V Unit V(BR)DSS VGS(th) I DSS 55 2.1 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 240 µA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, T j = 25 ˚C VDS = 50 V, VGS = 0 V, T j = 150 ˚C Gate-source leakage current I GSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 80 A 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BUZ 111S Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 73 3600 1100 550 25 max. 4500 1375 690 37 ns S pF Unit g fs Ciss Coss Crss t d(on) 30 - VDS≥2*ID*RDS(on)max , ID = 80 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 2.4 Ω Rise time tr - 30 45 VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 2.4 Ω Turn-off delay time t d(off) - 65 95 VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 2.4 Ω Fall time tf - 40 60 VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 2.4 Ω Data Sheet 3 05.99 BUZ 111S Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 18 61 125 5.45 max. 27 91.5 185 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 40 V, ID = 80 A Gate to drain charge VDD = 40 V, ID = 80 A Gate charge total VDD = 40 V, ID = 80 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 80 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.25 105 0.29 80 320 1.8 160 0.45 A TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage V ns µC VGS = 0 V, I F = 160 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BUZ 111S Power Dissipation Drain current Ptot = f (TC) BUZ111S ID = f (TC ) parameter: VGS ≥ 10 V BUZ111S 320 W 90 A 240 70 60 Ptot ID 50 40 30 20 10 0 0 100 120 140 160 ˚C 190 200 160 120 80 40 0 0 20 40 60 80 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 ˚C 10 3 BUZ111S ZthJC = f (tp ) parameter : D = tp /T 10 1 BUZ111S K/W A D tp = 29.0 µs 10 0 R DS Z thJC 10 2 V DS /I ID (o n) = 100 µs 10 -1 10 -2 D = 0.50 1 ms 0.20 10 -3 10 1 10 ms 0.10 0.05 0.02 DC 10 -4 single pulse 0.01 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 111S Typ. output characteristics I D = f (VDS) parameter: tp = 80 µs BUZ111S Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS BUZ111S 190 A Ptot = 300W l k j ih g f VGS [V] a 4.0 b 4.5 0.026 Ω b c d e 160 140 e 0.022 0.020 RDS(on) c d e 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 ID 120 100 80 60 40 b c 0.018 0.016 0.014 0.012 f f dg h i j k l 0.010 0.008 0.006 0.004 VGS [V] = b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 g h j l i k 20 a 0.002 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 VDS 0.000 0 20 40 60 80 100 120 A 150 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max 80 A Typ. forward transconductance gfs = f(ID ); Tj = 25˚C parameter: gfs 75 S 60 60 55 50 gfs V ID 50 45 40 35 40 30 30 25 20 20 15 10 10 5 0 0 1 2 3 4 6 0 0 10 20 30 40 50 A 65 VGS ID Data Sheet 6 05.99 BUZ 111S Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V BUZ111S VGS(th) = f (Tj) parameter : VGS = V DS, ID = 240 µA 5.0 V 4.4 0.028 Ω 0.024 4.0 0.022 VGS(th) RDS(on) 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 -60 3.6 3.2 2.8 2.4 max 98% typ 2.0 1.6 1.2 0.8 min typ 0.4 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 140 ˚C 200 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 3 BUZ111S A Ciss pF 10 2 10 3 Coss Crss IF 10 1 C Tj = 25 ˚C typ Tj = 175 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) 10 2 0 10 20 V 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Data Sheet 7 05.99 BUZ 111S Avalanche Energy EAS = f (Tj) parameter: ID = 80 A, V DD = 25 V Typ. gate charge VGS = f (QGate ) parameter: ID puls = 80 A BUZ111S RGS = 25 Ω 750 16 V mJ 12 VGS EAS 450 10 0,2 VDS max 8 0,8 VDS max 300 6 4 150 2 0 20 40 60 80 100 120 140 ˚C 180 0 0 20 40 60 80 100 120 140 Tj nC 180 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ111S 66 V 64 V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 140 ˚C 200 Tj Data Sheet 8 05.99