BUZ21

SIPMOS ® Power Transistor BUZ 21 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 21 A TC = 25 ˚C Pulsed drain current IDpuls 84 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 21 11 mJ ID = 21 A, VDD = 25 V, RGS = 25 Ω L = 340 µH, Tj = 25 ˚C Gate source voltage Power dissipation 100 VGS Ptot ± 20 75 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.67 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 21 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 100 V, VGS = 0 V, Tj = 25 ˚C VDS = 100 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.065 0.085 Ω VGS = 10 V, ID = 13 A Data Sheet 2 05.99 BUZ 21 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 8 11 - S VDS≥ 2 * ID * RDS(on)max, ID = 13 A Input capacitance Ciss 1000 1300 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 300 530 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 150 240 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time 25 40 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time 50 75 td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time 160 210 tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω 80 110 Data Sheet 3 05.99 BUZ 21 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 21 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 84 V 1.3 1.7 ns 150 µC 0.48 - TC = 25 ˚C Inverse diode forward voltage VSD VGS = 0 V, IF = 42 A Reverse recovery time trr VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Data Sheet 4 05.99 BUZ 21 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 22 A 80 W Ptot ID 60 18 16 14 12 50 40 10 30 8 6 20 4 10 0 0 2 0 0 20 40 60 80 100 120 ˚C 160 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 A K/W ID 10 2 tp = 22.0µs ZthJC 10 0 /ID = VD S 100 µs RD 10 1 o S( n) 1 ms 1 0 -1 D = 0.50 10 ms 0.20 0.10 10 0 DC 1 0 -2 0.05 0.02 0.01 single pulse 10 -1 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 21 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 50 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 0.26 a b c d e Ptot = 75W l kj i h VGS [V] a 4.0 Ω 0.22 ID 40 g b c d 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS (on) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 V [V] = GS 0.02 a 5.0 4.5 4.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 35 30 f e f g 25 e h i j f g h i j 20 15 10 5 0 0 a c b d k l 1 2 3 4 5 6 7 V 9 0.00 0 5 10 15 20 25 30 35 A 45 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 60 A 50 ID VDS≥2 x ID x RDS(on)max 20 S gfs 16 14 45 40 35 30 25 20 12 10 8 6 15 4 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 2 0 0 10 10 20 30 40 A ID 55 Data Sheet 6 05.99 BUZ 21 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 13 A, VGS = 10 V 0.28 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.24 98% RDS (on)0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -60 VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% typ 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C A IF 10 0 Ciss 10 1 Coss 1 0 -1 Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 21 Avalanche energy EAS = ƒ(Tj) parameter: ID = 21 A, VDD = 25 V RGS = 25 Ω, L = 340 µH 110 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 36 A 16 V EAS 90 80 70 60 VGS 12 0,2 VDS max 0,8 VDS max 10 8 50 40 30 20 2 10 0 20 40 60 80 100 120 ˚C 160 0 0 10 20 30 40 50 nC 70 6 4 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 V(BR)DSS 14 1 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99