BUZ30A

BUZ 30A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 30A 200 V 21 A 0.13 Ω TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 21 A TC = 26 ˚C Pulsed drain current IDpuls 84 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 21 12 mJ ID = 21 A, VDD = 50 V, RGS = 25 Ω L = 1.53 mH, Tj = 25 ˚C Gate source voltage Power dissipation 450 VGS Ptot ± 20 125 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤1 75 E 55 / 150 / 56 K/W Data Sheet 1 06.99 BUZ 30A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.1 0.13 Ω VGS = 10 V, ID = 13.5 A Data Sheet 2 06.99 BUZ 30A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 6 15 - S VDS≥ 2 * ID * RDS(on)max, ID = 13.5 A Input capacitance Ciss 1400 1900 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 280 400 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 130 200 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time 30 45 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time 70 110 td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time 250 320 tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω 90 120 Data Sheet 3 06.99 BUZ 30A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 21 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 84 V 1.2 1.6 ns 180 µC 1.2 - TC = 25 ˚C Inverse diode forward voltage VSD VGS = 0 V, IF = 42 A Reverse recovery time trr VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Data Sheet 4 06.99 BUZ 30A Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 22 A 130 W 110 Ptot 100 90 80 70 60 50 40 30 ID 18 16 14 12 10 8 6 4 20 10 0 0 20 40 60 80 100 120 ˚C 160 2 0 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A 10 0 ID 10 2 tp = 18.0µs ZthJC 1 0 -1 /ID ) on = V DS 100 µs 10 1 RD S( 1 ms 1 0 -2 D = 0.50 0.20 10 -3 10 ms 0.10 0.05 10 0 DC 1 0 -4 single pulse 0.02 0.01 10 -1 0 10 10 1 10 2 V 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 06.99 BUZ 30A Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 50 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.40 a b c d e Ptot = 125W l kj i h g f VGS [V] a 4.0 b 4.5 Ω RDS (on)0.32 0.28 0.24 0.20 0.16 0.12 l f g h i jk ID 40 35 30 25 20 c e c 5.0 d 5.5 e 6.0 f 6.5 d g 7.0 h 7.5 i j 8.0 9.0 15 10 5 0 0 a b k 10.0 l 20.0 0.08 0.04 0.00 0 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 2 4 6 8 V 11 4 8 12 16 20 24 28 32 A 40 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 45 A ID VDS≥2 x ID x RDS(on)max 20 S gfs 35 30 16 14 12 25 10 20 8 15 6 10 5 0 0 4 2 0 0 1 2 3 4 5 6 7 8 V VGS 10 5 10 15 20 25 30 A ID 40 Data Sheet 6 06.99 BUZ 30A Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 13.5 A, VGS = 10 V 0.50 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 VGS(th) 3.6 3.2 2.8 2.4 2.0 2% typ 98% Ω RDS (on)0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -20 20 60 100 °C 160 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C A IF 10 0 Ciss 10 1 Coss 10 -1 Crss 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 VSD V 3.0 Data Sheet 7 06.99 BUZ 30A Avalanche energy EAS = ƒ(Tj) parameter: ID = 21 A, VDD = 50 V RGS = 25 Ω, L = 1.53 mH 500 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 32 A 16 V EAS 400 350 300 250 200 150 VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 4 100 50 0 20 2 0 0 40 60 80 100 120 ˚C 160 10 20 30 40 50 60 70 80 nC 100 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 06.99