BUZ30AH

SIPMOS ® Power Transistor BUZ 30A H • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2--21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 30A H 200 V 21 A 0.13 Ω PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 21 A TC = 26 ˚C Pulsed drain current IDpuls 84 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 21 12 mJ ID = 21 A, VDD = 50 V, RGS = 25 Ω L = 1.53 mH, Tj = 25 ˚C Gate source voltage Power dissipation 450 VGS Ptot ± 20 125 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤1 75 E K/W 55 / 150 / 56 Rev. 2.5 Page 1 2010-07-02 BUZ 30A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current - 10 100 nA IGSS 10 100 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.1 0.13 Ω VGS = 10 V, ID = 13.5 A Rev. 2.5 Page 2 2010-07-02 BUZ 30A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 6 15 - S VDS≥ 2 * ID * RDS(on)max, ID = 13.5 A Input capacitance Ciss 1400 1900 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 280 400 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 130 200 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 30 45 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time - 70 110 td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time - 250 320 tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω 90 120 Rev. 2.5 Page 3 2010-07-02 BUZ 30A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 21 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 84 V TC = 25 ˚C Inverse diode forward voltage VSD 1.2 1.6 VGS = 0 V, IF = 42 A Reverse recovery time trr 180 - ns VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr 1.2 - µC VR = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.5 Page 4 2010-07-02 BUZ 30A H Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 22 130 W A 110 Ptot 100 ID 18 16 90 14 80 70 12 60 10 50 8 40 6 30 4 20 10 2 0 0 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A 10 0 ID 10 2 tp = 18.0µs ZthJC 1 0 -1 /ID n (o ) = V DS 100 µs 10 1 RD S 1 ms 1 0 -2 D = 0.50 0.20 10 ms 1 0 -3 0.10 10 0 DC 1 0 -4 single pulse 0.05 0.02 0.01 10 -1 0 10 10 1 10 2 V 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 -1 0 VDS tp Rev. 2.5 Page 5 2010-07-02 BUZ 30A H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 50 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.40 a Ptot = 125W l b c d e A kj i h g f VGS [V] a 4.0 b 4.5 Ω RDS (on)0.32 0.28 0.24 ID 40 35 e c 5.0 d 5.5 30 e 6.0 f 6.5 25 d g 7.0 h 7.5 0.20 20 c i j 8.0 9.0 0.16 f g h i jk l 15 k 10.0 l 20.0 0.12 10 b 0.08 5 a 0.04 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 i h 7.5 8.0 j 9.0 l k 10.0 20.0 0 0 0.00 2 4 6 8 V 11 0 4 8 12 16 20 24 28 32 A 40 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 45 A ID parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 20 S 16 14 35 30 gfs 12 25 10 20 8 15 6 10 4 2 0 0 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 5 10 15 20 25 30 A ID 40 Rev. 2.5 Page 6 2010-07-02 BUZ 30A H Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 13.5 A, VGS = 10 V 0.50 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 Ω RDS (on)0.40 0.35 V 98% 4.0 VGS(th) 3.6 3.2 typ 0.30 2.8 0.25 2.4 2% 2.0 0.20 98% 1.6 0.15 typ 1.2 0.10 0.8 0.05 0.00 -60 0.4 -20 20 60 100 ˚C 160 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C A IF 10 0 Ciss 10 1 Coss 1 0 -1 Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 1 0 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Rev. 2.5 Page 7 2010-07-02 BUZ 30A H Avalanche energy EAS = ƒ(Tj) parameter: ID = 21 A, VDD = 50 V RGS = 25 Ω, L = 1.53 mH 500 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 32 A 16 mJ V EAS 400 350 VGS 12 300 10 0,2 VDS max 0,8 VDS max 250 8 200 6 150 4 100 50 2 0 20 0 40 60 80 100 120 ˚C 160 0 10 20 30 40 50 60 70 80 nC 100 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.5 Page 8 2010-07-02 BUZ 30A H Package Drawing: TO220-3 Rev. 2.5 Page 9 2010-07-02 BUZ 30A H Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. (www.infineon.com). Rev. 2.5 Page 10 2010-07-02