BUZ30AH3045A

BUZ30AH3045A

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BUZ30AH3045A - SIPMOS Power Transistor - Infineon Technologies AG

  • 详情介绍
  • 数据手册
  • 价格&库存
BUZ30AH3045A 数据手册
BUZ30A H3045A . Halogen-free according to IEC61249-2-21 Pb-free H3045A PG-TO263-3 Yes Rev. 2.2 2010-07-02 BUZ30A H3045A Rev. 2.2 2010-07-02 BUZ30A H3045A Rev 2.2 2010-07-02 BUZ30A H3045A Rev 2.2 2010-07-02 BUZ30A H3045A Rev 2.2 2010-07-02 BUZ30A H3045A Rev 2.2 2010-07-02 BUZ30A H3045A 10 10 1 0.1 0.01 Rev 2.2 2010-07-02 BUZ30A H3045A Rev 2.2 2010-07-02 BUZ30A H3045A Package Drawing: PG-TO263-3 Rev. 2.2 9 2010-07-02 BUZ30A H3045A Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. (www.infineon.com). Rev. 2.2 10 2010-07-02
BUZ30AH3045A
1. 物料型号: - 型号为BUZ30AH3045A。

2. 器件简介: - 该器件为英飞凌(Infineon)生产的SIPMOS Power Transistor,是一个N通道、雪崩额定的功率MOSFET,无铅引脚镀层,符合RoHS标准。

3. 引脚分配: - Pin 1: G(栅极) - Pin 3: S(源极)

4. 参数特性: - 最大额定值: - 连续漏极电流:21A - 脉冲漏极电流:84A - 雪崩电流:21A - 雪崩能量(周期性限制):12mJ - 雪崩能量(单脉冲):450mJ - 栅源电压:±20V - 总功耗:125W - 工作温度:-55...+150°C - 存储温度:-55...+150°C - 芯片到外壳的热阻:≤1 K/W - 芯片到环境的热阻:75 K/W - 静态特性: - 漏源击穿电压:25V - 栅源阈值电压:2.1...4V - 零栅源电压漏极电流:0.1...100µA - 栅源漏电流:10...100nA - 漏源导通电阻:0.1...0.13Ω - 动态特性: - 跨导:6...15S - 输入电容:1400...1900pF - 反向传输电容:130...200pF - 上升时间:4...110ns - 下降时间:90...120ns

5. 功能详解: - 该器件为一个N通道功率MOSFET,具有低导通电阻和高雪崩能量能力,适用于需要高能效和高可靠性的应用场合。

6. 应用信息: - 适用于需要高能效和高可靠性的应用场合,如电源、电机驱动等。

7. 封装信息: - 封装类型为PG-TO263-3,这是一种塑料封装,适用于高功率应用。
BUZ30AH3045A 价格&库存

很抱歉,暂时无法提供与“BUZ30AH3045A”相匹配的价格&库存,您可以联系我们找货

免费人工找货