BUZ31H

SIPMOS ® Power Transistor BUZ 31 H • N channel • Enhancement mode • Avalanche-rated • Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G Type D Pb-free S VDS ID RDS(on) Package BUZ 31 H 200 V 14.5 A 0.2 Ω PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 14.5 A TC = 30 ˚C Pulsed drain current IDpuls 58 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13.5 9 mJ ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.42 mH, Tj = 25 ˚C Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation 200 VGS ± 20 Class 1 V Ptot 95 W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.32 75 K/W E 55 / 150 / 56 Rev. 2.5 Page 1 2009-11-09 BUZ 31 H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current - 10 100 nA IGSS 10 100 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.16 0.2 Ω VGS = 5 V, ID = 9 A Rev. 2.5 Page 2 2009-11-09 BUZ 31 H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 5 12 - S VDS≥ 2 * ID * RDS(on)max, ID = 7 A Input capacitance Ciss 840 1120 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 180 270 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 95 150 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 12 20 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time - 50 75 td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time - 150 20 0 tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω 60 80 Rev. 2.5 Page 3 2009-11-09 BUZ 31 H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 14.5 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 58 V TC = 25 ˚C Inverse diode forward voltage VSD 1.1 1.6 VGS = 0 V, IF = 29A Reverse recovery time trr 170 - ns VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr 1.1 - µC VR = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.5 Page 4 2009-11-09 BUZ 31 H Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 14 100 W A 12 Ptot 80 ID 11 70 10 9 60 8 50 7 40 6 5 30 4 20 3 2 10 0 0 1 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 tp = 15.0µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 A ID V DS /I D K/W 100 µs ZthJC 10 0 R 10 1 DS (o n) = 1 ms 1 0 -1 D = 0.50 10 ms 0.20 10 0 1 0 -2 0.10 0.05 DC 0.02 0.01 single pulse 10 -1 10 0 10 1 10 2 10 -3 V 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 -1 0 VDS tp Rev. 2.5 Page 5 2009-11-09 BUZ 31 H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 32 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.65 Ptot = 95W l kj i h g Ω fa VGS [V] 4.0 b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b c d e A 0.55 ID 24 RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 j f h i k g 20 e d e f 16 g d h i 12 c j k l 8 b a 0.15 0.10 V [V] = GS 0.05 a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 4 0 0 h i j k 8.0 9.0 10.0 20.0 2 4 6 8 10 V 13 0.00 0 4 8 12 16 20 A 28 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 16 VDS≥2 x ID x RDS(on)max 13 S A ID gfs 11 10 9 12 10 8 7 8 6 6 5 4 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V VGS 2 10 0 0 2 4 6 8 10 12 A ID 16 Rev. 2.5 Page 6 2009-11-09 BUZ 31 H Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 9 A, VGS = 10 V 0.75 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.65 98% RDS (on)0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 VGS(th) 3.6 3.2 2.8 2.4 2.0 typ 2% 98% 1.6 typ 1.2 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 pF C A IF 10 3 Ciss 10 1 Coss 10 2 Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Rev. 2.5 Page 7 2009-11-09 BUZ 31 H Avalanche energy EAS = ƒ(Tj) parameter: ID = 14.5 A, VDD = 50 V RGS = 25 Ω, L = 1.42 mH 220 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 20 A 16 V EAS 180 160 140 120 VGS 12 10 0,2 VDS max 8 0,8 VDS max 100 80 60 40 2 20 0 20 40 60 80 100 120 ˚C 160 0 0 10 20 30 40 50 60 70 90 6 4 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.5 Page 8 2009-11-09 BUZ 31 H Package Drawing: PG-TO220-3 Rev. 2.5 Page 9 2009-11-09 BUZ 31 H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. (www.infineon.com). Rev. 2.5 Page 10 2009-11-09