BUZ31L

SIPMOS ® Power Transistor BUZ 31L • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS ID RDS(on) Package BUZ 31 L 200 V 13.5 A 0.2 Ω TO-220 AB C67078-S1322-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 13.5 A TC = 28 ˚C Pulsed drain current IDpuls 54 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13.5 9 mJ ID = 13.5 A, VDD = 50 V, RGS = 25 Ω L = 1.65 mH, Tj = 25 ˚C Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation 200 VGS Ptot ± 20 Class 1 V W 95 TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.32 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 31L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 1.2 1.6 2 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS RDS(on) 0.16 0.2 VGS = 20 V, VDS = 0 V Drain-Source on-resistance Ω VGS = 5 V, ID = 7 A Data Sheet 2 05.99 BUZ 31L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 5 12 - S VDS≥ 2 * ID * RDS(on)max, ID = 7 A Input capacitance Ciss 1200 1600 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 200 300 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 100 150 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time 25 40 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time 80 120 td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time 210 270 tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω 65 85 Data Sheet 3 05.99 BUZ 31L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 13.5 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 54 V 1.2 1.6 ns 180 µC 1.2 - TC = 25 ˚C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 27 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Data Sheet 4 05.99 BUZ 31L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 14 A 12 100 W Ptot 80 70 60 ID 11 10 9 8 50 40 30 20 10 0 0 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 ˚C 160 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 tp = 15.0µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID DS /I D 100 µs ZthJC V 10 0 R 10 1 DS (o n) = 1 ms 1 0 -1 D = 0.50 10 ms 0.20 0.10 1 0 -2 0.05 0.02 0.01 single pulse 10 0 DC 10 -1 10 0 10 1 10 2 10 V -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 31L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 30 A 26 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 0.65 Ptot = 95W lkj i h g f e VGS [V] a 3.0 Ω 0.55 a b c d ID 24 22 20 18 16 14 12 10 8 6 4 2 0 0 a c db c d e f g h i RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 VGS [V] = a 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k l 9.0 10.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 9.0 10.0 bj k l e i k g f h j l 2 4 6 8 V 11 0.00 0 4 8 12 16 20 A 26 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 22 A ID VDS≥2 x ID x RDS(on)max 18 S gfs 18 16 14 12 14 12 10 8 6 4 4 2 0 0 1 2 3 4 5 6 7 8 V VGS 10 8 6 2 0 0 10 2 4 6 8 10 12 14 16 ID A 20 Data Sheet 6 05.99 BUZ 31L Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 7 A, VGS = 5 V 0.65 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.55 RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -20 20 60 100 ˚C 160 VGS(th) 3.6 3.2 2.8 2.4 98% 98% typ 2.0 typ 1.6 2% 1.2 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C A IF 10 0 Ciss 10 1 Coss 1 0 -1 Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 31L Avalanche energy EAS = ƒ(Tj) parameter: ID = 13.5 A, VDD = 50 V RGS = 25 Ω, L = 1.65 mH 220 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 21 A 16 V EAS 180 160 140 120 VGS 12 10 8 100 80 60 40 2 20 0 20 40 60 80 100 120 ˚C 160 0 0 20 6 0,2 VDS max 0,8 VDS max 4 40 60 80 100 120 nC 150 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99