BUZ31LH

SIPMOS ® Power Transistor BUZ 31L H • N channel • Enhancement mode • Avalanche-rated • Logic Level . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G Type D Pb-free S VDS ID RDS(on) Package BUZ 31 L H 200 V 13.5 A 0.2 Ω PG-TO220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 13.5 A TC = 28 ˚C Pulsed drain current IDpuls 54 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13.5 9 mJ ID = 13.5 A, VDD = 50 V, RGS = 25 Ω L = 1.65 mH, Tj = 25 ˚C Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation 200 VGS ± 20 Class 1 V Ptot 95 W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.32 75 K/W E 55 / 150 / 56 Rev. 2.4 Page 1 2009-11-10 BUZ 31L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 1.2 1.6 2 µA VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current - 10 100 nA IGSS 10 100 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.16 0.2 Ω VGS = 5 V, ID = 7 A Rev. 2.4 Page 2 2009-11-10 BUZ 31L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 5 12 - S VDS≥ 2 * ID * RDS(on)max, ID = 7 A Input capacitance Ciss 1200 1600 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 200 300 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 100 150 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 25 40 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time - 80 120 td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time - 210 270 tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω 65 85 Rev. 2.4 Page 3 2009-11-10 BUZ 31L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 13.5 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 54 V TC = 25 ˚C Inverse diode forward voltage VSD 1.2 1.6 VGS = 0 V, IF = 27 A Reverse recovery time trr 180 - ns VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr 1.2 - µC VR = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.4 Page 4 2009-11-10 BUZ 31L H Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 14 100 W A 12 Ptot 80 ID 11 70 10 9 60 8 50 7 40 6 5 30 4 20 3 2 10 0 0 1 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 tp = 15.0µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 A ID R 10 1 DS V DS /I D K/W 100 µs ZthJC 10 0 (o n) = 1 ms 1 0 -1 D = 0.50 10 ms 0.20 10 0 1 0 -2 0.10 0.05 DC 0.02 0.01 single pulse 10 -1 10 0 10 1 10 2 10 -3 V 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Rev. 2.4 Page 5 2009-11-10 BUZ 31L H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 30 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 0.65 Ptot = 95W A lkj i h g f e VGS [V] a 3.0 Ω 0.55 a b c d 26 ID 24 22 db c d e 3.5 4.0 4.5 5.0 5.5 6.0 6.5 RDS (on) 0.50 0.45 20 18 0.40 16 c f g 0.35 14 h 0.30 12 i 7.0 8.0 9.0 10.0 10 bj k 0.25 0.20 e g i k 8 l 6 0.15 f h j l 4 a 0.10 VGS [V] = a 3.0 b 3.5 2 0 0 0.05 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 0.00 k l 9.0 10.0 2 4 6 8 V 11 0 4 8 12 16 20 A 26 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 22 A ID parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 18 S gfs 18 14 12 16 14 12 10 8 6 4 10 8 6 4 2 2 0 0 0 1 2 3 4 5 6 7 8 V VGS 10 0 2 4 6 8 10 12 14 16 ID A 20 Rev. 2.4 Page 6 2009-11-10 BUZ 31L H Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 7 A, VGS = 5 V 0.65 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 Ω 0.55 V 4.0 RDS (on) 0.50 0.45 VGS(th) 3.6 3.2 0.40 2.8 0.35 2.4 0.30 98% 98% 2.0 0.25 typ typ 1.6 0.20 2% 1.2 0.15 0.10 0.8 0.05 0.4 0.00 -60 -20 20 60 100 ˚C 160 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C A IF 10 0 Ciss 10 1 Coss 1 0 -1 Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Rev. 2.4 Page 7 2009-11-10 BUZ 31L H Avalanche energy EAS = ƒ(Tj) parameter: ID = 13.5 A, VDD = 50 V RGS = 25 Ω, L = 1.65 mH 220 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 21 A 16 mJ V EAS 180 VGS 160 12 140 10 120 8 100 0,2 VDS max 0,8 VDS max 80 6 60 4 40 2 20 0 20 40 60 80 100 120 ˚C 160 0 0 20 40 60 80 100 120 nC 150 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.4 Page 8 2009-11-10 BUZ 31L H Package Drawing: TO220-3 Rev. 2.4 Page 9 2009-11-10 BUZ 31L H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. (www.infineon.com). Rev 2.4 Page 10 2009-11-10