BUZ32

SIPMOS ® Power Transistor BUZ 32 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 32 200 V 9.5 A 0.4 Ω TO-220 AB C67078-S1310-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 9.5 A TC = 29 ˚C Pulsed drain current IDpuls 38 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 9.5 6.5 mJ ID = 9.5 A, VDD = 50 V, RGS = 25 Ω L = 2 mH, Tj = 25 ˚C Gate source voltage Power dissipation 120 VGS Ptot ± 20 75 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.67 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 32 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.3 0.4 Ω VGS = 10 V, ID = 6 A Data Sheet 2 05.99 BUZ 32 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 3 4.6 - S VDS≥ 2 * ID * RDS(on)max, ID = 6 A Input capacitance Ciss 400 530 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 85 130 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 45 70 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time 10 15 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time 40 60 td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time 55 75 tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω 30 40 Data Sheet 3 05.99 BUZ 32 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 9.5 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 38 V 1.4 1.7 ns 200 µC 0.6 - TC = 25 ˚C Inverse diode forward voltage VSD VGS = 0 V, IF = 19 A Reverse recovery time trr VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Data Sheet 4 05.99 BUZ 32 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 10 A 80 W Ptot ID 60 8 7 50 6 5 4 40 30 3 20 2 10 0 0 1 0 0 20 40 60 80 100 120 ˚C 160 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 tp = 7.6µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A 10 µs DS /I ID = 10 1 ZthJC 100 µs 10 0 R DS (o n) V D 1 ms 1 0 -1 D = 0.50 0.20 10 0 10 ms 0.10 1 0 -2 0.05 0.02 DC single pulse 0.01 10 -1 0 10 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 32 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 22 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.3 Ptot = 75W l kj i VGS [V] a 4.0 Ω 1.1 a b c d e f g h ID 18 16 g h RDS (on) b 4.5 c 5.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 V [V] = GS 0.1 0.0 a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 14 f d 5.5 e 6.0 f 6.5 12 10 8 d e g 7.0 h 7.5 i j 8.0 9.0 k 10.0 l 20.0 i j k 6 c 4 b 2 a 0 0 2 4 6 8 10 12 V 16 0 4 8 12 16 A 22 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 13 A 11 ID VDS≥2 x ID x RDS(on)max 6.0 S 5.0 gfs 10 9 8 4.5 4.0 3.5 7 3.0 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V VGS 2.5 2.0 1.5 1.0 0.5 0.0 10 0 2 4 6 8 A ID 12 Data Sheet 6 05.99 BUZ 32 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 6 A, VGS = 10 V 1.3 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 1.1 98% RDS (on) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -20 20 60 100 ˚C 160 VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% typ 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C A IF 10 0 10 1 Ciss 1 0 -1 Coss Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 32 Avalanche energy EAS = ƒ(Tj) parameter: ID = 9.5 A, VDD = 50 V RGS = 25 Ω, L = 2 mH 130 mJ 110 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 16 V EAS 100 90 80 70 VGS 12 10 0,2 VDS max 8 0,8 VDS max 60 50 40 30 20 10 0 20 40 60 80 100 120 ˚C 160 0 0 4 8 12 16 20 24 28 32 nC 38 4 6 2 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99