BUZ325

BUZ 325 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 325 400 V 12.5 A 0.35 Ω TO-218 AA C67078-S3118-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 7.5 mH, Tj = 25 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 ID 12.5 IDpuls 50 IAR EAR EAS 12.5 13 A mJ 670 VGS Ptot 125 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 °C ± 20 V W ≤1 75 E 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 325 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 8 A V(BR)DSS 400 VGS(th) 2.1 IDSS IGSS RDS(on) 0.28 0.35 10 100 0.1 10 1 100 3 4 - V µA nA Ω Semiconductor Group 2 07/96 BUZ 325 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 8 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω gfs 8 Ciss Coss Crss td(on) 110 170 260 400 1900 2500 9.8 - S pF ns tr 30 45 td(off) 90 135 tf 350 465 - 100 135 Semiconductor Group 3 07/96 BUZ 325 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 25 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs IS ISM VSD trr Qrr 6.8 450 1 1.5 50 12.5 A V ns µC Semiconductor Group 4 07/96 BUZ 325 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 13 A 11 ID 10 9 8 7 6 5 4 3 2 1 130 W 110 Ptot 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 160 0 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 tp = 3.1µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 A /I 10 µs K/W ZthJC ID 10 1 DS D 100 µs 10 0 (o n) = V DS R 1 ms 10 -1 10 ms D = 0.50 0.20 10 0 0.10 10 -2 DC single pulse 0.05 0.02 0.01 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 325 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 28 A 24 ID 22 20 18 16 14 12 10 8 6 c d e Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.1 Ptot = 125W l kj ih g V [V] f GS a b c d e f g h i j k l 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Ω RDS (on) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 a b c d e f g h j i k VGS [V] = 4 2 0 0 a b 0.1 0.0 V 22 0 4 8 12 16 a 4.0 4.5 b 5.0 c 5.5 d 6.0 f e 6.5 7.0 g 7.5 j h i k 8.0 9.0 10.0 20.0 4 8 12 16 20 A 26 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 22 A 18 16 14 12 10 8 parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 15 S 13 \SYMBOL.ID\ gfs 12 11 10 9 8 7 6 5 6 4 2 0 0 1 2 3 4 5 6 7 8 V VGS 4 3 2 1 0 0 10 2 4 6 8 10 12 14 16 ID A 20 Semiconductor Group 6 07/96 BUZ 325 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 8 A, VGS = 10 V 1.4 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 VGS(th) 3.6 3.2 2.8 2.4 2.0 2% typ 98% Ω 1.2 RDS (on) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C Ciss A IF 10 1 10 0 Coss 10 -1 Crss 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 325 Avalanche energy EAS = ƒ(Tj) parameter: ID = 12.5 A, VDD = 50 V RGS = 25 Ω, L = 7.5 mH 700 mJ 600 EAS 550 500 450 400 350 300 250 200 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 21 A 16 V VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 4 150 100 50 0 20 2 0 0 40 60 80 100 120 °C 160 20 40 60 80 100 120 nC 150 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 325 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96