SIPMOS ® Power Transistor
BUZ 32 H
• N channel • Enhancement mode • Avalanche-rated
. Halogen-free according to IEC61249-2-21
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Pb-free
BUZ 32 H
200 V
9.5 A
0.4 Ω
PG-TO-220-3
Yes
Maximum Ratings Parameter
Symbol
Values
Unit
Continuous drain current
ID
9.5
A
TC = 29 ˚C
Pulsed drain current
IDpuls
38
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
IAR
EAR
EAS
9.5
6.5
mJ
ID = 9.5 A, VDD = 50 V, RGS = 25 Ω L = 2 mH, Tj = 25 ˚C
Gate source voltage
Power dissipation
120
VGS
Ptot
± 20
75
V
W
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Tj
Tstg
RthJC
RthJA
-55 ... + 150
-55 ... + 150
˚C
≤ 1.67
75
E
K/W
55 / 150 / 56
Rev. 2.4
Page 1
2009-11-10
BUZ 32 H
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
200
-
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
Gate threshold voltage
VGS(th)
2.1
3
4
µA
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
0.1
1
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
Gate-source leakage current
-
10
100
nA
IGSS
10
100
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
0.3
0.4
Ω
VGS = 10 V, ID = 6 A
Rev. 2.4
Page 2
2009-11-10
BUZ 32 H
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter
Symbol
min.
Dynamic Characteristics
Values
typ. max.
Unit
Transconductance
gfs
3
4.6 -
S
VDS≥ 2 * ID * RDS(on)max, ID = 6 A
Input capacitance
Ciss
400 530
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
Coss
85 130
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
45 70
ns
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Rise time
-
10
15
tr
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Turn-off delay time
-
40
60
td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Fall time
-
55
75
tf
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
30 40
Rev. 2.4
Page 3
2009-11-10
BUZ 32 H
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter
Symbol
min.
Reverse Diode
Values
typ. max.
Unit
Inverse diode continuous forward current
IS
9.5
A
TC = 25 ˚C
Inverse diode direct current,pulsed
ISM
38
V
TC = 25 ˚C
Inverse diode forward voltage
VSD
1.4
1.7
VGS = 0 V, IF = 19 A
Reverse recovery time
trr
200
-
ns
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
Qrr
0.6
-
µC
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Rev. 2.4
Page 4
2009-11-10
BUZ 32 H
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
10
80
A
W
Ptot
ID
60
8
7
50
6
40
5
4
30
3
20
2
10
0 0
1
0
20
40
60
80
100
120
˚C
160
0
20
40
60
80
100
120
˚C
160
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C
10 2
tp = 7.6µs
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
K/W
A
/I
D
10 µs
ID
=
ZthJC
100 µs
10 0
10 1
R
DS
(o
n)
V
DS
1 ms
1 0 -1
D = 0.50
0.20
10 0
10 ms
0.10
1 0 -2
0.05
0.02
DC
single pulse
0.01
10 -1 0 10
10
1
10
2
V
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10
-1
0
VDS
tp
Rev. 2.4
Page 5
2009-11-10
BUZ 32 H
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
22
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
1.3
Ptot = 75W
l
A
kj
i V [V] GS
a 4.0
Ω
1.1
a
b
c
d
e
f
g
h
ID
18
h
16
g
b 4.5
c 5.0
RDS (on)
1.0
0.9
14
d 5.5
12
f
e 6.0
f 6.5
0.8
0.7
g 7.0
10
e
h 7.5
i 8.0
9.0
0.6
8
d
0.5
j
k 10.0
l 20.0
0.4
i
j
k
6
c
0.3
4
0.2
b
2
a
VGS [V] =
a 4.0 4.5
b 5.0
c 5.5
d 6.0
0.1
e f 6.5 7.0
0 0
g 7.5
h i j k 8.0 9.0 10.0 20.0
0.0
2
4
6
8
10
12
V
16
0
4
8
12
16
A
22
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
13
A
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
6.0
S
5.0
gfs
11
ID
10
9
8
4.5
4.0
3.5
7
3.0
6
2.5
5
4
2.0
1.5
3
2
1.0
1
0.5
0.0
0
0
1
2
3
4
5
6
7
8
V
VGS
10
0
2
4
6
8
A
ID
12
Rev. 2.4
Page 6
2009-11-10
BUZ 32 H
Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 6 A, VGS = 10 V
1.3
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6
Ω
1.1
V
98%
4.0
RDS (on)
1.0
VGS(th)
3.6
0.9
3.2
typ
0.8
2.8
0.7
2.4
2%
0.6
98%
2.0
0.5
0.4
typ
1.6
1.2
0.3
0.8
0.2
0.1
0.0 -60
0.4
-20
20
60
100
˚C
160
0.0 -60
-20
20
60
100
˚C
160
Tj
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs
10 2
nF
C
A
IF
10 0
10 1
Ciss
1 0 -1
Coss
Crss
10 0
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 -2 0
5
10
15
20
25
30
V
VDS
40
10 -1 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Rev. 2.4
Page 7
2009-11-10
BUZ 32 H
Avalanche energy EAS = ƒ(Tj) parameter: ID = 9.5 A, VDD = 50 V RGS = 25 Ω, L = 2 mH
130
Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A
16
mJ
110
V
EAS
100
VGS
12
90
80
10
0,2 VDS max
70
8
0,8 VDS max
60
50
6
40
30
4
20
2
10
0 20
0
40
60
80
100
120
˚C
160
0
4
8
12
16
20
24
28
32 nC 38
Tj
QGate
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
240
V
230 V(BR)DSS 225
220
215
210
205
200
195
190
185
180 -60
-20
20
60
100
˚C
160
Tj
Rev. 2.4
Page 8
2009-11-10
BUZ 32 H
Package Drawing: TO220-3
Rev. 2.4
Page 9
2009-11-10
BUZ 32 H
Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
(www.infineon.com).
Rev. 2.4
Page 10
2009-11-10