BUZ32H

SIPMOS ® Power Transistor BUZ 32 H • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 32 H 200 V 9.5 A 0.4 Ω PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 9.5 A TC = 29 ˚C Pulsed drain current IDpuls 38 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 9.5 6.5 mJ ID = 9.5 A, VDD = 50 V, RGS = 25 Ω L = 2 mH, Tj = 25 ˚C Gate source voltage Power dissipation 120 VGS Ptot ± 20 75 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.67 75 E K/W 55 / 150 / 56 Rev. 2.4 Page 1 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current - 10 100 nA IGSS 10 100 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.3 0.4 Ω VGS = 10 V, ID = 6 A Rev. 2.4 Page 2 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 3 4.6 - S VDS≥ 2 * ID * RDS(on)max, ID = 6 A Input capacitance Ciss 400 530 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 85 130 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 45 70 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 10 15 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time - 40 60 td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time - 55 75 tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω 30 40 Rev. 2.4 Page 3 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 9.5 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 38 V TC = 25 ˚C Inverse diode forward voltage VSD 1.4 1.7 VGS = 0 V, IF = 19 A Reverse recovery time trr 200 - ns VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr 0.6 - µC VR = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.4 Page 4 2009-11-10 BUZ 32 H Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 10 80 A W Ptot ID 60 8 7 50 6 40 5 4 30 3 20 2 10 0 0 1 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 tp = 7.6µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A /I D 10 µs ID = ZthJC 100 µs 10 0 10 1 R DS (o n) V DS 1 ms 1 0 -1 D = 0.50 0.20 10 0 10 ms 0.10 1 0 -2 0.05 0.02 DC single pulse 0.01 10 -1 0 10 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 -1 0 VDS tp Rev. 2.4 Page 5 2009-11-10 BUZ 32 H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 22 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.3 Ptot = 75W l A kj i V [V] GS a 4.0 Ω 1.1 a b c d e f g h ID 18 h 16 g b 4.5 c 5.0 RDS (on) 1.0 0.9 14 d 5.5 12 f e 6.0 f 6.5 0.8 0.7 g 7.0 10 e h 7.5 i 8.0 9.0 0.6 8 d 0.5 j k 10.0 l 20.0 0.4 i j k 6 c 0.3 4 0.2 b 2 a VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 0.1 e f 6.5 7.0 0 0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 2 4 6 8 10 12 V 16 0 4 8 12 16 A 22 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 13 A parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 6.0 S 5.0 gfs 11 ID 10 9 8 4.5 4.0 3.5 7 3.0 6 2.5 5 4 2.0 1.5 3 2 1.0 1 0.5 0.0 0 0 1 2 3 4 5 6 7 8 V VGS 10 0 2 4 6 8 A ID 12 Rev. 2.4 Page 6 2009-11-10 BUZ 32 H Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 6 A, VGS = 10 V 1.3 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 Ω 1.1 V 98% 4.0 RDS (on) 1.0 VGS(th) 3.6 0.9 3.2 typ 0.8 2.8 0.7 2.4 2% 0.6 98% 2.0 0.5 0.4 typ 1.6 1.2 0.3 0.8 0.2 0.1 0.0 -60 0.4 -20 20 60 100 ˚C 160 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C A IF 10 0 10 1 Ciss 1 0 -1 Coss Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Rev. 2.4 Page 7 2009-11-10 BUZ 32 H Avalanche energy EAS = ƒ(Tj) parameter: ID = 9.5 A, VDD = 50 V RGS = 25 Ω, L = 2 mH 130 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 16 mJ 110 V EAS 100 VGS 12 90 80 10 0,2 VDS max 70 8 0,8 VDS max 60 50 6 40 30 4 20 2 10 0 20 0 40 60 80 100 120 ˚C 160 0 4 8 12 16 20 24 28 32 nC 38 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.4 Page 8 2009-11-10 BUZ 32 H Package Drawing: TO220-3 Rev. 2.4 Page 9 2009-11-10 BUZ 32 H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. (www.infineon.com). Rev. 2.4 Page 10 2009-11-10