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BUZ32H3045A

BUZ32H3045A

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BUZ32H3045A - SIPMOS Power Transistor - Infineon Technologies AG

  • 详情介绍
  • 数据手册
  • 价格&库存
BUZ32H3045A 数据手册
BUZ 32 H3045A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free BUZ32 H3045A PG-TO263-3 Yes Rev. 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ32 H3045A Rev. 2.2 9 2009-11-10 BUZ32 H3045A Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. (www.infineon.com). Rev. 2.2 10 2009-11-10
BUZ32H3045A
### 物料型号 - 型号:BUZ 32 SMD

### 器件简介 - 类型:N channel Enhancement mode SMD MOS Power Transistor - 特点:Avalanche-rated, Halogen-Free

### 引脚分配 - Package:D PAK - Ordering Code:Q67042-S4133

### 参数特性 - 最大额定值: - 连续漏极电流(I_D):9.5A @ Tc=29°C - 脉冲漏极电流(I_D,pulse):38A @ Tc=25°C - 雪崩电流(I_AR):9.5A - 雪崩能量(E_AR):6.5mJ - 栅源电压(V_GS):±20V - 总功耗(P_TOT):75W @ Tc=25°C - 工作温度(T):-55...+150°C - 存储温度(T_stg):-55...+150°C - 热阻(RthJC):≤1.67°C/W(芯片到外壳) - 热阻(RthJA):75°C/W(芯片到环境)

### 功能详解 - 该器件为N通道增强型MOSFET,适用于需要高耐压和大电流的应用场合。它还具备雪崩额定功能,可以在电压瞬间超过最大额定值时保护器件不受损害。

### 应用信息 - 适用于需要高耐压和大电流输出的应用,如电源管理、电机控制和变频器等。

### 封装信息 - 封装类型:D PAK - 尺寸:具体尺寸参数如上表所示,包括长度、宽度等。
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