BUZ341

SIPMOS ® Power Transistor BUZ 341 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 341 200 V 33 A 0.07 Ω TO-218 AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 33 A TC = 28 ˚C Pulsed drain current IDpuls 132 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 33 16 mJ ID = 33 A, VDD = 50 V, RGS = 25 Ω L = 1.09 mH, Tj = 25 ˚C Gate source voltage Power dissipation 790 VGS Ptot ± 20 170 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 0.74 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 341 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.06 0.07 Ω VGS = 10 V, ID = 21 A Data Sheet 2 05.99 BUZ 341 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 15 23 - S VDS≥ 2 * ID * RDS(on)max, ID = 21 A Input capacitance Ciss 2600 3900 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 500 750 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 230 350 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time 40 60 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time 110 170 td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time 450 680 tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω 160 240 Data Sheet 3 05.99 BUZ 341 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 33 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 132 V 1.3 1.6 ns 230 µC 1.8 - TC = 25 ˚C Inverse diode forward voltage VSD VGS = 0 V, IF = 66 A Reverse recovery time trr VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Data Sheet 4 05.99 BUZ 341 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 34 A 180 W Ptot 140 120 ID 28 24 20 100 16 80 12 60 40 20 0 0 8 4 0 0 20 40 60 80 100 120 ˚C 160 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 A ID tp = 350.0ns K/W 10 2 1 µs /ID n) ZthJC 1 0 -1 10 µs 100 µs = VD S RD 10 1 S( o 1 ms 10 ms D = 0.50 0.20 10 -2 0.10 0.05 10 0 DC single pulse 0.02 0.01 10 -1 0 10 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 341 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 75 A 65 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.22 Ptot = 170W l kj ih g VGS [V] a 4.0 b 4.5 c 5.0 Ω f a b c d ID 60 55 50 45 40 35 e 0.18 RDS (on) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 j e f g i h d 5.5 e 6.0 f 6.5 g 7.0 d h 7.5 i j 8.0 9.0 30 25 20 15 10 5 0 0 a b c k 10.0 l 20.0 VGS [V] = 0.02 11 0.00 0 a 5.0 4.5 4.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 2 4 6 8 V 10 20 30 40 50 A 65 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 65 A 55 ID VDS≥2 x ID x RDS(on)max 30 S 26 gfs 50 45 24 22 20 40 35 30 25 20 15 18 16 14 12 10 8 6 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 4 2 0 0 10 10 20 30 40 A ID 60 Data Sheet 6 05.99 BUZ 341 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 21 A, VGS = 10 V 0.26 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.22 98% RDS (on) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 VGS(th) 3.6 3.2 2.8 2.4 2.0 typ 2% 98% typ 1.6 1.2 0.06 0.04 0.02 0.00 -60 -20 20 60 100 ˚C 160 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 3 nF C A Ciss IF 10 2 10 0 Coss Crss 1 0 -1 10 1 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 341 Avalanche energy EAS = ƒ(Tj) parameter: ID = 33 A, VDD = 50 V RGS = 25 Ω, L = 1.09 mH 800 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 50 A 16 mJ V EAS 600 VGS 12 500 10 0,2 VDS max 0,8 VDS max 400 8 300 6 200 4 100 0 20 2 0 0 40 60 80 100 120 ˚C 160 20 40 60 80 100 120 140 nC 180 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99