BUZ349

SIPMOS ® Power Transistor BUZ 349 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V ID 32 A RDS(on) 0.06 Ω Package Ordering Code BUZ 349 TO-218 AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 ˚C ID A 32 Pulsed drain current TC = 25 ˚C IDpuls 128 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 32 A, VDD = 25 V, RGS = 25 Ω L = 322 µH, Tj = 25 ˚C 32 15 mJ 220 VGS Ptot Gate source voltage Power dissipation TC = 25 ˚C ± 20 125 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 349 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 10 V, ID = 21 A Ω 0.05 0.06 Data Sheet 2 05.99 BUZ 349 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 21 A gfs S 10 17 pF 1400 1850 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 450 700 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 230 370 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr 20 30 Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) 80 120 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf 230 300 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 120 160 Data Sheet 3 05.99 BUZ 349 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 ˚C IS A 32 Inverse diode direct current,pulsed TC = 25 ˚C ISM V SD - 128 V Inverse diode forward voltage VGS = 0 V, IF = 64 A trr 1.4 1.7 ns Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 130 µC Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs - 0.7 - Data Sheet 4 05.99 BUZ 349 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 34 A 130 W 110 Ptot 100 90 80 70 60 50 40 30 20 10 0 0 ID 28 24 20 16 12 8 4 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A 10 0 t = 25.0µs p ID 10 2 / ZthJC 10 -1 I D = V DS 100 µs DS (o n) 10 -2 D = 0.50 1 ms R 10 1 0.20 10 10 ms -3 0.10 0.05 10 -4 single pulse 0.02 0.01 10 0 0 10 10 1 DC 2 V 10 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 349 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 75 A 65 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.19 Ptot = 125W l kj i h VGS [V] a b 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Ω 0.16 RDS (on) 0.14 0.12 0.10 0.08 0.06 0.04 b a b c d e f g ID 60 55 g c d 50 45 40 35 30 d e f e f g h i j k h i j k 25 20 15 10 5 0 0 a c l 0.02 0.00 0 VGS [V] = a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 1 2 3 4 5 6 7 V 9 10 20 30 40 50 A 70 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 75 A 65 ID parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 22 S 18 16 14 12 10 8 60 55 50 45 40 35 30 25 20 15 10 5 0 0 gfs 6 4 2 0 1 2 3 4 5 6 7 8 V VGS 10 0 10 20 30 40 50 A ID 70 Data Sheet 6 05.99 BUZ 349 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 21 A, VGS = 10 V 0.19 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.16 RDS (on) 0.14 98% VGS(th) 3.6 3.2 typ 0.12 0.10 0.08 0.06 2.8 2.4 2% 98% typ 2.0 1.6 1.2 0.04 0.02 0.00 -60 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 nF C A IF 10 0 Ciss 10 2 Coss Crss 10 -1 10 1 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 349 Avalanche energy EAS = ƒ(Tj) parameter: ID = 32 A, VDD = 25 V RGS = 25 Ω, L = 322 µH 240 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 51 A 16 V 200 EAS 180 160 VGS 12 0,2 VDS max 0,8 VDS max 10 140 120 100 6 80 60 40 2 20 0 20 0 40 60 80 100 120 ˚C 160 0 10 20 4 8 30 40 50 60 70 80 nC 100 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 V(BR)DSS 14 1 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99