BUZ350

SIPMOS ® Power Transistor BUZ 350 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 22 A RDS(on) 0.12 Ω Package Ordering Code BUZ 350 TO-218 AA C67078-S3117-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 33 ˚C ID A 22 Pulsed drain current TC = 25 ˚C IDpuls 88 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 22 A, VDD = 50 V, RGS = 25 Ω L = 1.39 mH, Tj = 25 ˚C 22 12 mJ 450 VGS Ptot Gate source voltage Power dissipation TC = 25 ˚C ± 20 125 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 350 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 ˚C VDS = 200 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 10 V, ID = 14 A Ω 0.09 0.12 Data Sheet 2 05.99 BUZ 350 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 14 A gfs S 9 15 pF 1400 1900 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 280 400 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 130 200 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr 30 45 Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) 70 110 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf 250 320 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 90 120 Data Sheet 3 05.99 BUZ 350 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 ˚C IS A 22 Inverse diode direct current,pulsed TC = 25 ˚C ISM V SD - 88 V Inverse diode forward voltage VGS = 0 V, IF = 44 A trr 1.2 1.7 ns Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 180 µC Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs - 1.2 - Data Sheet 4 05.99 BUZ 350 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 24 A 20 130 W 110 Ptot 100 90 80 70 60 ID 18 16 14 12 10 50 8 40 30 20 10 0 0 20 40 60 80 100 120 ˚C 160 6 4 2 0 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A 10 0 ID 10 2 t = 17.0µs p ZthJC 10 -1 /ID = 10 1 V DS 100 µs R n) (o DS 1 ms 10 -2 D = 0.50 0.20 10 -3 10 ms 0.10 0.05 10 0 DC 10 -4 single pulse 0.02 0.01 10 -1 0 10 10 1 10 2 V 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 350 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 50 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.38 Ptot = 125W l j k ih g fV GS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Ω 0.32 RDS (on) 0.28 0.24 0.20 0.16 a b c d e f ID 40 35 30 25 20 c e c d e f dg h i j k l g 15 10 5 0 0 a b 0.12 0.08 0.04 0.00 0 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 i k l h j k l 10.0 20.0 2 4 6 8 V 12 5 10 15 20 25 30 35 40 A 50 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 45 A ID parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 20 S 16 14 35 30 gfs 12 25 10 20 8 15 6 10 5 0 0 4 2 0 1 2 3 4 5 6 7 8 V VGS 10 0 5 10 15 20 25 30 A ID 40 Data Sheet 6 05.99 BUZ 350 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 14 A, VGS = 10 V 0.38 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.32 RDS (on) 0.28 98% VGS(th) 3.6 3.2 typ 0.24 0.20 0.16 0.12 0.08 0.04 0.00 -60 2.8 2.4 2% 98% typ 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 2 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C A IF 10 1 Ciss 10 1 Coss 10 0 Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -1 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 350 Avalanche energy EAS = ƒ(Tj) parameter: ID = 22 A, VDD = 50 V RGS = 25 Ω, L = 1.39 mH 500 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 33 A 16 V EAS 400 350 300 250 200 150 VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 4 100 50 0 20 2 0 40 60 80 100 120 ˚C 160 0 10 20 30 40 50 60 70 80 nC 100 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99