BUZ60

BUZ 60 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 5.5 A RDS(on) 1Ω Package Ordering Code BUZ 60 TO-220 AB C67078-S1312-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 36 °C ID A 5.5 Pulsed drain current TC = 25 °C IDpuls 22 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V, RGS = 25 Ω L = 18.5 mH, Tj = 25 °C 5.5 8 mJ 320 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 75 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 °C ≤ 1.67 75 E 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 60 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 400 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 400 V, V GS = 0 V, Tj = 25 °C V DS = 400 V, V GS = 0 V, Tj = 125 °C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 3.5 A Ω 0.65 1 Semiconductor Group 2 07/96 BUZ 60 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 3.5 A gfs S 2.5 4.3 pF 780 1050 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 120 180 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 50 80 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Ω tr 20 30 Rise time V DD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Ω td(off) 50 75 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Ω tf 130 150 Fall time V DD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Ω - 70 90 Semiconductor Group 3 07/96 BUZ 60 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 5.5 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 22 V Inverse diode forward voltage V GS = 0 V, IF = 11 A trr 1 1.2 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 350 µC Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/µs - 3 - Semiconductor Group 4 07/96 BUZ 60 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 6.0 A 80 W Ptot ID 60 5.0 4.5 4.0 50 3.5 3.0 2.5 40 30 2.0 1.5 1.0 20 10 0 0 0.5 0.0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID 10 1 /I D t = 21.0µs p ZthJC 10 0 100 µs =V DS 1 ms 10 -1 D = 0.50 0.20 0.10 10 0 10 ms R DS (o n) 10 -2 0.05 0.02 0.01 DC 10 -1 single pulse V 10 3 10 0 10 1 10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 60 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 13 A 11 ID 10 9 8 7 6 5 c e Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 3.2 a b c d Ptot = 75W l kj i h g f VGS [V] a b c d e 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Ω RDS (on) 2.4 2.0 df g h i j k l 1.6 1.2 e f gh ij 4 3 b 0.8 k 2 1 0 0 4 8 12 16 a 0.4 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 V 22 0 2 4 6 8 A 12 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 10 A 8 7 6 5 4 3 parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 8.0 S gfs ID 6.0 5.0 4.0 3.0 2.0 2 1 0 0 1.0 0.0 1 2 3 4 5 6 7 8 V VGS 10 0 1 2 3 4 5 6 A ID 8 Semiconductor Group 6 07/96 BUZ 60 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.5 A, VGS = 10 V 4.5 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 VGS(th) 3.6 3.2 2.8 typ 98% Ω RDS (on) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 98% typ 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 2% -20 20 60 100 °C 160 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C A IF 10 0 Ciss 10 1 10 -1 Coss 10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 60 Avalanche energy EAS = ƒ(Tj) parameter: ID = 5.5 A, VDD = 50 V RGS = 25 Ω, L = 18.5 mH 340 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 8 A 16 V EAS 280 240 10 200 8 0,2 VDS max 0,8 VDS max VGS 12 160 120 6 80 40 0 20 4 2 0 40 60 80 100 120 °C 160 0 10 20 30 40 50 nC 65 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 60 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96