BUZ61A

BUZ 61 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 11 A RDS(on) 0.5 Ω Package Ordering Code BUZ 61 A TO-220 AB C67078-S1341-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C ID A 11 Pulsed drain current TC = 25 °C IDpuls 44 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 mH, Tj = 25 °C 12.5 13 mJ 570 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 150 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 °C ≤ 0.83 75 E 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 61 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 400 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 400 V, V GS = 0 V, Tj = 25 °C V DS = 400 V, V GS = 0 V, Tj = 125 °C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 8 A Ω 0.4 0.5 Semiconductor Group 2 07/96 BUZ 61 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 8 A gfs S 5 11.5 pF 1500 2250 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 210 315 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 75 110 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr 20 30 Rise time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) 65 100 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf 260 340 Fall time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 75 100 Semiconductor Group 3 07/96 BUZ 61 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 11 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 44 V Inverse diode forward voltage V GS = 0 V, IF = 25 A trr 1.1 1.4 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 280 µC Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/µs - 3 - Semiconductor Group 4 07/96 BUZ 61 A Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 12 A 160 W Ptot ID 120 10 9 8 100 7 6 5 80 60 4 3 2 40 20 0 0 1 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 t = 5.5µs p 10 µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 A ID 10 1 DS (o n) K/W ZthJC 10 -1 100 µs DS /I D =V 1 ms R 10 ms D = 0.50 0.20 10 0 10 -2 0.10 0.05 single pulse 0.02 0.01 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 61 A Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 26 A 22 ID 20 18 16 14 12 10 8 6 4 2 0 0 4 8 12 16 20 a c Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.6 Ptot = 150W l kj i hg f a e VGS [V] a 4.0 b 4.5 b c Ω RDS (on) 1.2 d c 5.0 d 5.5 e 6.0 f 6.5 1.0 g 7.0 h 7.5 i j 8.0 9.0 0.8 d 0.6 k 10.0 b l 20.0 0.4 0.2 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 e f hg ji k h j k i 8.0 9.0 10.0 20.0 0.0 V 28 0 2 4 6 8 10 12 14 16 A 20 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 16 parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 14 S A ID gfs 12 11 10 12 10 9 8 8 7 6 6 5 4 4 3 2 0 0 2 1 0 1 2 3 4 5 6 7 8 V VGS 10 0 2 4 6 8 10 12 ID A 15 Semiconductor Group 6 07/96 BUZ 61 A Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 8 A, VGS = 10 V 2.2 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 98% Ω RDS (on) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 -20 20 60 100 °C 160 98% typ VGS(th) 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 2% typ Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C A IF 10 0 Ciss 10 1 Coss 10 -1 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 61 A Avalanche energy EAS = ƒ(Tj) parameter: ID = 12.5 A, VDD = 50 V RGS = 25 Ω, L = 6.38 mH 600 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 15 A 16 V 500 EAS 450 400 10 350 0,2 VDS max 300 250 6 200 150 100 2 50 0 20 0 40 60 80 100 120 °C 160 0 20 40 60 80 nC 110 4 8 0,8 VDS max VGS 12 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 61 A Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96