BUZ72A

SIPMOS ® Power Transistor BUZ 72A • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V ID 9A RDS(on) 0.25 Ω Package Ordering Code BUZ 72 A TO-220 AB C67078-S1313-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 ˚C ID A 9 Pulsed drain current TC = 25 ˚C IDpuls 36 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RGS = 25 Ω L = 885 µH, Tj = 25 ˚C 10 7.9 mJ 59 VGS Ptot Gate source voltage Power dissipation TC = 25 ˚C ± 20 40 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 3.1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 72A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 10 V, ID = 6 A Ω 0.2 0.25 Data Sheet 2 05.99 BUZ 72A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 6 A gfs S 3 4.3 pF 400 530 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 120 180 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 70 105 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr 10 15 Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) 45 70 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf 55 75 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 40 55 Data Sheet 3 05.99 BUZ 72A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 ˚C IS A 9 Inverse diode direct current,pulsed TC = 25 ˚C ISM V SD - 36 V Inverse diode forward voltage VGS = 0 V, IF = 20 A trr 1.4 1.6 ns Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 170 µC Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs - 0.3 - Data Sheet 4 05.99 BUZ 72A Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 10 A 45 W Ptot 35 30 ID 8 7 6 25 5 20 4 15 10 5 0 0 3 2 1 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 t = 52.0µs p K/W A DS I D ID 10 1 DS (o n) 100 µs / R = V ZthJC 10 0 1 ms 10 -1 D = 0.50 10 ms 0.20 0.10 10 -2 0.05 0.02 10 0 DC single pulse 0.01 10 -1 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 72A Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 20 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.80 Ptot = 40W l kj i VGS [V] 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b c d e f g h Ω RDS (on) 0.60 ID 16 14 12 10 e ha c d e g 0.50 ff g h i 0.40 8 d j k 0.30 i j 6 c l 0.20 0.10 VGS [V] = a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 k 4 b 2 a h i j k 8.0 9.0 10.0 20.0 0 0 2 4 6 8 V 11 0.00 0 2 4 6 8 10 12 14 16 A 20 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 24 A 20 ID parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 6.0 S 5.0 gfs 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 V VGS 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 0 4 8 12 16 A ID 22 Data Sheet 6 05.99 BUZ 72A Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 6 A, VGS = 10 V 0.80 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V Ω RDS (on) 0.60 VGS(th) 98% 4.0 3.6 3.2 typ 0.50 2.8 2.4 0.40 2% 98% 0.30 2.0 1.6 1.2 0.8 typ 0.20 0.10 0.00 -60 0.4 0.0 -60 -20 20 60 100 ˚C 160 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C A IF 10 0 10 1 Ciss 10 -1 Coss Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 72A Avalanche energy EAS = ƒ(Tj) parameter: ID = 10 A, VDD = 25 V RGS = 25 Ω, L = 885 µH 60 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 15 A 16 V 50 EAS 45 40 VGS 12 0,2 VDS max 0,8 VDS max 10 35 30 25 6 20 15 10 2 5 0 20 0 40 60 80 100 120 ˚C 160 0 10 20 30 40 50 nC 70 4 8 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 V(BR)DSS 14 1 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99