BUZ73LH

SIPMOS ® Power Transistor BUZ 73L H • N channel • Enhancement mode • Avalanche-rated • Logic Level . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G Type D Pb-free S VDS 200 V ID 7A RDS(on) 0.4 Ω Package BUZ 73 L H PG-TO220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 ˚C ID A 7 IDpuls Pulsed drain current TC = 25 ˚C 28 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 ˚C 7 6.5 mJ 120 VGS Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 ˚C ± 20 Class 1 V Ptot W 40 Tj Tstg RthJC RthJA Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 -55 ... + 150 -55 ... + 150 ˚C ≤ 3.1 75 K/W E 55 / 150 / 56 Rev. 2.4 Page 1 2009-11-10 BUZ 73L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 V GS(th) - - Gate threshold voltage V GS=VDS, ID = 1 mA 1.2 IDSS 1.6 2 µA Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 ˚C VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 0.1 1 IGSS 10 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 5 V, ID = 3.5 A Ω 0.3 0.4 Rev. 2.4 Page 2 2009-11-10 BUZ 73L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 3.5 A gfs S 5 Ciss 6.5 pF Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss 630 840 Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Crss 120 200 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 60 90 ns Turn-on delay time V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω tr 15 20 Rise time V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω td(off) 60 90 Turn-off delay time V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω tf 100 130 Fall time V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω - 40 50 Rev. 2.4 Page 3 2009-11-10 BUZ 73L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 ˚C IS A ISM - 7 Inverse diode direct current,pulsed TC = 25 ˚C V SD - 28 V Inverse diode forward voltage VGS = 0 V, IF = 14 A trr 1.1 1.7 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 140 µC Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/µs - 0.7 - Rev. 2.4 Page 4 2009-11-10 BUZ 73L H Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 7.5 45 W A 6.5 Ptot 35 ID 6.0 5.5 30 5.0 4.5 25 4.0 20 3.5 3.0 15 2.5 2.0 10 1.5 5 1.0 0.5 0.0 0 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A /I D t = 15.0µs p ID 10 1 =V ZthJC 100 µs 10 0 R DS (o n) DS 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 0.05 0.02 single pulse 0.01 DC 10 -1 0 10 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Rev. 2.4 Page 5 2009-11-10 BUZ 73L H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 16 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.3 Ptot = 40W li h kj g f e VGS [V] a 2.0 Ω 1.1 a b c A ID 12 d b c 2.5 3.0 3.5 4.0 RDS (on) 1.0 0.9 10 d e 0.8 f 4.5 5.0 5.5 6.0 7.0 8.0 10.0 0.7 8 c g h 0.6 6 i j k 0.5 0.4 4 b l 0.3 d e hjf k ig 2 0.2 VGS [V] = a 2.0 2.5 b 3.0 0.1 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 7.0 j 8.0 0 0 a k 10.0 0.0 2 4 6 8 V 12 0 2 4 6 8 10 A 13 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 18 A ID parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 12 S 10 14 12 gfs 9 8 10 7 6 8 5 6 4 4 3 2 2 1 0 0 0 1 2 3 4 5 6 7 8 V VGS 10 0 2 4 6 8 10 12 ID A 15 Rev. 2.4 Page 6 2009-11-10 BUZ 73L H Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.5 A, VGS = 5 V 1.3 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 Ω 1.1 V 4.0 RDS (on) 1.0 VGS(th) 3.6 3.2 0.9 0.8 2.8 0.7 2.4 0.6 98% 98% 2.0 0.5 typ 0.4 typ 1.6 2% 1.2 0.3 0.2 0.8 0.1 0.4 0.0 -60 -20 20 60 100 ˚C 160 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 pF C A IF 10 3 Ciss 10 1 10 2 Coss Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Rev. 2.4 Page 7 2009-11-10 BUZ 73L H Avalanche energy EAS = ƒ(Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω, L = 3.67 mH 130 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 63 A 16 mJ 110 V EAS 100 VGS 12 0,2 VDS max 90 80 10 0,8 VDS max 70 8 60 50 6 40 30 4 20 2 10 0 20 0 40 60 80 100 120 ˚C 160 0 10 20 30 40 50 60 70 80 nC 100 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.2 Page 8 2007-01-16 Rev. 2.4 Page 8 2009-11-10 BUZ 73L H Package Drawing: TO220-3 Rev. 2.4 Page 9 2009-11-10 BUZ 73L H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. (www.infineon.com). Rev. 2.4 Page 10 2009-11-10