BUZ76

BUZ 76 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 3A RDS(on) 1.8 Ω Package Ordering Code BUZ 76 TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 37 °C ID A 3 Pulsed drain current TC = 25 °C IDpuls 12 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 35 mH, Tj = 25 °C 3 5 mJ 180 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 40 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 °C ≤ 3.1 75 E 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 76 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 400 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 400 V, V GS = 0 V, Tj = 25 °C V DS = 400 V, V GS = 0 V, Tj = 125 °C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 2 A Ω 1.4 1.8 Semiconductor Group 2 07/96 BUZ 76 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 2 A gfs S 2.1 3 pF 430 650 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 65 100 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 25 40 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω tr 8 12 Rise time V DD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω td(off) 30 45 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω tf 55 75 Fall time V DD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω - 30 40 Semiconductor Group 3 07/96 BUZ 76 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 3 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 12 V Inverse diode forward voltage V GS = 0 V, IF = 6 A trr 1 1.4 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 300 µC Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/µs - 2.5 - Semiconductor Group 4 07/96 BUZ 76 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 3.2 45 W Ptot 35 30 ID A 2.4 2.0 25 1.6 20 1.2 15 0.8 10 5 0 0 0.4 0.0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID t = 21.0µs p ZthJC 10 1 100 µs 10 0 /I D 10 -1 D = 0.50 1 ms =V DS R 10 0 DS (o n) 0.20 0.10 10 -2 0.05 0.02 10 ms single pulse 0.01 10 -1 0 10 10 1 10 2 DC V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 76 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 7.0 A 6.0 ID 5.5 5.0 4.5 4.0 3.5 3.0 2.5 b c Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 5.5 a b c Ptot = 40W l k ih f jg e da b c d e f g h i j VGS [V] 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 Ω RDS (on) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 a VGS [V] = d e f g h ji k 2.0 1.5 1.0 0.5 0.0 0 4 8 12 16 20 24 k 10.0 l 20.0 0.5 V 30 0.0 0.0 a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 j k h i 8.0 9.0 10.0 20.0 1.0 2.0 3.0 4.0 5.0 A 6.5 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 6.0 A 5.0 ID parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 4.5 S gfs 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V VGS 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 10 1.0 2.0 3.0 4.0 A ID 5.5 Semiconductor Group 6 07/96 BUZ 76 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 2 A, VGS = 10 V 7.0 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 VGS(th) 3.6 3.2 2.8 2.4 2.0 2% typ 98% Ω 6.0 RDS (on) 5.5 5.0 4.5 4.0 3.5 3.0 98% 2.5 2.0 1.5 1.0 0.5 0.0 -60 typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C A IF 10 0 10 1 Ciss 10 -1 Coss 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Crss Tj = 150 °C (98%) 10 -1 0.0 10 -2 0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 76 Avalanche energy EAS = ƒ(Tj) parameter: ID = 3 A, VDD = 50 V RGS = 25 Ω, L = 35 mH 190 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 6 A 16 V 160 EAS 140 120 100 80 6 60 4 40 20 0 20 2 0 40 60 80 100 120 °C 160 0 4 8 12 16 20 24 nC 30 VGS 12 10 0,2 VDS max 8 0,8 VDS max Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 76 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96