C67078-A4674-A001

SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives G E Chip Type SIGC25T120C VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package sawn on foil Ordering Code C67078-A4674A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 2 x ( 2.18 x 1.6 ) 1.09 x 0.68 25.9 / 18.7 180 150 270 555 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,