C67078-A4675-A002

SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power module BSM25GD120DLC E3224 Applications: • drives C G E Chip Type SIGC42T120CL SIGC42T120CL VCE 1200V 1200V ICn 25A 25A Die Size 6.59 x 6.49 mm2 6.59 x 6.49 mm2 Package sawn on foil unsawn Ordering Code C67078-A4675A001 C67078-A4675A002 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.59 x 6.49 2 x ( 2.18 x 1.58 ) 1.06 x 0.65 42.8 / 33.5 180 150 90 334 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,