CGY41

CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier  HiRel Discrete and Microwave Semiconductor  Single-stage monolithic microwave IC (MMIC-amplifier )  Application range: 100 MHz to 3 GHz  Gain: 9.5 dB typ. @ 1.8 GHz  Low noise figure: 2.7 dB typ. @ 1.8 GHz  Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V  Input and output matched to 50  Individual current control with neg. gate bias  Hermetically sealed ceramic package micro-x ESD: Electrostatic discharge sensitive device, observe handling precautions! 4 3 1 2 Type Marking Ordering Code Circuit Diagram (Pin Configuration) Package CGY41 (ql) - see below Micro-X (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, Ordering Code: Ordering Code: Ordering Code: on request on request on request (see order instructions for ordering example) IFAG IMM RPD D 1 of 6 Target DATASHEET CGY41 Maximum ratings Drain-voltage Gate-voltage Drain-gate voltage RF Input power 1) Symbol VD VG VDG PRFIN TCh Tstg 2) Value 5.5 -4 ... 0.5 9.5 16 175 -55...+175 440 Unit V V V dBm °C °C mW Channel temperature Storage temperature range Total power dissipation (TS < 82°C) Thermal resistance Channel-soldering point 2) Ptot RthChS 160 K/W Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed RF performance, stable operating conditions and adequate cooling. 1) @ VD > 4.5 V derating required. 2) Ts is measured on the source lead at the soldering point to the PCB. IFAG IMM RPD D 2 of 6 Target DATASHEET CGY41 Electrical Characteristics TA = 25 °C, VG = 0 V, VD = 4.5 V, RS = RL = 50 Ω unless otherwise specified (for application circuit see next page) Characteristics Drain current Symbol IDSS G 9.5 8.5 GF F RLIN RLOUT IP3 31 32 12 12 9.5 dBm 13 12 9.5 dB 2.5 2.7 4.0 dB 0.4 1.1 2 dB 10.5 9.5 13 11 dB min 40 typ 60 max 80 Unit mA Power gain f = 200 MHz f = 1800 MHz Gain flatness f = 200 to 1000 MHz f = 800 to 1800 MHz Noise figure f = 200 to 1000 MHz f = 800 to 1800 MHz Input return loss f = 200 to 1000 MHz f = 800 to 1800 MHz Output return loss f = 200 to 1000 MHz f = 800 to 1800 MHz Third order intercept point Two tone intermodulation test f1 = 806 MHz, f2 = 810 MHz P0 = 10 dBm ( both carriers ) 1dB gain compression f = 200 to 1800 MHz dB P1 dB 18 - dBm IFAG IMM RPD D 3 of 6 Target DATASHEET CGY41 Application Circuit ( f = 800 to 1800 MHz ) V V G C 3 L Input 50Ohm C1 L 1 4 2 2 3 D D L 3 C 1 2 C 4 Output 50Ohm CGY41 50 Ohm Microstripline Legend of components C1 , C2 C3 , C4 L1 L2, L3 D Chip capacitors 100 pF Chip capacitors 1 nF For optimized input matching - discrete inductor: approx. 3nH, or - printed microstripline inductor: Z approx. 100 le approx. 5 mm - discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper wire on nylon rod with M3-thread, or - printed microstripline inductor Z diode 5.6 V ( type BZW 22 C5 V 6 ) IFAG IMM RPD D 4 of 6 Target DATASHEET CGY41 Total Power Dissipation Ptot = f (TS;TA) 500 P tot [ mW ] 400 300 TS TA 200 100 0 0 150 50 100 TA ; TS [ °C ] IFAG IMM RPD D 5 of 6 Target DATASHEET CGY41 Micro-X Package 4 Edition 2011-02 3 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2011 All Rights Reserved. 1 2 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IMM RPD D 6 of 6 Target DATASHEET