ESD8V0L2B-03L

ESD8V0L... Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 (ESD): up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs) • Smallest form factor down to 1.0 x 0.6 x 0.4 mm • Max. working voltage: -8 / +14 V or +8 / -14 V • Very low capacitance down to 2 pF • Very low reverse current < 1 nA typ. • Very low series inductance down to 0.4 nH • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Applications • USB 2.0, 10/100 Ethernet, Firewire, DVI • Mobile communication • Consumer products (STB, MP3, DVD, DSC...) • LCD displays, camera • Notebooks and destop computers, peripherals ESD8V0L1B-02LRH ESD8V0L2B-03L ESD8V0L2B-03LRH D1 1 1 2 3 2 D2 Type ESD8V0L1B-02LRH ESD8V0L2B-03L ESD8V0L2B-03LRH* * Preliminary data Package TSLP-2-17 TSLP-3-1 TSLP-3-7 Configuration 1 channel, bi-directional 2 channels, bi-directional 2 channels, bi-directional Marking B3 B3 on request 1 2009-07-07 ESD8V0L... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol VESD Value Unit ESD contact discharge1) ESD8V0L1B-02LRH ESD8V0L2B..., between all pins Peak pulse current (tp = 8 / 20 µs)2) ESD8V0L1B-02LRH ESD8V0L2B... Operating temperature range Storage temperature 1V 2I kV 25 15 I pp A 2.5 1 T op T stg -55...125 -65...150 °C ESD according to IEC61000-4-2 pp according to IEC61000-4-5 2 2009-07-07 ESD8V0L... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Characteristics Symbol min. Values typ. max. Unit Reverse working voltage Breakdown voltage I(BR) = 1 mA, from pin 2 to 1, ESD8V0L1B-02LRH I(BR) = 1 mA, from pin 1 to 2, ESD8V0L1B-02LRH I(BR) = 1 mA, from pin 1/2 to 3, ESD8V0L2B... I(BR) = 1 mA, from pin 3 to 1/2, ESD8V0L2B... I(BR) = 1 mA, from pin 1 to 2, ESD8V0L2B... VRWM V(BR) -8 14.5 8.5 14.5 8.5 23