FOA11002A1

PRODUCT Semiconductor Solutions for High Speed Communication and Fiber Optic Applications The FOA11002A1 is the industry's lowest power consuming STM64/OC-192 Transimpedance Amplifier for SDH/SONET systems in Silicon Germanium technology. This new device is a key component for future high speed optical communication systems for regional, metropolitan and backbone transport data networks at the highest speeds up to 10.7 Gbit/s over one single fiber. It is a member of the complete 10 Gbit/s chipset in the Silicon Germanium technology. BRIEF Features s s s s s s Typical Applications s s s s s s s Input sensitivity: -18.0 dBm electrical at BER = 10 -12 Transimpedance: 6 k Ω Overload: 0 dBm electrical Single power supply: +5 V Low power consumption: 170 mW Internal DC compensation loop increases dynamic range Internal bias generation for PIN photo diode including low-pass filter Operates with PIN photo diode or APD Monitor output for mirrored photodiode current Fiber optics telecom and datacom applications SONET/SDH OC-192/STM-64 with and without FEC Preamplifier modules Optical receiver modules F OA11002A1 s s s s s Main Advantages s s s s s s Packing Type TIA Sales Code FOA11002A Data rate from 9.95 Gbit to 10.7 Gbit/s up to 10.7 Gbit/s Input sensitivity: - 18.0 dBm at BER = 10-12 Transimpedance: 6 k Ω High overload: 1.5 mA pp maximum input current Single power supply: +5 V Low power consumption: 170 mW Internal DC compensation loop increases dynamic range Package Bare die Internal bias generation for PIN photo diode including low-pass filter Operates with PIN photo diode or APD Monitor output for mirrored photodiode current Few external components necessary Small chip size of 0.97 x 0.97 mm (available as bare die) FOA11002A1 Tra nsi m p e d a n ce A m pl i f i e r T I A 9 .9 5 - 1 0 . 7 G b i t / s , 5 . 0 V Never stop thinking. PRODUCT BRIEF R BIAS FIL CAP FOA11002A1 Block Diagram V CC FOA11002A1 60 Ω 60 Ω V CC GND QH QL DC Compensation IN V REF MONI +5 V 1 kΩ FIL V CC Mirrored Photo Diode Current MONI QH QL 30 nF DataOUT+ 30 nF DataOUT50 Ω GND CAP 560 pF Application Example FO A 110 0 2 A IN 50 Ω Data Processing M UX+CMU FOA41001B1 Laser Driver FOA21002A1 Laser 1) 10 Gbit/s Chipset Overview Framer/ Mapper FOAxxxx One Chip Transceiver FOA6100xB1 DEMUX+CDR FOA51001B1 CDR FOA31002B1 Optional Serial CDR TIA FOA11002A1 PIN 1) How to reach us: http://www.infineon.com Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81541 München © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Ordering No. B168-H7712-G1-X-7600 Printed in Germany PS 1201.5 NB Published by Infineon Technologies AG